JPS59121190A - 帯状シリコン結晶製造装置 - Google Patents
帯状シリコン結晶製造装置Info
- Publication number
- JPS59121190A JPS59121190A JP23282082A JP23282082A JPS59121190A JP S59121190 A JPS59121190 A JP S59121190A JP 23282082 A JP23282082 A JP 23282082A JP 23282082 A JP23282082 A JP 23282082A JP S59121190 A JPS59121190 A JP S59121190A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- band
- shaped silicon
- crucible
- structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 97
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 70
- 239000010703 silicon Substances 0.000 title claims abstract description 70
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 65
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000000155 melt Substances 0.000 description 19
- 230000005499 meniscus Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23282082A JPS59121190A (ja) | 1982-12-25 | 1982-12-25 | 帯状シリコン結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23282082A JPS59121190A (ja) | 1982-12-25 | 1982-12-25 | 帯状シリコン結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59121190A true JPS59121190A (ja) | 1984-07-13 |
| JPS618040B2 JPS618040B2 (enrdf_load_stackoverflow) | 1986-03-11 |
Family
ID=16945286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23282082A Granted JPS59121190A (ja) | 1982-12-25 | 1982-12-25 | 帯状シリコン結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121190A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0398863U (enrdf_load_stackoverflow) * | 1990-01-30 | 1991-10-15 |
-
1982
- 1982-12-25 JP JP23282082A patent/JPS59121190A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS618040B2 (enrdf_load_stackoverflow) | 1986-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20140261155A1 (en) | Crucible for controlling oxygen and related methods | |
| US4121965A (en) | Method of controlling defect orientation in silicon crystal ribbon growth | |
| JPWO2014189008A1 (ja) | 炭化珪素単結晶及びその製造方法 | |
| JPS59121190A (ja) | 帯状シリコン結晶製造装置 | |
| EP1538242A1 (en) | Heater for crystal formation, apparatus for forming crystal and method for forming crystal | |
| JPS6047236B2 (ja) | 帯状シリコン結晶製造装置 | |
| JPS58135626A (ja) | 化合物半導体単結晶の製造方法及び製造装置 | |
| JPH04305087A (ja) | 単結晶製造方法及び単結晶製造装置 | |
| JP4344021B2 (ja) | ＩｎＰ単結晶の製造方法 | |
| JPS6111914B2 (enrdf_load_stackoverflow) | ||
| JP2757865B2 (ja) | ▲ｉｉｉ▼−▲ｖ▼族化合物半導体単結晶の製造方法 | |
| JP3788077B2 (ja) | 半導体結晶の製造方法および製造装置 | |
| JPH0154320B2 (enrdf_load_stackoverflow) | ||
| JPS59182292A (ja) | 帯状シリコン結晶製造装置 | |
| JP2814796B2 (ja) | 単結晶の製造方法及びその装置 | |
| JPS5950632B2 (ja) | 帯状シリコン結晶の成長装置 | |
| JPS6350390A (ja) | 単結晶の成長方法 | |
| JPS59227797A (ja) | 単結晶の引上げ方法 | |
| JP2017193469A (ja) | アフターヒータ及びサファイア単結晶製造装置 | |
| JP2000327490A (ja) | シリコン結晶の製造方法およびその製造装置 | |
| JP2773441B2 (ja) | ＧａＡｓ単結晶の製造方法 | |
| JPS5950640B2 (ja) | 帯状シリコン結晶の製造装置 | |
| JP2003342096A (ja) | 化合物半導体単結晶の製造方法 | |
| JPS63310789A (ja) | 単結晶の製造方法及び製造装置 | |
| JP2004161559A (ja) | 化合物半導体製造装置 |