JPS59124768A - 不揮発性半導体記憶装置の製造方法 - Google Patents
不揮発性半導体記憶装置の製造方法Info
- Publication number
- JPS59124768A JPS59124768A JP57233790A JP23379082A JPS59124768A JP S59124768 A JPS59124768 A JP S59124768A JP 57233790 A JP57233790 A JP 57233790A JP 23379082 A JP23379082 A JP 23379082A JP S59124768 A JPS59124768 A JP S59124768A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- tantalum oxide
- silicon
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000012212 insulator Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 27
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 17
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 12
- 239000000377 silicon dioxide Substances 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 230000006870 function Effects 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 91
- 230000005684 electric field Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000001066 destructive effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- FSLGCYNKXXIWGJ-UHFFFAOYSA-N silicon(1+) Chemical compound [Si+] FSLGCYNKXXIWGJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57233790A JPS59124768A (ja) | 1982-12-29 | 1982-12-29 | 不揮発性半導体記憶装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57233790A JPS59124768A (ja) | 1982-12-29 | 1982-12-29 | 不揮発性半導体記憶装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59124768A true JPS59124768A (ja) | 1984-07-18 |
| JPH0450754B2 JPH0450754B2 (fr) | 1992-08-17 |
Family
ID=16960603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57233790A Granted JPS59124768A (ja) | 1982-12-29 | 1982-12-29 | 不揮発性半導体記憶装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59124768A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229595A (en) * | 1991-12-19 | 1993-07-20 | Xerox Corporation | Fluid-filled color filtered input scanner arrays |
| US5698883A (en) * | 1989-10-09 | 1997-12-16 | Kabushiki Kaisha Toshiba | MOS field effect transistor and method for manufacturing the same |
| JP2009117874A (ja) * | 2001-06-28 | 2009-05-28 | Samsung Electronics Co Ltd | 浮遊トラップ型不揮発性メモリ素子 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7144905B1 (ja) * | 2021-11-29 | 2022-09-30 | 三菱電機株式会社 | 揚程延長式工事用エレベーター |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840668A (fr) * | 1971-09-28 | 1973-06-14 | ||
| JPS4979692A (fr) * | 1972-12-07 | 1974-08-01 | ||
| JPS49116982A (fr) * | 1973-12-14 | 1974-11-08 |
-
1982
- 1982-12-29 JP JP57233790A patent/JPS59124768A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840668A (fr) * | 1971-09-28 | 1973-06-14 | ||
| JPS4979692A (fr) * | 1972-12-07 | 1974-08-01 | ||
| JPS49116982A (fr) * | 1973-12-14 | 1974-11-08 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698883A (en) * | 1989-10-09 | 1997-12-16 | Kabushiki Kaisha Toshiba | MOS field effect transistor and method for manufacturing the same |
| US5229595A (en) * | 1991-12-19 | 1993-07-20 | Xerox Corporation | Fluid-filled color filtered input scanner arrays |
| JP2009117874A (ja) * | 2001-06-28 | 2009-05-28 | Samsung Electronics Co Ltd | 浮遊トラップ型不揮発性メモリ素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0450754B2 (fr) | 1992-08-17 |
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