CN100388512C - 可表面安装的微型发光二极管或光电二极管以及它们的制造方法 - Google Patents

可表面安装的微型发光二极管或光电二极管以及它们的制造方法 Download PDF

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CN100388512C
CN100388512C CNB038151758A CN03815175A CN100388512C CN 100388512 C CN100388512 C CN 100388512C CN B038151758 A CNB038151758 A CN B038151758A CN 03815175 A CN03815175 A CN 03815175A CN 100388512 C CN100388512 C CN 100388512C
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chip
lead frame
connecting portion
led
plastic film
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J·索尔格
G·博纳
G·维特尔
R·布伦纳
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Abstract

本发明涉及一种可以表面安装的微型发光二极管，它具有一个有一引线框架(16)的芯片壳体和一个布置在运行线框架(16)上的并与之电接触的半导体芯片(22)，该芯片含有一个有源的光发射部位，按照本发明这引线框架(16)由一种可以弯曲的多层分层(12，14)构成。

Description

可表面安装的微型发光二极管或光电二极管以及它们的制造方法
技术领域
本发明涉及一种可以表面安装的微型发光二极管和/或光电二极管，它具有一个有一个引线框架(Leadframe)的芯片壳体和一个布置在引线框架上并与之电接触的半导体芯片，该芯片包含一个有源的光发射部位。本发明也涉及一种制造这样的发光二极管的方法。
背景技术
为了扩展使用范围并降低制造成本试图制造越来越小的结构尺寸的发光二极管和/或光电二极管。很小的发光二极管例如对于移动电话键盘的背景照明来说是必需要的。
目前可用LED(发光二极管)外壳，它具有尺寸为0402(相当于0.5mm×1.0mm)的操作面和构件高度400μm-600μm。然而用当前的外壳方案就难于继续降低构件的高度。
发明内容
本发明的任务是提出一种开头所述种类的可以表面安装的微型发光二极管和/或光电二极管，它们允许大大减小其结构高度。
为了完成上述任务，本发明提出一种可以表面安装的微型发光二极管和/或光电二极管，具有一个有一个引线框架的芯片外壳和一个布置在引线框架上并与之电接触的半导体芯片，该芯片含有一个有源的发射光线的和/或接收光线的部位，其特征在于，引线框架由一个可弯曲的多层分层构成，该可弯曲的多层分层包括一个金属膜和一个布置在这金属膜上并与之连接的塑料膜，该金属膜包括第一个和第二个芯片连接部位；而且塑料膜在布置于这些芯片连接部位上的部位里具有凹槽，半导体芯片用第一个接触面布置在第一个芯片连接部位上，并用第二个接触面借助于连接焊丝与第二个芯片连接部位连接，该连接焊丝通过布置在第二个芯片连接部位上的塑料膜的凹槽引导至第二个芯片连接部位。
按照本发明在这种可以表面安装的微型发光二极管和/或光电二极管中规定了：这引线框架由一种可以弯曲的多层分层构成。本发明基于以下思路：通过将接收光线的和/或接收光线的半导体芯片安装在一个可弯曲的引线框架上来设计一种具有小的操作面的发光二极管和/或光电二极管，它们可以以高的堆积密度并因此用低的生产成本来制成。
在本发明的一种优选的设计方案中，可弯曲的多层分层包括一个金属薄膜和一个布置在这金属薄膜上并与之相连接的塑料薄膜层。
这里优选的是：金属薄膜有第一个和第二个芯片连接部位，而且塑料薄膜在布置于这芯片连接部位上的部位处具有凹槽的话。半导体芯片则可以优选用第一个接触面布置在第一个芯片连接部位上，并用第二个接触面与第二个芯片连接部位导电连接，例如借助于一种连接焊丝。这意味着，半导体芯片穿过第一个空缺安装在第一个芯片连接部位上，而且这第二个接触面与第二个芯片连接部位的电连接则穿过第二个空缺建立起来。
金属薄膜的厚度在本发明的一个优选设计方案中小于80μm，而且优选在30μm和60μm之间，含30μm和60μm。这样一种最小的金属化厚度就可以实现很小的外壳高度，小于400μm，尤其小于350μm。更为有利的是这种结构高度也可以用一种150μm的芯片高度来实现，而不必同时使芯片的第二个接触面和第二个芯片连接部位之间的一个焊丝的突起设计得很小。不言而喻，用此结构形式也可以用传统的按标准的芯片厚度(220μm和250μm之间)来达到特别小的结构高度。
