JPS6168391A - 帯状シリコン結晶製造装置 - Google Patents
帯状シリコン結晶製造装置Info
- Publication number
- JPS6168391A JPS6168391A JP19112884A JP19112884A JPS6168391A JP S6168391 A JPS6168391 A JP S6168391A JP 19112884 A JP19112884 A JP 19112884A JP 19112884 A JP19112884 A JP 19112884A JP S6168391 A JPS6168391 A JP S6168391A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- dies
- shaped silicon
- band
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 121
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 abstract description 16
- 239000000155 melt Substances 0.000 abstract description 6
- 230000007423 decrease Effects 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910002804 graphite Inorganic materials 0.000 abstract description 3
- 239000010439 graphite Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 14
- 230000005499 meniscus Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19112884A JPS6168391A (ja) | 1984-09-12 | 1984-09-12 | 帯状シリコン結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19112884A JPS6168391A (ja) | 1984-09-12 | 1984-09-12 | 帯状シリコン結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6168391A true JPS6168391A (ja) | 1986-04-08 |
| JPH0154320B2 JPH0154320B2 (enrdf_load_stackoverflow) | 1989-11-17 |
Family
ID=16269334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19112884A Granted JPS6168391A (ja) | 1984-09-12 | 1984-09-12 | 帯状シリコン結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6168391A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115722750A (zh) * | 2022-10-21 | 2023-03-03 | 郑州机械研究所有限公司 | 铜铝线夹感应钎焊装置及其钎焊方法 |
-
1984
- 1984-09-12 JP JP19112884A patent/JPS6168391A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115722750A (zh) * | 2022-10-21 | 2023-03-03 | 郑州机械研究所有限公司 | 铜铝线夹感应钎焊装置及其钎焊方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0154320B2 (enrdf_load_stackoverflow) | 1989-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |