JPS59132493A - 半導体記憶装置における初期値設定回路 - Google Patents
半導体記憶装置における初期値設定回路Info
- Publication number
- JPS59132493A JPS59132493A JP58005910A JP591083A JPS59132493A JP S59132493 A JPS59132493 A JP S59132493A JP 58005910 A JP58005910 A JP 58005910A JP 591083 A JP591083 A JP 591083A JP S59132493 A JPS59132493 A JP S59132493A
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- signal
- data line
- circuit
- cell array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005910A JPS59132493A (ja) | 1983-01-19 | 1983-01-19 | 半導体記憶装置における初期値設定回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005910A JPS59132493A (ja) | 1983-01-19 | 1983-01-19 | 半導体記憶装置における初期値設定回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59132493A true JPS59132493A (ja) | 1984-07-30 |
| JPH0551993B2 JPH0551993B2 (enrdf_load_stackoverflow) | 1993-08-04 |
Family
ID=11624049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58005910A Granted JPS59132493A (ja) | 1983-01-19 | 1983-01-19 | 半導体記憶装置における初期値設定回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59132493A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62273696A (ja) * | 1986-05-21 | 1987-11-27 | Hitachi Ltd | 半導体メモリ |
| JPS63149899A (ja) * | 1986-12-15 | 1988-06-22 | Toshiba Corp | 半導体メモリ |
| JPH01165087A (ja) * | 1987-08-26 | 1989-06-29 | Texas Instr Inc <Ti> | 記憶装置 |
-
1983
- 1983-01-19 JP JP58005910A patent/JPS59132493A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62273696A (ja) * | 1986-05-21 | 1987-11-27 | Hitachi Ltd | 半導体メモリ |
| JPS63149899A (ja) * | 1986-12-15 | 1988-06-22 | Toshiba Corp | 半導体メモリ |
| JPH01165087A (ja) * | 1987-08-26 | 1989-06-29 | Texas Instr Inc <Ti> | 記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0551993B2 (enrdf_load_stackoverflow) | 1993-08-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0177776B1 (ko) | 고집적 반도체 메모리 장치의 데이타 센싱회로 | |
| US4010453A (en) | Stored charge differential sense amplifier | |
| KR950014559B1 (ko) | 반도체 기억장치 | |
| US4606010A (en) | Dynamic memory device | |
| KR100743002B1 (ko) | 반도체 장치 | |
| KR910009442B1 (ko) | 반도체 기억장치 | |
| JPH0664907B2 (ja) | ダイナミツク型ram | |
| JP3183331B2 (ja) | ダイナミック型半導体記憶装置 | |
| US5475642A (en) | Dynamic random access memory with bit line preamp/driver | |
| JPH11149785A (ja) | 半導体記憶装置及びそのデータ読み出し方法 | |
| JPH08147965A (ja) | 半導体記憶装置 | |
| JP2004531019A (ja) | 集積回路メモリ | |
| JPH0480479B2 (enrdf_load_stackoverflow) | ||
| JP2003303491A (ja) | 半導体記憶装置 | |
| US4769792A (en) | Semiconductor memory device with voltage bootstrap | |
| KR950006962B1 (ko) | 반도체 기억 장치 | |
| JPH0584596B2 (enrdf_load_stackoverflow) | ||
| US6504766B1 (en) | System and method for early write to memory by injecting small voltage signal | |
| US6570799B1 (en) | Precharge and reference voltage technique for dynamic random access memories | |
| JP2980368B2 (ja) | ダイナミック型半導体記憶装置 | |
| JPS59132493A (ja) | 半導体記憶装置における初期値設定回路 | |
| JP2000048576A (ja) | 半導体集積回路装置 | |
| JP3274728B2 (ja) | 半導体集積回路装置 | |
| JPH041434B2 (enrdf_load_stackoverflow) | ||
| JPH04353693A (ja) | 半導体記憶装置 |