JPS59114828A - 酸化シリコン膜の製造方法 - Google Patents
酸化シリコン膜の製造方法Info
- Publication number
- JPS59114828A JPS59114828A JP57223053A JP22305382A JPS59114828A JP S59114828 A JPS59114828 A JP S59114828A JP 57223053 A JP57223053 A JP 57223053A JP 22305382 A JP22305382 A JP 22305382A JP S59114828 A JPS59114828 A JP S59114828A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- temperature
- spattering
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 5
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000010408 film Substances 0.000 claims abstract description 69
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 13
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 13
- 229910052682 stishovite Inorganic materials 0.000 abstract description 13
- 229910052905 tridymite Inorganic materials 0.000 abstract description 13
- 239000000377 silicon dioxide Substances 0.000 abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000011261 inert gas Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000010292 electrical insulation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 244000005687 Poranopsis paniculata Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57223053A JPS59114828A (ja) | 1982-12-21 | 1982-12-21 | 酸化シリコン膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57223053A JPS59114828A (ja) | 1982-12-21 | 1982-12-21 | 酸化シリコン膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59114828A true JPS59114828A (ja) | 1984-07-03 |
| JPH0223030B2 JPH0223030B2 (enrdf_load_stackoverflow) | 1990-05-22 |
Family
ID=16792093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57223053A Granted JPS59114828A (ja) | 1982-12-21 | 1982-12-21 | 酸化シリコン膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59114828A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61236127A (ja) * | 1985-04-12 | 1986-10-21 | Internatl Rectifier Corp Japan Ltd | 半導体装置の製造方法 |
-
1982
- 1982-12-21 JP JP57223053A patent/JPS59114828A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61236127A (ja) * | 1985-04-12 | 1986-10-21 | Internatl Rectifier Corp Japan Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0223030B2 (enrdf_load_stackoverflow) | 1990-05-22 |
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