JPS59121864A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS59121864A JPS59121864A JP57232323A JP23232382A JPS59121864A JP S59121864 A JPS59121864 A JP S59121864A JP 57232323 A JP57232323 A JP 57232323A JP 23232382 A JP23232382 A JP 23232382A JP S59121864 A JPS59121864 A JP S59121864A
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity
- type
- same
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000012535 impurity Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57232323A JPS59121864A (ja) | 1982-12-27 | 1982-12-27 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57232323A JPS59121864A (ja) | 1982-12-27 | 1982-12-27 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59121864A true JPS59121864A (ja) | 1984-07-14 |
| JPH05864B2 JPH05864B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-01-06 |
Family
ID=16937394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57232323A Granted JPS59121864A (ja) | 1982-12-27 | 1982-12-27 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121864A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS628552A (ja) * | 1985-07-04 | 1987-01-16 | Toshiba Corp | 半導体装置 |
| US5962913A (en) * | 1996-01-19 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Bipolar transistor having a particular contact structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0776960A (ja) * | 1993-09-09 | 1995-03-20 | Sankyo Alum Ind Co Ltd | スクリーン体の防音方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370677A (en) * | 1976-12-06 | 1978-06-23 | Fujitsu Ltd | Semiconductor device |
-
1982
- 1982-12-27 JP JP57232323A patent/JPS59121864A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370677A (en) * | 1976-12-06 | 1978-06-23 | Fujitsu Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS628552A (ja) * | 1985-07-04 | 1987-01-16 | Toshiba Corp | 半導体装置 |
| US5962913A (en) * | 1996-01-19 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Bipolar transistor having a particular contact structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05864B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-01-06 |