JPS59108374A - 光電変換装置の作製方法 - Google Patents

光電変換装置の作製方法

Info

Publication number
JPS59108374A
JPS59108374A JP57218811A JP21881182A JPS59108374A JP S59108374 A JPS59108374 A JP S59108374A JP 57218811 A JP57218811 A JP 57218811A JP 21881182 A JP21881182 A JP 21881182A JP S59108374 A JPS59108374 A JP S59108374A
Authority
JP
Japan
Prior art keywords
electrode
photoelectric conversion
active region
conversion device
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57218811A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6331951B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57218811A priority Critical patent/JPS59108374A/ja
Publication of JPS59108374A publication Critical patent/JPS59108374A/ja
Publication of JPS6331951B2 publication Critical patent/JPS6331951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP57218811A 1982-12-14 1982-12-14 光電変換装置の作製方法 Granted JPS59108374A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57218811A JPS59108374A (ja) 1982-12-14 1982-12-14 光電変換装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57218811A JPS59108374A (ja) 1982-12-14 1982-12-14 光電変換装置の作製方法

Publications (2)

Publication Number Publication Date
JPS59108374A true JPS59108374A (ja) 1984-06-22
JPS6331951B2 JPS6331951B2 (enExample) 1988-06-27

Family

ID=16725709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57218811A Granted JPS59108374A (ja) 1982-12-14 1982-12-14 光電変換装置の作製方法

Country Status (1)

Country Link
JP (1) JPS59108374A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6454769A (en) * 1987-08-26 1989-03-02 Fuji Electric Res Manufacture of amorphous silicon solar cell
US7728366B2 (en) 2004-04-05 2010-06-01 Nec Corporation Photodiode and method for fabricating same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176778A (en) * 1981-03-31 1982-10-30 Rca Corp Solar battery array

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176778A (en) * 1981-03-31 1982-10-30 Rca Corp Solar battery array

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6454769A (en) * 1987-08-26 1989-03-02 Fuji Electric Res Manufacture of amorphous silicon solar cell
US7728366B2 (en) 2004-04-05 2010-06-01 Nec Corporation Photodiode and method for fabricating same
US7883911B2 (en) 2004-04-05 2011-02-08 Nec Corporation Method for fabricating photodiodes

Also Published As

Publication number Publication date
JPS6331951B2 (enExample) 1988-06-27

Similar Documents

Publication Publication Date Title
US4824488A (en) Photovoltaic device
JPH0290573A (ja) モノリシツク太陽電池及びバイパス・ダイオード・システム
JPWO2013161069A1 (ja) 太陽電池モジュール及び太陽電池モジュールの製造方法
JP2021531639A (ja) 高光電変換率を有する薄膜太陽電池及びその製造プロセス
JPH0518274B2 (enExample)
JPH053151B2 (enExample)
JPS59108374A (ja) 光電変換装置の作製方法
JPS5996779A (ja) 光電変換装置
JPS59108373A (ja) 光電変換装置
JPS5996778A (ja) 光電変換装置作製方法
JPS6018973A (ja) 光電変換半導体装置
JP2798772B2 (ja) 光起電力装置の製造方法
JPS59220978A (ja) 光起電力装置の製造方法
JP3588997B2 (ja) 薄膜太陽電池およびその製造方法
JPS6059784A (ja) 光電変換半導体装置の作製方法
JPS61163671A (ja) 薄膜太陽電池
JPS59155973A (ja) 光電変換半導体装置
JPS5935491A (ja) 光半導体装置
JPH0415631B2 (enExample)
JP2001036104A (ja) 太陽電池モジュール
JPH01184960A (ja) 光起電力装置の製造方法
JPS58219775A (ja) 光電変換装置の作製方法
JPS6197875A (ja) 半導体装置の製造方法
JPS59193075A (ja) 光電変換半導体装置作製方法
WO2013161069A1 (ja) 太陽電池モジュール及び太陽電池モジュールの製造方法