JPS59141495A - ガ−ネツト単結晶厚膜育成方法 - Google Patents

ガ−ネツト単結晶厚膜育成方法

Info

Publication number
JPS59141495A
JPS59141495A JP58015662A JP1566283A JPS59141495A JP S59141495 A JPS59141495 A JP S59141495A JP 58015662 A JP58015662 A JP 58015662A JP 1566283 A JP1566283 A JP 1566283A JP S59141495 A JPS59141495 A JP S59141495A
Authority
JP
Japan
Prior art keywords
garnet
film
thick film
single crystal
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58015662A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0415199B2 (enExample
Inventor
Taketoshi Hibiya
孟俊 日比谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58015662A priority Critical patent/JPS59141495A/ja
Publication of JPS59141495A publication Critical patent/JPS59141495A/ja
Publication of JPH0415199B2 publication Critical patent/JPH0415199B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/28Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Magnetic Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58015662A 1983-02-02 1983-02-02 ガ−ネツト単結晶厚膜育成方法 Granted JPS59141495A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58015662A JPS59141495A (ja) 1983-02-02 1983-02-02 ガ−ネツト単結晶厚膜育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58015662A JPS59141495A (ja) 1983-02-02 1983-02-02 ガ−ネツト単結晶厚膜育成方法

Publications (2)

Publication Number Publication Date
JPS59141495A true JPS59141495A (ja) 1984-08-14
JPH0415199B2 JPH0415199B2 (enExample) 1992-03-17

Family

ID=11894949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58015662A Granted JPS59141495A (ja) 1983-02-02 1983-02-02 ガ−ネツト単結晶厚膜育成方法

Country Status (1)

Country Link
JP (1) JPS59141495A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248398A (ja) * 1989-03-20 1990-10-04 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶膜の製造方法
WO2009004791A1 (ja) * 2007-07-03 2009-01-08 Hitachi Metals, Ltd. 単結晶シンチレータ材料およびその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101626517B1 (ko) * 2013-07-30 2016-06-01 (주) 씨엠테크 커피 배전기

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS578800A (en) * 1980-06-20 1982-01-18 Masaharu Mori Production of granular seasoning sugar

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS578800A (en) * 1980-06-20 1982-01-18 Masaharu Mori Production of granular seasoning sugar

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248398A (ja) * 1989-03-20 1990-10-04 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶膜の製造方法
WO2009004791A1 (ja) * 2007-07-03 2009-01-08 Hitachi Metals, Ltd. 単結晶シンチレータ材料およびその製造方法
US8013306B2 (en) 2007-07-03 2011-09-06 Hitachi Metals, Ltd. Single crystal scintillator material and method for producing the same

Also Published As

Publication number Publication date
JPH0415199B2 (enExample) 1992-03-17

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