JPH0154320B2 - - Google Patents

Info

Publication number
JPH0154320B2
JPH0154320B2 JP19112884A JP19112884A JPH0154320B2 JP H0154320 B2 JPH0154320 B2 JP H0154320B2 JP 19112884 A JP19112884 A JP 19112884A JP 19112884 A JP19112884 A JP 19112884A JP H0154320 B2 JPH0154320 B2 JP H0154320B2
Authority
JP
Japan
Prior art keywords
crystal
dies
band
shaped silicon
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19112884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6168391A (ja
Inventor
Micha Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP19112884A priority Critical patent/JPS6168391A/ja
Publication of JPS6168391A publication Critical patent/JPS6168391A/ja
Publication of JPH0154320B2 publication Critical patent/JPH0154320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP19112884A 1984-09-12 1984-09-12 帯状シリコン結晶製造装置 Granted JPS6168391A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19112884A JPS6168391A (ja) 1984-09-12 1984-09-12 帯状シリコン結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19112884A JPS6168391A (ja) 1984-09-12 1984-09-12 帯状シリコン結晶製造装置

Publications (2)

Publication Number Publication Date
JPS6168391A JPS6168391A (ja) 1986-04-08
JPH0154320B2 true JPH0154320B2 (enrdf_load_stackoverflow) 1989-11-17

Family

ID=16269334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19112884A Granted JPS6168391A (ja) 1984-09-12 1984-09-12 帯状シリコン結晶製造装置

Country Status (1)

Country Link
JP (1) JPS6168391A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115722750B (zh) * 2022-10-21 2024-06-25 郑州机械研究所有限公司 铜铝线夹感应钎焊装置及其钎焊方法

Also Published As

Publication number Publication date
JPS6168391A (ja) 1986-04-08

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Legal Events

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