JPS59111302A - 厚膜型正特性半導体素子の製造方法 - Google Patents

厚膜型正特性半導体素子の製造方法

Info

Publication number
JPS59111302A
JPS59111302A JP22144982A JP22144982A JPS59111302A JP S59111302 A JPS59111302 A JP S59111302A JP 22144982 A JP22144982 A JP 22144982A JP 22144982 A JP22144982 A JP 22144982A JP S59111302 A JPS59111302 A JP S59111302A
Authority
JP
Japan
Prior art keywords
thick film
powder
film type
wsi2
batio3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22144982A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0313722B2 (enrdf_load_stackoverflow
Inventor
野井　慶一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP22144982A priority Critical patent/JPS59111302A/ja
Publication of JPS59111302A publication Critical patent/JPS59111302A/ja
Publication of JPH0313722B2 publication Critical patent/JPH0313722B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thermistors And Varistors (AREA)
JP22144982A 1982-12-16 1982-12-16 厚膜型正特性半導体素子の製造方法 Granted JPS59111302A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22144982A JPS59111302A (ja) 1982-12-16 1982-12-16 厚膜型正特性半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22144982A JPS59111302A (ja) 1982-12-16 1982-12-16 厚膜型正特性半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59111302A true JPS59111302A (ja) 1984-06-27
JPH0313722B2 JPH0313722B2 (enrdf_load_stackoverflow) 1991-02-25

Family

ID=16766904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22144982A Granted JPS59111302A (ja) 1982-12-16 1982-12-16 厚膜型正特性半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS59111302A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0313722B2 (enrdf_load_stackoverflow) 1991-02-25

Similar Documents

Publication Publication Date Title
JPS59111302A (ja) 厚膜型正特性半導体素子の製造方法
JPS61101008A (ja) 厚膜型正特性半導体素子の製造方法
JPS6012702A (ja) 厚膜型正特性半導体素子の製造方法
JPS60261109A (ja) 厚膜型正特性半導体素子の製造方法
JPS6012701A (ja) 厚膜型正特性半導体素子の製造方法
JPS61101007A (ja) 厚膜型正特性半導体素子の製造方法
JPS6158204A (ja) 厚膜型正特性半導体素子の製造方法
JPS60206102A (ja) 厚膜型正特性半導体素子の製造方法
JPS6158209A (ja) 厚膜型正特性半導体素子の製造方法
JPS60261105A (ja) 厚膜型正特性半導体素子の製造方法
JPS60261107A (ja) 厚膜型正特性半導体素子の製造方法
JPS6158207A (ja) 厚膜型正特性半導体素子の製造方法
JPS6158210A (ja) 厚膜型正特性半導体素子の製造方法
JPS60261108A (ja) 厚膜型正特性半導体素子の製造方法
JPS61101004A (ja) 厚膜型正特性半導体素子の製造方法
JPS6158205A (ja) 厚膜型正特性半導体素子の製造方法
JPS61101009A (ja) 厚膜型正特性半導体素子の製造方法
JPS60206105A (ja) 厚膜型正特性半導体素子の製造方法
JPS60260102A (ja) 厚膜型正特性半導体素子の製造方法
JPS6158203A (ja) 厚膜型正特性半導体素子の製造方法
JPS6158208A (ja) 厚膜型正特性半導体素子の製造方法
JPS61101006A (ja) 厚膜型正特性半導体素子の製造方法
JPS6012705A (ja) 厚膜型正特性半導体素子の製造方法
JPS6012704A (ja) 厚膜型正特性半導体素子の製造方法
JPS6158211A (ja) 厚膜型正特性半導体素子の製造方法