JPS59113667A - 薄膜トランジスタの製造法 - Google Patents

薄膜トランジスタの製造法

Info

Publication number
JPS59113667A
JPS59113667A JP57223411A JP22341182A JPS59113667A JP S59113667 A JPS59113667 A JP S59113667A JP 57223411 A JP57223411 A JP 57223411A JP 22341182 A JP22341182 A JP 22341182A JP S59113667 A JPS59113667 A JP S59113667A
Authority
JP
Japan
Prior art keywords
layer
film
amorphous silicon
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57223411A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6357944B2 (enExample
Inventor
Satoru Kawai
悟 川井
Toshiro Kodama
敏郎 児玉
Yasuhiro Nasu
安宏 那須
Kenichi Yanai
梁井　健一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57223411A priority Critical patent/JPS59113667A/ja
Publication of JPS59113667A publication Critical patent/JPS59113667A/ja
Publication of JPS6357944B2 publication Critical patent/JPS6357944B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP57223411A 1982-12-20 1982-12-20 薄膜トランジスタの製造法 Granted JPS59113667A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57223411A JPS59113667A (ja) 1982-12-20 1982-12-20 薄膜トランジスタの製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57223411A JPS59113667A (ja) 1982-12-20 1982-12-20 薄膜トランジスタの製造法

Publications (2)

Publication Number Publication Date
JPS59113667A true JPS59113667A (ja) 1984-06-30
JPS6357944B2 JPS6357944B2 (enExample) 1988-11-14

Family

ID=16797720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57223411A Granted JPS59113667A (ja) 1982-12-20 1982-12-20 薄膜トランジスタの製造法

Country Status (1)

Country Link
JP (1) JPS59113667A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159873A (ja) * 1984-08-31 1986-03-27 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタおよびその製造方法
JPS61139069A (ja) * 1984-12-10 1986-06-26 Fuji Xerox Co Ltd 薄膜トランジスタおよびその製造方法
JPS61145870A (ja) * 1984-12-19 1986-07-03 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタおよびその製造方法
JPS61145869A (ja) * 1984-12-19 1986-07-03 Matsushita Electric Ind Co Ltd 薄膜トランジスタ
JPS6237966A (ja) * 1985-08-12 1987-02-18 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JPS62171160A (ja) * 1986-01-22 1987-07-28 Sharp Corp 薄膜トランジスタ
US4958205A (en) * 1985-03-29 1990-09-18 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing the same
JPH04186735A (ja) * 1990-11-20 1992-07-03 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH04206837A (ja) * 1990-11-30 1992-07-28 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
KR100290509B1 (ko) * 1996-12-10 2001-07-12 가시오 가즈오 트랜지스터어레이의제조방법

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159873A (ja) * 1984-08-31 1986-03-27 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタおよびその製造方法
JPS61139069A (ja) * 1984-12-10 1986-06-26 Fuji Xerox Co Ltd 薄膜トランジスタおよびその製造方法
JPS61145870A (ja) * 1984-12-19 1986-07-03 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタおよびその製造方法
JPS61145869A (ja) * 1984-12-19 1986-07-03 Matsushita Electric Ind Co Ltd 薄膜トランジスタ
US4958205A (en) * 1985-03-29 1990-09-18 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing the same
EP0196915B1 (en) * 1985-03-29 1991-08-14 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
US5137841A (en) * 1985-03-29 1992-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a thin film transistor using positive and negative photoresists
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
JPS6237966A (ja) * 1985-08-12 1987-02-18 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JPS62171160A (ja) * 1986-01-22 1987-07-28 Sharp Corp 薄膜トランジスタ
JPH04186735A (ja) * 1990-11-20 1992-07-03 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH04206837A (ja) * 1990-11-30 1992-07-28 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
KR100290509B1 (ko) * 1996-12-10 2001-07-12 가시오 가즈오 트랜지스터어레이의제조방법

Also Published As

Publication number Publication date
JPS6357944B2 (enExample) 1988-11-14

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