JPS6413292A - Dynamic type storage device - Google Patents

Dynamic type storage device

Info

Publication number
JPS6413292A
JPS6413292A JP62169038A JP16903887A JPS6413292A JP S6413292 A JPS6413292 A JP S6413292A JP 62169038 A JP62169038 A JP 62169038A JP 16903887 A JP16903887 A JP 16903887A JP S6413292 A JPS6413292 A JP S6413292A
Authority
JP
Japan
Prior art keywords
signal
circuit
ras
sref
inverse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62169038A
Other languages
Japanese (ja)
Other versions
JPH061634B2 (en
Inventor
Masaya Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62169038A priority Critical patent/JPH061634B2/en
Publication of JPS6413292A publication Critical patent/JPS6413292A/en
Publication of JPH061634B2 publication Critical patent/JPH061634B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Dram (AREA)

Abstract

PURPOSE:To enable an efficient and general useful SREF function to be loaded by executing self-refreshment (SREF) with the phase timing and the voltage of an inversion RAS and an inversion CAS input signal. CONSTITUTION:By making the inverse CAS input signal 2 to be L and making the inverse of RAS input signal to be L after delay time (tD), a basic clock phiOSC11 asynchronously generating an RAS signal inside is generated by the SREF control circuit 3 when the circuit 3 receives a self-refreshment demand and starts an oscillation circuit 4 and the signal phiOSCD12 of a cycle T is generated through a frequency devider circuit 5. The signal phiOSCD12 is wave-formed by a control circuit 7 for generating an internal RAS. Then a pulse width is optimized and an inversion RASI14 is generated. After receiving the SREF operation demand based on the phase and the voltage conditions of the inverse RAS and the inverse of CAS signal, the circuit 5 receives the signal of T/2, inputs it to an external RAS circuit control circuit 6, resets the output signal inverse RASO13 of the circuit 6, executes latch and controls an internal RAS signal to repeatedly execute REF operation. A signal IntRAS15 starts an internal address counter control circuit 8 and executes the SREF through an internal address counter circuit 9.
JP62169038A 1987-07-07 1987-07-07 Dynamic storage Expired - Lifetime JPH061634B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62169038A JPH061634B2 (en) 1987-07-07 1987-07-07 Dynamic storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62169038A JPH061634B2 (en) 1987-07-07 1987-07-07 Dynamic storage

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4015990A Division JP2563715B2 (en) 1992-01-31 1992-01-31 Dynamic storage

Publications (2)

Publication Number Publication Date
JPS6413292A true JPS6413292A (en) 1989-01-18
JPH061634B2 JPH061634B2 (en) 1994-01-05

Family

ID=15879162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62169038A Expired - Lifetime JPH061634B2 (en) 1987-07-07 1987-07-07 Dynamic storage

Country Status (1)

Country Link
JP (1) JPH061634B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023151A (en) * 1988-06-16 1990-01-08 Fujitsu Ltd Dynamic random access memory device
US5554953A (en) * 1992-10-07 1996-09-10 Matsushita Electric Industrial Co., Ltd. Internal reduced-voltage generator for semiconductor integrated circuit
US5828619A (en) * 1995-04-18 1998-10-27 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
US6122214A (en) * 1998-03-23 2000-09-19 Matsushita Electric Industrial Co., Ltd. Semiconductor memory

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129987A (en) * 1983-01-14 1984-07-26 Nec Corp Semiconductor memory
JPS629591A (en) * 1985-07-08 1987-01-17 Nec Corp Mos dynamic ram
JPS6212991A (en) * 1985-07-10 1987-01-21 Fujitsu Ltd Semiconductor memory device
JPS63106991A (en) * 1986-10-24 1988-05-12 Nec Corp Memory integrated circuit
JPS63106992A (en) * 1986-10-24 1988-05-12 Nec Corp Memory integrated circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129987A (en) * 1983-01-14 1984-07-26 Nec Corp Semiconductor memory
JPS629591A (en) * 1985-07-08 1987-01-17 Nec Corp Mos dynamic ram
JPS6212991A (en) * 1985-07-10 1987-01-21 Fujitsu Ltd Semiconductor memory device
JPS63106991A (en) * 1986-10-24 1988-05-12 Nec Corp Memory integrated circuit
JPS63106992A (en) * 1986-10-24 1988-05-12 Nec Corp Memory integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023151A (en) * 1988-06-16 1990-01-08 Fujitsu Ltd Dynamic random access memory device
US5554953A (en) * 1992-10-07 1996-09-10 Matsushita Electric Industrial Co., Ltd. Internal reduced-voltage generator for semiconductor integrated circuit
US5828619A (en) * 1995-04-18 1998-10-27 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
US6122214A (en) * 1998-03-23 2000-09-19 Matsushita Electric Industrial Co., Ltd. Semiconductor memory

Also Published As

Publication number Publication date
JPH061634B2 (en) 1994-01-05

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