在一种优选的实施形式中塑料薄膜由一种环氧树脂薄膜构成。因此进一步优选的是：塑料薄膜的厚度为小于80μm，最好为30μm和60μm之间含30μm和60μm的一种厚度。
在本发明的一种适宜的改进设计中，使半导体芯片埋入到一种透明的或者半透明的压注塑料里。可以用一种挤压成型塑料来代替压注塑料。
本发明对于其中的引线框架具有的尺寸约为0.5mm×1.0mm或更小的那种微型发光二极管来说特别有利，尤其对于那些其构件高度为400μm或更小的，优选为大约350μm或更小的发光二极管。
除了所述的优点之外，上述类型的发光二极管具有较小的热阻Rth，因此由于良好的散热就可以有高的损耗功率。所述的构造也就允许在窄的腔室上用多个芯片(多芯片设计Multi Chip Designs)实现灵活的设计。
一种可以表面安装的发光二极管的制造方法按照本发明包括以下工序：
-制备一种由一个可弯曲的多层分层构成的引线框架，它具有至少一个第一个和至少一个第二个芯片连接部位；
-制备至少一个半导体芯片，它包含有一个有源的、发射光的和/或接收光的部位，并且有第一个和第二个接触面；
-将半导体芯片用第一个接触面安装在引线框架的第一个芯片连接部位上；
-将第二个接触面与引线框架的第二个芯片连接部位连接；
-借助于用包封材料对半导体芯片的注塑、周围压注或挤压压入(以下统称为“包封”)来制成半导体芯片的包封，这种包封材料可以透过发射光和/或接收光，尤其是用相应的透明的或半透明的塑料材料。
在一种优选的设计方案中，制备一种引线框架的工序包括要制备和冲压一个薄的金属膜，以便确定第一个和第二个芯片连接部位。
在另外一种适宜的设计方案中，制备一种引线框架的工序包括要制备和冲压一个薄的塑料膜，以便确定用于与半导体芯片电连接的凹槽。
这两种薄膜最好在制备一个引线框架的工序中相互粘结起来。
按照上面所述，更加适宜的是：在包封工序中将包封材料喷注到多层分层的塑料薄膜上。这保证了包封物体良好地连接在柔性的引线框架上。
此外在包封工序中有利地通过多个布置在多层分层上的组合件来导通一个喷注通道。因此，与通过一个自身的通道对每个构件进行按标准的喷注相比较，减少了喷注通道的数量，因此可以在最窄的空间上实现许多构件。
在按照本发明的方法的一种优选的方案中，使引线框架的第一个和第二个芯片连接部位在安装半导体芯片、连接第二个接触面和包封导体芯片的工序中短路和接地。这样就阻止了静电荷并避免了由于构件上的静电放电(ESD)而造成损伤。
此外在按本发明的方法中优选对多个布置在多层分层上的组件在包封工序之后测试其功能能力。为此使各个组件在保持其机械连接下电气分离开。
通过应用柔性的引线框架材料就可以实施按照本发明的方法，卷盘至卷盘(Reel to Reel)(从一个展开卷轴至一个卷绕卷轴)的所有工艺过程，这就使制造时的搬运费用最低。
此外在所描述的方案中可以不必对构件捆扎。如果想要的话，可以在芯片测试之后在柔性的框架上与一个晶片图一起提供多个相应的构件。另一种方法也可以在芯片测试之后如以前那样将构件分离开、捆扎和供货。
本发明的其它有利的设计方案、特征和细节部分可见对实施例和附图的说明。
按照本发明的微型发光二极管和/或光电二极管的其它优点、改进设计和设计方案见如下参照附图进行了说明的实施例。在附图中只是分别表示出了对于理解本发明来说重要的一些元件。
附图说明
图1：实施例的一个剖视简图；
图2：图1所示实施例的一个立体分解图。
具体实施方式
图1和2概略表示了一个整体用10表示的可表面安装的微型发光二极管。
微型发光二极管10具有一个柔性的引线框架16、一个具有一个有源的发光部位38的LED-芯片22和一个包封物体30。柔性的引线框架16由一个60μm厚的金属膜12和一个同样也是60μm厚的环氧树脂膜14组成，它们高度准确地相互粘结起来。
金属膜12的冲压应使它确定出一个阴极18和一个阳极20，分别在阴极和阳极上在塑料膜14里冲出凹槽34和36。LED-芯片22用其底边24穿过凹槽34而连接到阴极18上。阳极20通过连接边28穿过凹槽36与LED-芯片22的上边26连接。
为了能够在柔性框架上实现尽可能多的构件，例如采用了所谓空穴对空穴的成型来进行包封。同时通过使压注通道通过这些构件而减少压注通道数。
在发光二极管工作时所产生的损耗热量有效地通过金属膜12散出(标号32)。
总之微型发光二极管10有一个操作面(footprint，轨迹)，其大小为大约0.5mm×1.0mm，而其总的构件高度仅为350μm。
在上述说明、附图中所公布的本发明的特征，无论是单个的或是任意组合对于实现本发明来说都是很重要的。可以使用一种光电二极管芯片来代替发光二极管芯片或者可以使一种用于发光二极管和用于光电二极管的芯片工作。

