JPS59108374A - Manufacture of photoelectric converter - Google Patents

Abstract

PURPOSE:To enable to enhance the visual value as the whole of a photoelectric converter by a method wherein a second electrode is formed mutually on nonsingle crystal semiconductor selectively, a first electrode and the second electrode are connected mutually at the connecting part of an inactive region, and the first electrode, the nonsingle crystal semiconductor and the second electrode in an active region are scribed according to a laser irradiating beam. CONSTITUTION:A first electrode consisting of a CTF, a nonsingle crystal semiconductor 4 to generate a photovoltage according to irradiation of light are formed on a substrate 2 in an active region. The electrodes 6 of a connecting part on the lower side and the electrodes 7 of a connecting part on the upper side make ohmic contact to construct a connecting part 18. YAG laser (wavelength is about 1mum) is irradiated from the glass substrate side making average output to 3-5W, the beam diameter to 30-50mum, the beam scanning speed to 1-10m/min, and generally making to 3m/min to perform laser scribing 20. The first electrode 3, the semiconductor 4 and a second electrode 5 are provided on the transparent substrate 2 according to scribing lines 20 of 10-300mum width, favorably of 30-100mm. width nearly in the same shape having the same arrangement.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a hybrid photoelectric conversion device in which a plurality of photoelectric conversion cells are arranged on a transparent substrate.

This invention relates to combining photoelectric conversion cells (hereinafter simply referred to as cells) on a substrate, and the distance between adjacent cells is set to 300μ or less, which is difficult to see with the naked eye, and the visual perception of the entire device is improved. The purpose is to increase the value of

Therefore, in the present invention, a first electrode on a transparent substrate in a cell provided in an active region, a non-single crystal semiconductor that generates a photovoltaic force upon irradiation with light, and
each having approximately the same shape as the second electrode on the semiconductor;
By adopting an approximately uniform fR (self-registration region) structure, it is possible to avoid a decrease in manufacturing yield due to deviations in the alignment accuracy of compounding, and also to create this self-registration region (hereinafter referred to as 8G) using a laser beam. Because it uses a scribe method, the distance between each cell is 300p or less (0.3mm
(hereinafter) preferably 30 to 150μ.

That is, after the first electrode, semiconductor, and second electrode have been formed, laser light is irradiated from the transparent substrate side to instantaneously heat and vaporize all of them.

For this reason, there is no need to match the masks required for compounding with high precision, and in the end, all the masks can be combined simultaneously with K11G.
Characteristic (3) is that it is formed by law.

Conventionally, non-single-crystal semiconductors, that is, non-single-crystal silicon containing amorphous silicon, are the main component, and 7' (P-N junction heterojunction or P-N-P-N...P-N junction and multiple 1N
, an attempt was made to generate photovoltaic force by light irradiation using a bonding method in which PIJ junctions are stacked.

However, since the upper and lower electrodes of a semiconductor having such a junction are connected in series, the lower electrode of one cell must be electrically connected to the upper electrode of the adjacent cell, and each cell must be connected to each other. A necessary condition was electrical isolation.

FIG. 1 shows a typical example of a conventional structure.

Figure 1 (4) shows a photoelectric conversion device (30) connected to a light-transmitting substrate (2).
). In the drawing, the connecting portion OI connects the active region 00) which generates photovoltaic force upon irradiation with light and each cell (1), (-L'). It has a non-active area a and a. A-A' in Figure 1 (4)
, B-Bi' vertical cross-sectional views are shown in FIG.

In the active region, each cell (-L) (() is the transparent conductive film () of the first C'WIL pole on the glass substrate (2).
(3) of OT F) are separated from each other between each cell. Further, the semiconductors (4) are connected to each other. In addition, in the inactive area, the upper electrode of cell (1) is connected to the lower electrode of cell (1) at connecting part 0→, and this is twisted so that five cells are connected between external electrodes (8) and (9). They are connected in series. 3. of this cell. i=ki υ 49 i17
Buoy Situation 1 1 no 1 Miemi Rai X).

