JPS59130478A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS59130478A
JPS59130478A JP58005693A JP569383A JPS59130478A JP S59130478 A JPS59130478 A JP S59130478A JP 58005693 A JP58005693 A JP 58005693A JP 569383 A JP569383 A JP 569383A JP S59130478 A JPS59130478 A JP S59130478A
Authority
JP
Japan
Prior art keywords
electrodes
electrode
monitor element
gaas
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58005693A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0436458B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Michi Kozuka
古塚　岐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58005693A priority Critical patent/JPS59130478A/ja
Publication of JPS59130478A publication Critical patent/JPS59130478A/ja
Publication of JPH0436458B2 publication Critical patent/JPH0436458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58005693A 1983-01-17 1983-01-17 電界効果トランジスタの製造方法 Granted JPS59130478A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58005693A JPS59130478A (ja) 1983-01-17 1983-01-17 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58005693A JPS59130478A (ja) 1983-01-17 1983-01-17 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59130478A true JPS59130478A (ja) 1984-07-27
JPH0436458B2 JPH0436458B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-06-16

Family

ID=11618177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58005693A Granted JPS59130478A (ja) 1983-01-17 1983-01-17 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59130478A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165641A (ja) * 1988-12-20 1990-06-26 Sanyo Electric Co Ltd 電界効果トランジスタの製造方法
JPH06177170A (ja) * 1992-12-09 1994-06-24 Nec Corp 半導体装置
EP0690506A1 (fr) * 1994-06-29 1996-01-03 Laboratoires D'electronique Philips Procédé de réalisation d'un dispositif semiconducteur comprenant au moins deux transistors à effet de champ ayant des tensions de pincement différentes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165641A (ja) * 1988-12-20 1990-06-26 Sanyo Electric Co Ltd 電界効果トランジスタの製造方法
JPH06177170A (ja) * 1992-12-09 1994-06-24 Nec Corp 半導体装置
EP0690506A1 (fr) * 1994-06-29 1996-01-03 Laboratoires D'electronique Philips Procédé de réalisation d'un dispositif semiconducteur comprenant au moins deux transistors à effet de champ ayant des tensions de pincement différentes

Also Published As

Publication number Publication date
JPH0436458B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-06-16

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