JPS59139662A - 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線 - Google Patents

半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Info

Publication number
JPS59139662A
JPS59139662A JP58014168A JP1416883A JPS59139662A JP S59139662 A JPS59139662 A JP S59139662A JP 58014168 A JP58014168 A JP 58014168A JP 1416883 A JP1416883 A JP 1416883A JP S59139662 A JPS59139662 A JP S59139662A
Authority
JP
Japan
Prior art keywords
wire
semiconductor device
bonding
alloy
alloy thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58014168A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0211013B2 (enrdf_load_stackoverflow
Inventor
Akira Kiyono
清野　晄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP58014168A priority Critical patent/JPS59139662A/ja
Publication of JPS59139662A publication Critical patent/JPS59139662A/ja
Publication of JPH0211013B2 publication Critical patent/JPH0211013B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01105—Rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
JP58014168A 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線 Granted JPS59139662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58014168A JPS59139662A (ja) 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58014168A JPS59139662A (ja) 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Publications (2)

Publication Number Publication Date
JPS59139662A true JPS59139662A (ja) 1984-08-10
JPH0211013B2 JPH0211013B2 (enrdf_load_stackoverflow) 1990-03-12

Family

ID=11853607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58014168A Granted JPS59139662A (ja) 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Country Status (1)

Country Link
JP (1) JPS59139662A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120693A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6148544A (ja) * 1984-08-16 1986-03-10 Sumitomo Metal Mining Co Ltd 軟化温度の低い高導電用銅合金
JPS6152333A (ja) * 1984-08-21 1986-03-15 Toshiba Corp ボンデイングワイヤ−
JPS6329938A (ja) * 1986-07-23 1988-02-08 Toshiba Corp 半導体装置
JPS643903A (en) * 1987-06-25 1989-01-09 Furukawa Electric Co Ltd Thin copper wire for electronic devices and manufacture thereof
JPH0770675A (ja) * 1994-07-08 1995-03-14 Toshiba Corp 半導体装置
JPH0770674A (ja) * 1994-06-06 1995-03-14 Toshiba Corp 半導体装置
JPH0770673A (ja) * 1994-04-11 1995-03-14 Toshiba Corp 半導体装置
JP2008085320A (ja) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd 半導体装置用銅合金ボンディングワイヤ
JP2008085319A (ja) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd 半導体装置用銅合金ボンディングワイヤ
JP2008182170A (ja) * 2006-12-28 2008-08-07 Hitachi Cable Ltd 太陽電池用はんだめっき線及びその製造方法並びに太陽電池
US8004094B2 (en) 2006-08-31 2011-08-23 Nippon Steel Materials Co., Ltd. Copper alloy bonding wire for semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120693A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6148544A (ja) * 1984-08-16 1986-03-10 Sumitomo Metal Mining Co Ltd 軟化温度の低い高導電用銅合金
JPS6152333A (ja) * 1984-08-21 1986-03-15 Toshiba Corp ボンデイングワイヤ−
JPS6329938A (ja) * 1986-07-23 1988-02-08 Toshiba Corp 半導体装置
JPS643903A (en) * 1987-06-25 1989-01-09 Furukawa Electric Co Ltd Thin copper wire for electronic devices and manufacture thereof
JPH0770673A (ja) * 1994-04-11 1995-03-14 Toshiba Corp 半導体装置
JPH0770674A (ja) * 1994-06-06 1995-03-14 Toshiba Corp 半導体装置
JPH0770675A (ja) * 1994-07-08 1995-03-14 Toshiba Corp 半導体装置
JP2008085320A (ja) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd 半導体装置用銅合金ボンディングワイヤ
JP2008085319A (ja) * 2006-08-31 2008-04-10 Nippon Steel Materials Co Ltd 半導体装置用銅合金ボンディングワイヤ
US8004094B2 (en) 2006-08-31 2011-08-23 Nippon Steel Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
US8610291B2 (en) 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
JP2008182170A (ja) * 2006-12-28 2008-08-07 Hitachi Cable Ltd 太陽電池用はんだめっき線及びその製造方法並びに太陽電池

Also Published As

Publication number Publication date
JPH0211013B2 (enrdf_load_stackoverflow) 1990-03-12

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