However, at first glance, this conventional structure appears to have a high manufacturing yield because the semiconductor (4) is the substrate. However, in reality, three types of masks are used, and if there is even a slight deviation between the first mask and the third mask (i.e., it is natural for a metal mask to have a deviation of 1 to 3 mm).
A vertical sectional view like the line in Figure 1 is created. In the result (B), (b) is the cell and ◇1 is the isolation region, and the α→ cell of φ) and 6
4 isolation, and the cell area is 20 to 40
It turns out that the percentage will actually decrease as well. Furthermore, since a mask is used, the isolation area in (B) is 1
~2mm For example, since it has L5nm, it is possible to
If m is a deviation of 2 mm, 00 in the cell will be 8 mm, and the isolation width will be e + 4 @ 3.5 mm.
The effective area will be reduced by nearly 30 inches.

Therefore, it has been extremely desirable to make the combination of the upper and lower electrodes into a self-registration region in order to improve the efficiency.

Furthermore, in the conventional example shown in FIG.
When used multiple times, the same metal film is formed in only one direction of the mask, which causes stress, and the closeness to the surface on which it is formed becomes insufficient. As a result, the metal between the mask and the substrate,
OT'lF is blindly folded, and as shown in Fig. 1 (5), electric insulation #I!
(isolation), if adjacent cells are short-circuited or otherwise short-circuited, this gap does not provide an effective area and visually reduces the product value.

Furthermore, in order to eliminate floating due to the warp of the mask, it is possible to increase the thickness of the mask to 300 to δ00p4X 3 to 5 mm. This eliminates the scratches, but due to the thickness of the electrodes (3) and (5), another drawback has occurred: the ends become thin and dark. There has been a need for a photoelectric conversion device based on a completely new structure and manufacturing method that allows mask alignment at the connecting portion to be performed with low precision and substantially high precision mask alignment in the active region.

The present invention was made in response to such a need, and details thereof will be described below with reference to the drawings.

FIG. 2 shows the manufacturing process and apparatus of the photoelectric conversion device of the present invention.

In the drawings, a light-transmitting substrate (for example, glass) is used as the substrate. This drawing shows a case where five cells are connected in series. That is, the photoelectric conversion device of the present invention has an active region 00) and an inactive region (11), and all cells in the active region have a first electrode and a non-single crystal semiconductor on the lower side, and a second electrode on the upper side.
The electrodes were self-registered (8G) and had approximately the same shape and arrangement.

This is because after the first electrode, the semiconductor, and the second electrode were provided all over the active region, they were all scribed with a laser beam. In particular, the laser with (here Y
AG laser) scribing was performed on the transparent substrate side according to a pattern stored and controlled by a computer. As a result, 8G became possible.

Furthermore, since the laser spot is generally 30 to 50μ (3μ is possible from a structural perspective, we used 30μ, which has a relatively long focal length, considering yield).
p 11 10 ~10 (3M?) L L Otsu/
b)I~p(3s!/' t i 47,.

In FIG. 2(A) and (A-(XA-2)), the active region 00) and the connecting electrode (6) of the non-active region are connected to the first transparent conductive film using the first mask. The electrode (3) is connected to the substrate (2
) was formed on top.

This OTF is formed by stacking xTo (indium oxide containing 10% or less of tin oxide) or tin oxide in a single layer or in multiple layers. Generally, it is formed to a thickness of 11500-2 δooX using an electron beam evaporation method.

In the drawing, the vertical cross-sectional view of A-B-B' in (A)
−1)←1)K are shown in correspondence with each other. In such drawings, the mask is only the shaded area in the non-single crystal region α])K of the body), and the pattern is simple, so
The mask is inherently difficult to lift off the substrate. In addition, this mask has the feature that it does not require low alignment accuracy and there is no problem even if it is slightly floating above the substrate (2).

