JPS59136742A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59136742A
JPS59136742A JP1030283A JP1030283A JPS59136742A JP S59136742 A JPS59136742 A JP S59136742A JP 1030283 A JP1030283 A JP 1030283A JP 1030283 A JP1030283 A JP 1030283A JP S59136742 A JPS59136742 A JP S59136742A
Authority
JP
Japan
Prior art keywords
film
substrate
carbon
amorphous
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1030283A
Other languages
English (en)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP1030283A priority Critical patent/JPS59136742A/ja
Publication of JPS59136742A publication Critical patent/JPS59136742A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体装置に係シ、とシわけ、Ｓｉ膜ｆＡｌ基
体に形成する感光ドラム、太陽電池、センサー、等の薄
膜半導体装置に関する。
従来、ｓ７薄膜半導体装置による感光ドラムはＡｔある
いはＡｊ金合金ドラム基体表面にアモルファスｓｉ＃ア
モルファスＳｉＣ膜、アモルファスＢ１Ｇｅ膜等を蒸着
して形成していた。
しかし、上記従来技術によると、アモルファスｓフ膜等
に基体ＡＩ原子がドラムあるいは太陽電池に光を尚てる
と拡散し、アモルファスＳＺ膜等の抵抗値を下げるため
、感光特性が劣化するという欠点があった。
本発明は、かかる従来技術の欠点をなくシ、かかる感光
特性等の特性劣化のない薄膜半導体装置を提供すること
を目的とする。
上記目的を達成するための本発明の基本的な構成は、半
導体装置において、Ａｌを基体とし、該基体表面に炭素
膜を形成し、該炭素展ｊ上にＥｉ％を形成することを特
徴とする。
以下、実施例により本発明を詳述する。
第１図は従来の感光ドラムの材料構成を示す。
すなわち、Ａｌ基体１の表面に、アモルファスＳｉ２が
ｌ（１μ情程度形成されていた。
第２図は本発明による感光ドラムの材料構成を示す。す
なわち、Ａｌ基体１１の表面に、炭素膜１２が１μｍ〜
５μｍ程度形成さ九、該炭素膜１２の表面にアモルファ
スＳＺ膜１３が１０μｍ程度形成される。
上記の如く、本発明によるＡｔ−Ｃ（炭素）−８ｉ構造
では、−Ｃ（炭素）膜が光照射時のＡｔ基体からのＡｌ
原子の拡散阻止能を有し、Ｓｉ膜へのＡｌ原子の侵入を
防止し、ＳＺ膜の感光特性等の特性劣化を起すことがな
いという効果がある。
本発明は、Ａｔ基体表面に直接炭素膜を鍼する場合のみ
ならず、Ａｌ基体表面にＳａＣ等の表面処理膜を形成後
、炭素膜を形成し、該炭素膜上にアモルファスｓ７等の
半導体膜を形成しても良い。
【図面の簡単な説明】
第１図は従来技術による感光ドラムの材料構成を示し、
第２図は本発明による感光ドラムの材料構成を示す。 １、ｌ】・・Ａｌ基体　ｚ、ｉ３・・アモルファスｓ７
膜　１２・・炭素膜。 以　　　上 出願人　株式会社諏訪精工舎 代理人　弁理士最　上　　務 第１図 第２図

Claims (1)

    【特許請求の範囲】
  1. アルミニウム（Ａｌ）を基体とし、該基体表面に炭素膜
    を形成し、該炭素膜上にシリコン（Ｓｉ）膜を形成する
    ことを特徴とする半導体装置。
JP1030283A 1983-01-25 1983-01-25 半導体装置 Pending JPS59136742A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1030283A JPS59136742A (ja) 1983-01-25 1983-01-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1030283A JPS59136742A (ja) 1983-01-25 1983-01-25 半導体装置

Publications (1)

Publication Number Publication Date
JPS59136742A true JPS59136742A (ja) 1984-08-06

Family

ID=11746458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1030283A Pending JPS59136742A (ja) 1983-01-25 1983-01-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS59136742A (ja)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148965A (ja) * 1985-09-19 1987-07-02 Minolta Camera Co Ltd 感光体
JPS62148962A (ja) * 1985-09-13 1987-07-02 Minolta Camera Co Ltd 感光体
US4738912A (en) * 1985-09-13 1988-04-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon transport layer
US4741982A (en) * 1985-09-13 1988-05-03 Minolta Camera Kabushiki Kaisha Photosensitive member having undercoat layer of amorphous carbon
US4743522A (en) * 1985-09-13 1988-05-10 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
JPS63197956A (ja) * 1987-02-10 1988-08-16 Fujitsu Ltd 電子写真感光体
US4797338A (en) * 1986-09-16 1989-01-10 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4810606A (en) * 1986-07-07 1989-03-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4851313A (en) * 1986-06-10 1989-07-25 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same
US4863821A (en) * 1986-07-07 1989-09-05 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer having amorphous carbon
US4868076A (en) * 1986-09-26 1989-09-19 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4871632A (en) * 1986-09-26 1989-10-03 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4882256A (en) * 1986-10-14 1989-11-21 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer comprising amorphous carbon
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer
US5166018A (en) * 1985-09-13 1992-11-24 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148962A (ja) * 1985-09-13 1987-07-02 Minolta Camera Co Ltd 感光体
US4738912A (en) * 1985-09-13 1988-04-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon transport layer
US4741982A (en) * 1985-09-13 1988-05-03 Minolta Camera Kabushiki Kaisha Photosensitive member having undercoat layer of amorphous carbon
US4743522A (en) * 1985-09-13 1988-05-10 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US5166018A (en) * 1985-09-13 1992-11-24 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
JPS62148965A (ja) * 1985-09-19 1987-07-02 Minolta Camera Co Ltd 感光体
US4851313A (en) * 1986-06-10 1989-07-25 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same
US4863821A (en) * 1986-07-07 1989-09-05 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer having amorphous carbon
US4810606A (en) * 1986-07-07 1989-03-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4797338A (en) * 1986-09-16 1989-01-10 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4868076A (en) * 1986-09-26 1989-09-19 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4871632A (en) * 1986-09-26 1989-10-03 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4882256A (en) * 1986-10-14 1989-11-21 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer comprising amorphous carbon
JPS63197956A (ja) * 1987-02-10 1988-08-16 Fujitsu Ltd 電子写真感光体
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer

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