Claims (16)

1.可以表面安装的微型发光二极管或光电二极管，具有一个有一个引线框架(16)的芯片外壳和一个布置在引线框架(16)上并与之电接触的半导体芯片(22)，该芯片含有一个有源的发射光线的和/或接收光线的部位，其特征在于，
引线框架(16)由一个可弯曲的多层分层(12，14)构成，该可弯曲的多层分层(12，14)包括一个金属膜(12)和一个布置在这金属膜上并与之连接的塑料膜(14)，
该金属膜(12)包括第一个和第二个芯片连接部位(18，20)；而且塑料膜在布置于这些芯片连接部位(18，20)上的部位里具有凹槽(34，36)，
半导体芯片(22)用第一个接触面(24)穿过第一凹槽(34)布置在第一个芯片连接部位(18)上，并用第二个接触面(20)借助于连接焊丝(28)与第二个芯片连接部位(20)连接，该连接焊丝(28)通过布置在第二个芯片连接部位(20)上的塑料膜(14)的第二凹槽(36)引导至第二个芯片连接部位(20)。
2.按权利要求1所述的可以表面安装的微型发光二极管或光电二极管，其特征在于，塑料膜(14)与金属膜(12)粘结连接。
3.按权利要求1或2所述的可以表面安装的微型发光二极管或光电二极管，其特征在于，金属膜(12)的厚度小于80μm。
4.按权利要求1所述的可以表面安装的微型发光二极管或光电二极管，其特征在于，塑料膜由一种环氧树脂膜(14)构成。
5.按权利要求1所述的可以表面安装的微型发光二极管或光电二极管，其特征在于，塑料膜(14)的厚度小于80μm。
6.按权利要求1所述的可以表面安装的微型发光二极管或光电二极管，其特征在于，半导体芯片(22)埋入在一种包封材料(30)里。
7.按权利要求1所述的可以表面安装的微型发光二极管或光电二极管，其特征在于，引线框架(16)的尺寸为0.5mm×1.0mm或更小。
8.按权利要求1或7所述的可以表面安装的微型发光二极管或光电二极管，其特征在于，发光二极管(10)的总厚度为400μm或更小。
9.用于制造一种可以表面安装的微型发光二极管或光电二极管的方法，具有以下工序：
-制备一个由一个可弯曲的多层分层组成的引线框架，该可弯曲的多层分层包括一个金属膜和一个布置在这金属膜上并与之连接的塑料膜，该金属膜包括第一个和第二个芯片连接部位；而且塑料膜在布置于这些芯片连接部位上的部位里具有凹槽；
-制备一个半导体芯片，它含有一个有源的发射光线的部位并具有第一个和第二个接触面；
-用第一个接触面穿过第一凹槽将半导体芯片安装在引线框架的第一个芯片连接部位上；
-将第二个接触面借助于连接焊丝与引线框架的第二个芯片连接部位连接，该连接焊丝通过布置在第二个芯片连接部位上的塑料膜的第二凹槽引导至第二个芯片连接部位；
-用透明的或半透明的包封材料包封半导体芯片。
10.按权利要求9所述的方法，其特征在于，制备一个引线框架的工序包括制备和冲压一个金属膜，以便确定第一和第二个芯片连接部位。
11.按权利要求9或10所述的方法，其特征在于，制备一个引线框架的工序包括制备和冲压一个塑料膜，以便确定用于半导体芯片电连接的凹槽。
12.按权利要求9所述的方法，其特征在于，制备一个引线框架的工序包括粘结上述二种膜。
13.按权利要求9所述的方法，其特征在于，在包封工序中将包封材料喷注到多层分层的塑料膜上。
14.按权利要求9或13所述的方法，其特征在于，在包封工序中使喷注通道穿过多个布置在多层分层上的芯片。
15.按权利要求9所述的方法，其特征在于，引线框架的第一个和第二个芯片连接部位在安装半导体芯片、连接第二个接触面和包封半导体芯片的工序中短路和接地。
16.按权利要求9所述的方法，其特征在于，多个布置在多层分层上的芯片在包封工序之后测试其功能能力；为此使各个芯片在保持其机械连接情况下电气分离开。
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