Next, as shown in FIG. 2(B), a non-single crystal semiconductor is formed as an active region (10). The mask at this time is a simple pattern with only diagonal lines. od in FIG. 2(B),
Vertical sectional views taken along line DD' are shown in correspondence with (B-1), (B-2) and K.

Thus, the active region has a substrate (2) as shown in (B-1)K.
A first electrode made of K OTF was formed, and a non-single crystal semiconductor (4) which generates a photovoltaic force upon irradiation with light was formed.

This semiconductor (4) is, for example, 81
x < 1 In general, P-type with X・0.1~0.8) is made to a thickness of about 100^, and the main component is silicon to which τ-type hydrogen or halogen element is added. The semiconductor was further crystallized into a KN type to a thickness of 0.4 to 0.6 μm, and a P-N′!g composite structure was obtained, which is a semiconductor whose main component is 71c silicon.
liXOI-,! , 0.7~0.8)-Engine(Si)
-N (μ081) -P (Sixth-, x=o
, 1~0.8) -E (day 1xGe, -,x2 O
, 6~0.8) -M (μ081)
It may also be a tandem structure made of IN cotton.

Next, the pattern shown in FIG. 2(0) was formed using a third mask. A vertical sectional view corresponding to B-m:IP-F' in FIG. 2 (0) is shown at (o-1) (o-2)K.

As is clear from this drawing, the electrode (6) of the lower connection part
The electrode (1) of the upper connecting part makes ohmic contact with the upper connecting part 01 to form a connecting part 01. In this state, the active region only constitutes a single layered structure, and as is clear from the vertical cross-sectional view (0-1), the second electrode (5) is placed on the semiconductor (4). ) is simply formed. This second electrode is made of TO having a thickness of 900 to 1300 A, for example 1050 A, and a metal whose main component is aluminum to which silicon, chromium, or titanium is added (10) to a thickness of 1000 to 2000 A. Of course, if there is no market for reliability, it is also possible to remove the To.

Moreover, ITO alone was sufficient for this electrode.

In order to improve the characteristics by utilizing the reflected light from the back electrode, the above-mentioned 170+A1 was preferable. Further, it was preferable to improve the reliability only by using TOTO. This is because the metal of the back electrode and the semiconductor react easily. After this, in Figure 2 (B), laser scribing (
) was performed using a YAG laser (wavelength approximately 1 μ) with an average output of 3 to 5 W on the glass substrate side, and a beam diameter of 30 to 5 W.
50 Beam running speed 1-10m/min Generally 3m
2 (D-1), (n-2)
, CD-3), and (D-4).

As is clear from this drawing, the transparent substrate (2), the first electrode (3), the semiconductor (4), and the second electrode (5) have a width of 10 mm.
~300μ, preferably 30~100μ scribe lines (e) are provided with approximately the same shape and the same arrangement^1).

In Figures 2 (CD) to (D-4), the upper surfaces of these are coated with an organic resin (a) such as silicone, epoxy or polyimide to a thickness of 1 to 20 microns. Another feature of the present invention is that the laser scribing step (b) is performed from the glass side.

This is to prevent short-circuiting or leakage between the thin film-shaped first and second electrodes by heating the first and second electrodes by laser irradiation, spewing them out to the outside, scattering them, and scribing them.

Conversely, by irradiating this laser light from above in the drawing, the second IJl pole is laser annealed, and the first electrode and the semiconductor are evaporated and diffused, resulting in a short circuit, resulting in no use at all. It has been experimentally determined that this is not the case according to the present invention.

That is, the present invention is possible only by using a light-transmitting and somewhat heat-resistant substrate, such as a glass substrate, and by irradiating the glass substrate side with a laser beam. In addition, it could be applied in exactly the same way to the scribe Q force between each photoelectric conversion device.
Why not make one photoelectric conversion device on a glass substrate with a size of 126m x 5.4am (20am x 400m)?
or 20cmX60cm or 40cmX120om
It is possible to create many photoelectric conversion devices at once on a large glass plate. Finally, we understand that it is only necessary to divide these into individual photoelectric conversion devices.Of course, a large number (100 to 1000
It is not impossible to fabricate photoelectric conversion devices (individuals) and finally divide them in the conventional example shown in FIG. Conventional methods have their own limitations because floating is extremely likely to occur.

