JPH0415199B2 - - Google Patents

Info

Publication number
JPH0415199B2
JPH0415199B2 JP58015662A JP1566283A JPH0415199B2 JP H0415199 B2 JPH0415199 B2 JP H0415199B2 JP 58015662 A JP58015662 A JP 58015662A JP 1566283 A JP1566283 A JP 1566283A JP H0415199 B2 JPH0415199 B2 JP H0415199B2
Authority
JP
Japan
Prior art keywords
film
garnet
thick
magneto
striae
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58015662A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59141495A (ja
Inventor
Taketoshi Hibya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58015662A priority Critical patent/JPS59141495A/ja
Publication of JPS59141495A publication Critical patent/JPS59141495A/ja
Publication of JPH0415199B2 publication Critical patent/JPH0415199B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
JP58015662A 1983-02-02 1983-02-02 ガ−ネツト単結晶厚膜育成方法 Granted JPS59141495A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58015662A JPS59141495A (ja) 1983-02-02 1983-02-02 ガ−ネツト単結晶厚膜育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58015662A JPS59141495A (ja) 1983-02-02 1983-02-02 ガ−ネツト単結晶厚膜育成方法

Publications (2)

Publication Number Publication Date
JPS59141495A JPS59141495A (ja) 1984-08-14
JPH0415199B2 true JPH0415199B2 (enExample) 1992-03-17

Family

ID=11894949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58015662A Granted JPS59141495A (ja) 1983-02-02 1983-02-02 ガ−ネツト単結晶厚膜育成方法

Country Status (1)

Country Link
JP (1) JPS59141495A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150014728A (ko) * 2013-07-30 2015-02-09 (주) 씨엠테크 커피 배전기

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248398A (ja) * 1989-03-20 1990-10-04 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶膜の製造方法
WO2009004791A1 (ja) * 2007-07-03 2009-01-08 Hitachi Metals, Ltd. 単結晶シンチレータ材料およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS578800A (en) * 1980-06-20 1982-01-18 Masaharu Mori Production of granular seasoning sugar

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150014728A (ko) * 2013-07-30 2015-02-09 (주) 씨엠테크 커피 배전기

Also Published As

Publication number Publication date
JPS59141495A (ja) 1984-08-14

Similar Documents

Publication Publication Date Title
Wolfe et al. Thin‐film garnet materials with zero linear birefringence for magneto‐optic waveguide devices
Wolfe et al. Thin‐film waveguide magneto‐optic isolator
US4671621A (en) Optical systems with antireciprocal polarization rotators
WO2009016972A1 (ja) 光デバイス、光集積デバイス、及びその製造方法
JPH0415199B2 (enExample)
Wolfe et al. Magneto-optic waveguide isolators based on laser annealed (Bi, Ga) YIG films
JPS61113026A (ja) 磁気光学素子用媒体
JPS61292613A (ja) フアラデ−回転子及びその製造方法
JPS63107900A (ja) 磁気光学素子材料
JPH0642026B2 (ja) 磁気光学素子材料
JPS61205698A (ja) 磁気光学材料
Wolfe Thin films for non-reciprocal magneto-optic devices
JPS5957990A (ja) 液相エピタキシヤルガ−ネツト厚膜の育成方法
JPS6278194A (ja) 磁気光学ガ−ネツト単結晶膜とその育成方法
US3485551A (en) Rubidium iron fluoride magneto-optical devices
JPH0769522B2 (ja) 磁気光学アイソレータ装置
JPH111394A (ja) 低飽和ビスマス置換希土類鉄ガーネット単結晶膜
JP2982836B2 (ja) 導波路型アイソレータの製造方法
JPS5854314A (ja) 磁気光学素子
JPS5974526A (ja) 光アイソレ−タおよびその製造方法
JPS6083005A (ja) 光導波路およびその製造法
JP2979434B2 (ja) 磁気光学素子を用いた光アイソレータ
JPH1020247A (ja) 光アイソレータ
JPH04294320A (ja) 磁気光学素子及び光アイソレータ
JPS60145997A (ja) 磁気ガ−ネツト材料の育成法