JPH0360798B2 - - Google Patents

Info

Publication number
JPH0360798B2
JPH0360798B2 JP58005182A JP518283A JPH0360798B2 JP H0360798 B2 JPH0360798 B2 JP H0360798B2 JP 58005182 A JP58005182 A JP 58005182A JP 518283 A JP518283 A JP 518283A JP H0360798 B2 JPH0360798 B2 JP H0360798B2
Authority
JP
Japan
Prior art keywords
crystal
heater member
crucible
magnetic field
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58005182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59131593A (ja
Inventor
Kazutaka Terajima
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP518283A priority Critical patent/JPS59131593A/ja
Priority to US06/571,194 priority patent/US4606037A/en
Priority to GB08401195A priority patent/GB2136310B/en
Publication of JPS59131593A publication Critical patent/JPS59131593A/ja
Publication of JPH0360798B2 publication Critical patent/JPH0360798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP518283A 1983-01-18 1983-01-18 化合物半導体単結晶の製造装置 Granted JPS59131593A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP518283A JPS59131593A (ja) 1983-01-18 1983-01-18 化合物半導体単結晶の製造装置
US06/571,194 US4606037A (en) 1983-01-18 1984-01-16 Apparatus for manufacturing semiconductor single crystal
GB08401195A GB2136310B (en) 1983-01-18 1984-01-17 Apparatus for manufacturing semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP518283A JPS59131593A (ja) 1983-01-18 1983-01-18 化合物半導体単結晶の製造装置

Publications (2)

Publication Number Publication Date
JPS59131593A JPS59131593A (ja) 1984-07-28
JPH0360798B2 true JPH0360798B2 (enrdf_load_stackoverflow) 1991-09-17

Family

ID=11604088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP518283A Granted JPS59131593A (ja) 1983-01-18 1983-01-18 化合物半導体単結晶の製造装置

Country Status (1)

Country Link
JP (1) JPS59131593A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
US5186784A (en) * 1989-06-20 1993-02-16 Texas Instruments Incorporated Process for improved doping of semiconductor crystals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850953B2 (ja) * 1980-01-28 1983-11-14 ソニー株式会社 結晶成長法

Also Published As

Publication number Publication date
JPS59131593A (ja) 1984-07-28

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