JPH0436458B2 - - Google Patents

Info

Publication number
JPH0436458B2
JPH0436458B2 JP58005693A JP569383A JPH0436458B2 JP H0436458 B2 JPH0436458 B2 JP H0436458B2 JP 58005693 A JP58005693 A JP 58005693A JP 569383 A JP569383 A JP 569383A JP H0436458 B2 JPH0436458 B2 JP H0436458B2
Authority
JP
Japan
Prior art keywords
electrodes
monitor element
active layer
field effect
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58005693A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59130478A (ja
Inventor
Michi Kozuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58005693A priority Critical patent/JPS59130478A/ja
Publication of JPS59130478A publication Critical patent/JPS59130478A/ja
Publication of JPH0436458B2 publication Critical patent/JPH0436458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
JP58005693A 1983-01-17 1983-01-17 電界効果トランジスタの製造方法 Granted JPS59130478A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58005693A JPS59130478A (ja) 1983-01-17 1983-01-17 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58005693A JPS59130478A (ja) 1983-01-17 1983-01-17 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59130478A JPS59130478A (ja) 1984-07-27
JPH0436458B2 true JPH0436458B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-06-16

Family

ID=11618177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58005693A Granted JPS59130478A (ja) 1983-01-17 1983-01-17 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59130478A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165641A (ja) * 1988-12-20 1990-06-26 Sanyo Electric Co Ltd 電界効果トランジスタの製造方法
JPH0812930B2 (ja) * 1992-12-09 1996-02-07 日本電気株式会社 半導体装置
EP0690506B1 (fr) * 1994-06-29 1999-09-08 Laboratoires D'electronique Philips S.A.S. Procédé de réalisation d'un dispositif semiconducteur comprenant au moins deux transistors à effet de champ ayant des tensions de pincement différentes

Also Published As

Publication number Publication date
JPS59130478A (ja) 1984-07-27

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