JPS59131510A - アモルフアスシリコン膜の成膜方法 - Google Patents

アモルフアスシリコン膜の成膜方法

Info

Publication number
JPS59131510A
JPS59131510A JP58004268A JP426883A JPS59131510A JP S59131510 A JPS59131510 A JP S59131510A JP 58004268 A JP58004268 A JP 58004268A JP 426883 A JP426883 A JP 426883A JP S59131510 A JPS59131510 A JP S59131510A
Authority
JP
Japan
Prior art keywords
gas
amorphous silicon
reaction vessel
substrates
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58004268A
Other languages
English (en)
Japanese (ja)
Other versions
JPH034623B2 (enExample
Inventor
Zenko Hirose
全孝 廣瀬
Takeshi Ueno
毅 上野
Katsumi Suzuki
克巳 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58004268A priority Critical patent/JPS59131510A/ja
Publication of JPS59131510A publication Critical patent/JPS59131510A/ja
Publication of JPH034623B2 publication Critical patent/JPH034623B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP58004268A 1983-01-17 1983-01-17 アモルフアスシリコン膜の成膜方法 Granted JPS59131510A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58004268A JPS59131510A (ja) 1983-01-17 1983-01-17 アモルフアスシリコン膜の成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58004268A JPS59131510A (ja) 1983-01-17 1983-01-17 アモルフアスシリコン膜の成膜方法

Publications (2)

Publication Number Publication Date
JPS59131510A true JPS59131510A (ja) 1984-07-28
JPH034623B2 JPH034623B2 (enExample) 1991-01-23

Family

ID=11579790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58004268A Granted JPS59131510A (ja) 1983-01-17 1983-01-17 アモルフアスシリコン膜の成膜方法

Country Status (1)

Country Link
JP (1) JPS59131510A (enExample)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57185971A (en) * 1981-05-11 1982-11-16 Oki Electric Ind Co Ltd Formation of glow discharge film
JPS58132754A (ja) * 1982-02-03 1983-08-08 Toshiba Corp アモルフアス・シリコン感光体製造方法及びその製造装置
JPS5970766A (ja) * 1982-10-18 1984-04-21 Ulvac Corp プラズマｃｖｄ装置
JPS5970762A (ja) * 1982-10-14 1984-04-21 Ulvac Corp プラズマｃｖｄ装置
JPS5970764A (ja) * 1982-10-15 1984-04-21 Ulvac Corp プラズマｃｖｄ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57185971A (en) * 1981-05-11 1982-11-16 Oki Electric Ind Co Ltd Formation of glow discharge film
JPS58132754A (ja) * 1982-02-03 1983-08-08 Toshiba Corp アモルフアス・シリコン感光体製造方法及びその製造装置
JPS5970762A (ja) * 1982-10-14 1984-04-21 Ulvac Corp プラズマｃｖｄ装置
JPS5970764A (ja) * 1982-10-15 1984-04-21 Ulvac Corp プラズマｃｖｄ装置
JPS5970766A (ja) * 1982-10-18 1984-04-21 Ulvac Corp プラズマｃｖｄ装置

Also Published As

Publication number Publication date
JPH034623B2 (enExample) 1991-01-23

Similar Documents

Publication Publication Date Title
US6755151B2 (en) Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
US5288329A (en) Chemical vapor deposition apparatus of in-line type
US8613984B2 (en) Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels
GB2150600A (en) Improvements in or relating to coating apparatus
FR2526813A1 (fr) Appareil et procede de production en grande serie de pellicules par deposition sous vide
JPH0456448B2 (enExample)
EP0661761A2 (en) Method of manufacturing photoelectric transducer
JPS58169980A (ja) 光起電力素子の製造方法
JPH07230960A (ja) プラズマｃｖｄ装置
US6443191B1 (en) Vacuum processing methods
US4834023A (en) Apparatus for forming deposited film
JP3630831B2 (ja) 堆積膜の形成方法
TWI420683B (zh) 薄膜太陽能電池製造裝置
JPS59131510A (ja) アモルフアスシリコン膜の成膜方法
TWI407573B (zh) 薄膜太陽能電池製造裝置
US5718769A (en) Plasma processing apparatus
JPS6357503B2 (enExample)
JPH08195348A (ja) 半導体装置製造装置
JPS59131511A (ja) アモルフアスシリコン膜の成膜方法
JPS61196526A (ja) 光化学的気相成長方法及びその装置
JPS6064426A (ja) 気相反応薄膜形成方法および装置
JPS63258016A (ja) 非晶質薄膜の作製方法
JPH09162131A (ja) プラズマｃｖｄ装置
JPS61279116A (ja) 薄膜形成装置
JP3624025B2 (ja) 光起電力素子の形成方法