JPS59107584A - 発光ダイオ−ド - Google Patents

発光ダイオ−ド

Info

Publication number
JPS59107584A
JPS59107584A JP57216956A JP21695682A JPS59107584A JP S59107584 A JPS59107584 A JP S59107584A JP 57216956 A JP57216956 A JP 57216956A JP 21695682 A JP21695682 A JP 21695682A JP S59107584 A JPS59107584 A JP S59107584A
Authority
JP
Japan
Prior art keywords
hole
sheet
emitting diode
foil
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57216956A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0475672B2 (OSRAM
Inventor
Yukio Inagaki
幸男 稲垣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP57216956A priority Critical patent/JPS59107584A/ja
Publication of JPS59107584A publication Critical patent/JPS59107584A/ja
Publication of JPH0475672B2 publication Critical patent/JPH0475672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F13/00—Illuminated signs; Luminous advertising
    • G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
    • G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Illuminated Signs And Luminous Advertising (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP57216956A 1982-12-13 1982-12-13 発光ダイオ−ド Granted JPS59107584A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57216956A JPS59107584A (ja) 1982-12-13 1982-12-13 発光ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57216956A JPS59107584A (ja) 1982-12-13 1982-12-13 発光ダイオ−ド

Publications (2)

Publication Number Publication Date
JPS59107584A true JPS59107584A (ja) 1984-06-21
JPH0475672B2 JPH0475672B2 (OSRAM) 1992-12-01

Family

ID=16696546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57216956A Granted JPS59107584A (ja) 1982-12-13 1982-12-13 発光ダイオ−ド

Country Status (1)

Country Link
JP (1) JPS59107584A (OSRAM)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002017405A1 (de) * 2000-08-23 2002-02-28 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu dessen herstellung, modul und vorrichtung mit einem solchen modul
WO2004004017A3 (de) * 2002-06-26 2004-08-05 Osram Opto Semiconductors Gmbh Oberflächenmontierbare lumineszenz- und/oder photo-diode und verfahren zu deren herstellung
WO2005064696A1 (de) * 2003-12-30 2005-07-14 Osram Opto Semiconductors Gmbh Strahlungsemittierendes und/oder strahlungsempfangendes halbleiterbauelement und verfahren zu dessen herstellung
EP1162669A3 (en) * 2000-06-09 2006-07-05 SANYO ELECTRIC Co., Ltd. Light irradiating device, manufacturing method thereof, and lighting apparatus using the light irradiating device
EP1280211A3 (en) * 2001-07-25 2006-09-20 Sanyo Electric Co., Ltd. Light emitting device with improved heat dissipation and its manufacturing method
JP2007519233A (ja) * 2003-12-30 2007-07-12 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング ビーム発光型及び／又はビーム受光型半導体構成素子
EP1253650A3 (en) * 2001-04-25 2008-02-20 Avago Technologies ECBU IP (Singapore) Pte. Ltd. Surface-mount type light emitting diode
JP2008047836A (ja) * 2006-08-21 2008-02-28 Hamamatsu Photonics Kk 半導体装置および半導体装置製造方法
JP2012191151A (ja) * 2011-03-11 2012-10-04 Lingsen Precision Industries Ltd バー型ｌｅｄライトの製造方法、および、この方法で製造されたバー型ｌｅｄライト

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1162669A3 (en) * 2000-06-09 2006-07-05 SANYO ELECTRIC Co., Ltd. Light irradiating device, manufacturing method thereof, and lighting apparatus using the light irradiating device
US7446347B2 (en) 2000-08-23 2008-11-04 Osram Opto Semiconductors Gmbh Optoelectronic component and method for the production thereof, module and device comprising a module of this type
WO2002017405A1 (de) * 2000-08-23 2002-02-28 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu dessen herstellung, modul und vorrichtung mit einem solchen modul
EP1253650A3 (en) * 2001-04-25 2008-02-20 Avago Technologies ECBU IP (Singapore) Pte. Ltd. Surface-mount type light emitting diode
EP1280211A3 (en) * 2001-07-25 2006-09-20 Sanyo Electric Co., Ltd. Light emitting device with improved heat dissipation and its manufacturing method
CN100388512C (zh) * 2002-06-26 2008-05-14 奥斯兰姆奥普托半导体有限责任公司 可表面安装的微型发光二极管或光电二极管以及它们的制造方法
JP2005531152A (ja) * 2002-06-26 2005-10-13 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 表面実装可能な小型発光ダイオードおよび／またはフォトダイオードおよび該ダイオードを製造するための方法
WO2004004017A3 (de) * 2002-06-26 2004-08-05 Osram Opto Semiconductors Gmbh Oberflächenmontierbare lumineszenz- und/oder photo-diode und verfahren zu deren herstellung
JP2007519233A (ja) * 2003-12-30 2007-07-12 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング ビーム発光型及び／又はビーム受光型半導体構成素子
WO2005064696A1 (de) * 2003-12-30 2005-07-14 Osram Opto Semiconductors Gmbh Strahlungsemittierendes und/oder strahlungsempfangendes halbleiterbauelement und verfahren zu dessen herstellung
US7666715B2 (en) 2003-12-30 2010-02-23 Osram Opto Semiconductors Gmbh Radiation-emitting and/or radiation-receiving semiconductor component and method for the production thereof
JP4939946B2 (ja) * 2003-12-30 2012-05-30 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ビーム発光型及び／又はビーム受光型半導体構成素子
JP2008047836A (ja) * 2006-08-21 2008-02-28 Hamamatsu Photonics Kk 半導体装置および半導体装置製造方法
JP2012191151A (ja) * 2011-03-11 2012-10-04 Lingsen Precision Industries Ltd バー型ｌｅｄライトの製造方法、および、この方法で製造されたバー型ｌｅｄライト

Also Published As

Publication number Publication date
JPH0475672B2 (OSRAM) 1992-12-01

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