Shows an outline of the turn.

In the drawing -yo 4hi & 1be Σy+r, Shunme 41 (3
0)...(3o) indicate independent photoelectric conversion devices. The active region is (lO)(16), and the inactive region 01) is simply provided in a band shape. For this reason, since a mask is used only to connect the band-shaped 27 (loose) adjacent cells, the accuracy of this matching may be loose, and the amount or quantity is extremely easy.

Furthermore, as is clear from FIG. 2(D), the effective area of the cell is effective except for a very small part of the active region with a width of 10 to 300 pixels, and it is possible to obtain an effective area of 95 ± 2 inches or more. The structure of the present invention is much superior to 80±30% of the conventional example.

In view of the above, the present invention only needs to increase the area and finally divide it into each photoelectric conversion device w, which is 1/3 compared to the conventional one.
It can be manufactured at a price of ~115. ■The active region uses a self-registration method, so the effective efficiency of the cell is high and its variation is small. ■The manufacturing yield is low because high mask alignment accuracy is not required. High ■ The scribe line between each cell is a self-registration region, and the laser beam spot No. 9 ~ 10 ~ 3 of 1/10 ~ 1150 of 1 ~ 1.5 mm of ljl.
00μ, preferably 30 to 100μ.

As a result, we were able to provide high added value without making visible hybridization visible to the naked eye ■There is no blurring at the periphery of the cell due to the floating of the mask, and there is no blurring at the periphery of the conventional example. The description of 0 or more having many features such as no visible structure and high added value is not limited to the patterns shown in FIGS. 2 and 3 of the present invention. number of cells,
The thickness is determined by its design specifications.

Further, for the semiconductor, a plasma OVD method or a reduced pressure OVD method was used.

Applications are possible not only to P-N junctions, heterojunctions, and tandem junctions, but also to many structures that are mainly composed of non-single-crystal silicon.

[Brief explanation of drawings]

FIG. 1 is a vertical cross-sectional view of a conventional photoelectric conversion device. FIGS. 2 and 3 are a plan view and a vertical cross-sectional view of the photoelectric conversion device of the present invention according to the manufacturing process. : License applicant 1000-11, Makoto 6 375-1-2 (9) (E) 111 Hat [Yes]

Claims (1)

[Claims] (1) An active region on a transparent substrate that generates a photovoltaic force upon irradiation with light, and a connecting portion and external electrodes that connect a plurality of photoelectric conversion cells provided in the active region to each other. In a method for manufacturing a photoelectric conversion device, a first mask constituting a connecting portion is disposed in a Y inactive region on a transparent substrate, and a first electrode having a transparent conductive film is selectively attached to the first electrode. a step of forming a non-single crystal semiconductor that generates a photovoltaic force upon irradiation with light on the active region; and a second mask forming a 44W portion on the non-active region. arranging and selectively forming second electrodes on the non-single crystal semiconductor, and connecting the first and second electrodes to each other at a connecting portion of the non-active region in a shape-17; and separating the plurality of photoelectric conversion cells by scribing the first electrode, the non-single crystal semiconductor, and the second electrode of the active region with laser irradiation light. A method for manufacturing a photoelectric conversion device, comprising forming a plurality of photoelectric conversion cells in the active region of a photosensitive substrate by connecting them to each other in the non-active region. 2. In claim 1, by irradiating and scanning the laser beam from the transparent substrate side, the first electrode, the non-single crystal semiconductor, and the second electrode in the irradiation area are scattered. A method for manufacturing a photoelectric conversion device, characterized by performing laser scribing.