JPS59131593A - 化合物半導体単結晶の製造装置 - Google Patents
化合物半導体単結晶の製造装置Info
- Publication number
- JPS59131593A JPS59131593A JP518283A JP518283A JPS59131593A JP S59131593 A JPS59131593 A JP S59131593A JP 518283 A JP518283 A JP 518283A JP 518283 A JP518283 A JP 518283A JP S59131593 A JPS59131593 A JP S59131593A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- reinforcing member
- single crystal
- magnetic field
- heating furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 45
- 150000001875 compounds Chemical class 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000002994 raw material Substances 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 239000007788 liquid Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP518283A JPS59131593A (ja) | 1983-01-18 | 1983-01-18 | 化合物半導体単結晶の製造装置 |
| US06/571,194 US4606037A (en) | 1983-01-18 | 1984-01-16 | Apparatus for manufacturing semiconductor single crystal |
| GB08401195A GB2136310B (en) | 1983-01-18 | 1984-01-17 | Apparatus for manufacturing semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP518283A JPS59131593A (ja) | 1983-01-18 | 1983-01-18 | 化合物半導体単結晶の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59131593A true JPS59131593A (ja) | 1984-07-28 |
| JPH0360798B2 JPH0360798B2 (enrdf_load_stackoverflow) | 1991-09-17 |
Family
ID=11604088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP518283A Granted JPS59131593A (ja) | 1983-01-18 | 1983-01-18 | 化合物半導体単結晶の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59131593A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6479099A (en) * | 1987-09-21 | 1989-03-24 | Semiconductor Energy Lab | Production of superconductive material |
| US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56104791A (en) * | 1980-01-28 | 1981-08-20 | Sony Corp | Growth of crystal |
-
1983
- 1983-01-18 JP JP518283A patent/JPS59131593A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56104791A (en) * | 1980-01-28 | 1981-08-20 | Sony Corp | Growth of crystal |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6479099A (en) * | 1987-09-21 | 1989-03-24 | Semiconductor Energy Lab | Production of superconductive material |
| US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0360798B2 (enrdf_load_stackoverflow) | 1991-09-17 |
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