JPS59112416A - 薄膜ヘツドの製造方法 - Google Patents
薄膜ヘツドの製造方法Info
- Publication number
- JPS59112416A JPS59112416A JP22329582A JP22329582A JPS59112416A JP S59112416 A JPS59112416 A JP S59112416A JP 22329582 A JP22329582 A JP 22329582A JP 22329582 A JP22329582 A JP 22329582A JP S59112416 A JPS59112416 A JP S59112416A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- etching
- conductor
- conductor pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004020 conductor Substances 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 54
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910010272 inorganic material Inorganic materials 0.000 claims description 7
- 239000011147 inorganic material Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22329582A JPS59112416A (ja) | 1982-12-20 | 1982-12-20 | 薄膜ヘツドの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22329582A JPS59112416A (ja) | 1982-12-20 | 1982-12-20 | 薄膜ヘツドの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59112416A true JPS59112416A (ja) | 1984-06-28 |
JPS6250883B2 JPS6250883B2 (enrdf_load_stackoverflow) | 1987-10-27 |
Family
ID=16795897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22329582A Granted JPS59112416A (ja) | 1982-12-20 | 1982-12-20 | 薄膜ヘツドの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59112416A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222010A (ja) * | 1985-03-27 | 1986-10-02 | Fuji Photo Film Co Ltd | 平坦化方法 |
JPS63102010A (ja) * | 1986-10-17 | 1988-05-06 | Matsushita Electric Ind Co Ltd | 薄膜磁気ヘツドの製造方法 |
JPS63195815A (ja) * | 1987-02-09 | 1988-08-12 | Sumitomo Special Metals Co Ltd | 垂直磁気記録再生薄膜ヘッドの製造方法 |
JPS63195816A (ja) * | 1987-02-09 | 1988-08-12 | Sumitomo Special Metals Co Ltd | 薄膜ヘツドの製造方法 |
-
1982
- 1982-12-20 JP JP22329582A patent/JPS59112416A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222010A (ja) * | 1985-03-27 | 1986-10-02 | Fuji Photo Film Co Ltd | 平坦化方法 |
JPS63102010A (ja) * | 1986-10-17 | 1988-05-06 | Matsushita Electric Ind Co Ltd | 薄膜磁気ヘツドの製造方法 |
JPS63195815A (ja) * | 1987-02-09 | 1988-08-12 | Sumitomo Special Metals Co Ltd | 垂直磁気記録再生薄膜ヘッドの製造方法 |
JPS63195816A (ja) * | 1987-02-09 | 1988-08-12 | Sumitomo Special Metals Co Ltd | 薄膜ヘツドの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6250883B2 (enrdf_load_stackoverflow) | 1987-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3801880A (en) | Multilayer interconnected structure for semiconductor integrated circuit and process for manufacturing the same | |
US4881144A (en) | Thin film magnetic head | |
JPS61175919A (ja) | 薄膜磁気ヘツドの製造方法 | |
JPS59112416A (ja) | 薄膜ヘツドの製造方法 | |
US4613404A (en) | Materials which exhibit a surface active effect with vacuum baked photoresists and method of using the same | |
JP2008007830A (ja) | めっき方法 | |
JP2752305B2 (ja) | 回路基板 | |
JP2938341B2 (ja) | 同軸構造の配線の形成方法 | |
KR950006343B1 (ko) | 반도체 장치의 제조방법 | |
JPH0658729B2 (ja) | 薄膜磁気ヘツドの製造方法 | |
JPS6227675B2 (enrdf_load_stackoverflow) | ||
JPS60173839A (ja) | 基板の平担化法 | |
JPH06150253A (ja) | 薄膜磁気ヘッドとその製造方法 | |
JPH04201576A (ja) | サーマルヘツド及びその製造方法 | |
JPS59217341A (ja) | 半導体集積回路装置の製造方法 | |
JPH0334675B2 (enrdf_load_stackoverflow) | ||
JPH02137329A (ja) | 多層配線用Al薄膜 | |
JPH0493029A (ja) | 半導体装置の製造方法 | |
JPH0657455B2 (ja) | 多層配線基板の製造方法 | |
JPH0546708B2 (enrdf_load_stackoverflow) | ||
JPS61263178A (ja) | 超電導集積回路の製造方法 | |
JPS60143414A (ja) | 薄膜磁気ヘツドの製造方法 | |
JPS59195845A (ja) | 多層配線の製造方法 | |
JPS5857615A (ja) | 薄膜磁気ヘツド | |
JPS61164239A (ja) | 半導体装置 |