JPH029449B2 - - Google Patents
Info
- Publication number
- JPH029449B2 JPH029449B2 JP57223052A JP22305282A JPH029449B2 JP H029449 B2 JPH029449 B2 JP H029449B2 JP 57223052 A JP57223052 A JP 57223052A JP 22305282 A JP22305282 A JP 22305282A JP H029449 B2 JPH029449 B2 JP H029449B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- sio
- silicon oxide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 52
- 229910004298 SiO 2 Inorganic materials 0.000 description 27
- 238000004544 sputter deposition Methods 0.000 description 22
- 239000010410 layer Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57223052A JPS59114827A (ja) | 1982-12-21 | 1982-12-21 | 酸化シリコン膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57223052A JPS59114827A (ja) | 1982-12-21 | 1982-12-21 | 酸化シリコン膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59114827A JPS59114827A (ja) | 1984-07-03 |
| JPH029449B2 true JPH029449B2 (enrdf_load_stackoverflow) | 1990-03-02 |
Family
ID=16792077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57223052A Granted JPS59114827A (ja) | 1982-12-21 | 1982-12-21 | 酸化シリコン膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59114827A (enrdf_load_stackoverflow) |
-
1982
- 1982-12-21 JP JP57223052A patent/JPS59114827A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59114827A (ja) | 1984-07-03 |