JPS59129987A - 半導体メモリ - Google Patents
半導体メモリInfo
- Publication number
- JPS59129987A JPS59129987A JP58004324A JP432483A JPS59129987A JP S59129987 A JPS59129987 A JP S59129987A JP 58004324 A JP58004324 A JP 58004324A JP 432483 A JP432483 A JP 432483A JP S59129987 A JPS59129987 A JP S59129987A
- Authority
- JP
- Japan
- Prior art keywords
- refresh
- address
- input
- clock
- address counter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 230000006870 function Effects 0.000 claims description 12
- 238000012790 confirmation Methods 0.000 abstract description 3
- 230000000415 inactivating effect Effects 0.000 abstract 1
- 101150076031 RAS1 gene Proteins 0.000 description 13
- 230000004044 response Effects 0.000 description 11
- 230000004913 activation Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000003213 activating effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 102100038920 Alpha-S1-casein Human genes 0.000 description 2
- 101000741048 Homo sapiens Alpha-S1-casein Proteins 0.000 description 2
- 102100033868 Cannabinoid receptor 1 Human genes 0.000 description 1
- 101710187010 Cannabinoid receptor 1 Proteins 0.000 description 1
- 101001130509 Homo sapiens Ras GTPase-activating protein 1 Proteins 0.000 description 1
- 102100031426 Ras GTPase-activating protein 1 Human genes 0.000 description 1
- 101150045048 Ras85D gene Proteins 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58004324A JPS59129987A (ja) | 1983-01-14 | 1983-01-14 | 半導体メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58004324A JPS59129987A (ja) | 1983-01-14 | 1983-01-14 | 半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59129987A true JPS59129987A (ja) | 1984-07-26 |
JPH0325871B2 JPH0325871B2 (enrdf_load_stackoverflow) | 1991-04-09 |
Family
ID=11581267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58004324A Granted JPS59129987A (ja) | 1983-01-14 | 1983-01-14 | 半導体メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59129987A (enrdf_load_stackoverflow) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61122997A (ja) * | 1984-08-31 | 1986-06-10 | テキサス インスツルメンツ インコ−ポレイテツド | リフレツシユ アドレスカウンタ |
JPS61126687A (ja) * | 1984-11-22 | 1986-06-14 | Hitachi Ltd | ダイナミツク型ram |
JPS629591A (ja) * | 1985-07-08 | 1987-01-17 | Nec Corp | Mosダイナミツクram |
JPS6391897A (ja) * | 1986-10-06 | 1988-04-22 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS6413292A (en) * | 1987-07-07 | 1989-01-18 | Matsushita Electronics Corp | Dynamic type storage device |
JP2010186530A (ja) * | 2009-01-14 | 2010-08-26 | Elpida Memory Inc | 半導体記憶装置、メモリシステム、及び半導体記憶装置のリフレッシュ制御方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55150192A (en) * | 1979-05-08 | 1980-11-21 | Nec Corp | Memory unit |
-
1983
- 1983-01-14 JP JP58004324A patent/JPS59129987A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55150192A (en) * | 1979-05-08 | 1980-11-21 | Nec Corp | Memory unit |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61122997A (ja) * | 1984-08-31 | 1986-06-10 | テキサス インスツルメンツ インコ−ポレイテツド | リフレツシユ アドレスカウンタ |
JPS61126687A (ja) * | 1984-11-22 | 1986-06-14 | Hitachi Ltd | ダイナミツク型ram |
JPS629591A (ja) * | 1985-07-08 | 1987-01-17 | Nec Corp | Mosダイナミツクram |
JPS6391897A (ja) * | 1986-10-06 | 1988-04-22 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS6413292A (en) * | 1987-07-07 | 1989-01-18 | Matsushita Electronics Corp | Dynamic type storage device |
JP2010186530A (ja) * | 2009-01-14 | 2010-08-26 | Elpida Memory Inc | 半導体記憶装置、メモリシステム、及び半導体記憶装置のリフレッシュ制御方法 |
US8576652B2 (en) | 2009-01-14 | 2013-11-05 | Elpida Memory, Inc. | Semiconductor memory device, memory system including memory controller, and refresh control method for a semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
JPH0325871B2 (enrdf_load_stackoverflow) | 1991-04-09 |
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