JPS5911688A - 青色発光素子 - Google Patents

青色発光素子

Info

Publication number
JPS5911688A
JPS5911688A JP57121555A JP12155582A JPS5911688A JP S5911688 A JPS5911688 A JP S5911688A JP 57121555 A JP57121555 A JP 57121555A JP 12155582 A JP12155582 A JP 12155582A JP S5911688 A JPS5911688 A JP S5911688A
Authority
JP
Japan
Prior art keywords
layer
type
carrier concentration
znse
blue light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57121555A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6351553B2 (enrdf_load_stackoverflow
Inventor
Kiyoshi Yoneda
清 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57121555A priority Critical patent/JPS5911688A/ja
Publication of JPS5911688A publication Critical patent/JPS5911688A/ja
Publication of JPS6351553B2 publication Critical patent/JPS6351553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/823Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO

Landscapes

  • Led Devices (AREA)
JP57121555A 1982-07-12 1982-07-12 青色発光素子 Granted JPS5911688A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57121555A JPS5911688A (ja) 1982-07-12 1982-07-12 青色発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57121555A JPS5911688A (ja) 1982-07-12 1982-07-12 青色発光素子

Publications (2)

Publication Number Publication Date
JPS5911688A true JPS5911688A (ja) 1984-01-21
JPS6351553B2 JPS6351553B2 (enrdf_load_stackoverflow) 1988-10-14

Family

ID=14814136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57121555A Granted JPS5911688A (ja) 1982-07-12 1982-07-12 青色発光素子

Country Status (1)

Country Link
JP (1) JPS5911688A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232379A (ja) * 1987-03-20 1988-09-28 Toshiba Corp 半導体発光素子
US5113233A (en) * 1988-09-02 1992-05-12 Sharp Kabushiki Kaisha Compound semiconductor luminescent device
US5506423A (en) * 1993-07-22 1996-04-09 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with ZnTe current spreading layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48104484A (enrdf_load_stackoverflow) * 1972-02-17 1973-12-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48104484A (enrdf_load_stackoverflow) * 1972-02-17 1973-12-27

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232379A (ja) * 1987-03-20 1988-09-28 Toshiba Corp 半導体発光素子
US5113233A (en) * 1988-09-02 1992-05-12 Sharp Kabushiki Kaisha Compound semiconductor luminescent device
US5616937A (en) * 1988-09-02 1997-04-01 Sharp Kabushiki Kaisha Compound semiconductor luminescent device
US5506423A (en) * 1993-07-22 1996-04-09 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with ZnTe current spreading layer

Also Published As

Publication number Publication date
JPS6351553B2 (enrdf_load_stackoverflow) 1988-10-14

Similar Documents

Publication Publication Date Title
US5925897A (en) Optoelectronic semiconductor diodes and devices comprising same
JP2650744B2 (ja) 発光ダイオード
JP2650730B2 (ja) 炭化珪素半導体を用いたpn接合型発光ダイオード
US5068204A (en) Method of manufacturing a light emitting element
JPH0821730B2 (ja) 炭化シリコン内に形成した青色発光ダイオード
JPH0468579A (ja) 化合物半導体発光素子
JPH0268968A (ja) 化合物半導体発光素子
US4606780A (en) Method for the manufacture of A3 B5 light-emitting diodes
JPS5911688A (ja) 青色発光素子
JPH0658977B2 (ja) 半導体素子
JPH05243613A (ja) 発光素子およびその製造方法
US5032539A (en) Method of manufacturing green light emitting diode
KR100693407B1 (ko) p형 산화아연 반도체를 이용한 산화아연 단파장 발광소자 제작방법
JP2001015803A (ja) AlGaInP発光ダイオード
Yu et al. High‐brightness II–VI light‐emitting diodes grown by molecular‐beam epitaxy on ZnSe substrates
JP2653901B2 (ja) 化合物半導体発光素子
JP2545212B2 (ja) 青色発光素子
JPH0728052B2 (ja) 半導体発光素子およびその製造方法
US5382813A (en) Light emission diode comprising a pn junction of p-type and n-type A1-containing ZnS compound semiconductor layers
JPS6351552B2 (enrdf_load_stackoverflow)
JPH05121327A (ja) 窒化ガリウム系薄膜の製造方法
JPS5880883A (ja) 青色発光素子
JPS63213378A (ja) 半導体発光素子の製造方法
JPS62211971A (ja) 半導体発光装置
KR100719915B1 (ko) 산화아연을 이용한 단파장 발광소자 제조방법