CN1666349A - 可表面安装的微型发光二极管和/或光电二极管以及它们的制造方法 - Google Patents

可表面安装的微型发光二极管和/或光电二极管以及它们的制造方法 Download PDF

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CN1666349A
CN1666349A CN03815175.8A CN03815175A CN1666349A CN 1666349 A CN1666349 A CN 1666349A CN 03815175 A CN03815175 A CN 03815175A CN 1666349 A CN1666349 A CN 1666349A
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photodiode
led
chip
lead frame
semiconductor chip
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CN100388512C (zh
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J·索尔格
G·博纳
G·维特尔
R·布伦纳
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Ams Osram International GmbH
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Abstract

本发明涉及一种可以表面安装的微型发光二极管，它具有一个有一引线框架(16)的芯片壳体和一个布置在运行线框架(16)上的并与之电接触的半导体芯片(22)，该芯片含有一个有源的光发射部位，按照本发明这引线框架(16)由一种可以弯曲的多层分层(12，14)构成。

Description

可表面安装的微型发光二极管和/或 光电二极管以及它们的制造方法
本发明涉及一种可以表面安装的微型发光二极管和/或光电二极管，它具有一个有一个引线框架(Leadframe)的芯片壳体和一个布置在引线框架上并与之电接触的半导体芯片，该芯片包含一个有源的光发射部位。本发明也涉及一种制造这样的发光二极管的方法。
为了扩展使用范围并降低制造成本试图制造越来越小的结构尺寸的发光二极管和/或光电二极管。很小的发光二极管例如对于移动电话键盘的背景照明来说是必需要的。
目前可用LED(发光二极管)外壳，它具有尺寸为0402(相当于0.5mm×1.0mm)的操作面和构件高度400μm-600μm。然而用当前的外壳方案就难于继续降低构件的高度。
本发明的任务是提出一种开头所述种类的可以表面安装的微型发光二极管和/或光电二极管，它们允许大大减小其结构高度。
该任务通过一种具有权利要求1的特征的可以表面安装的微型发光二极管和/或光电二极管以及通过具有权利要求12特征的用来制造可以表面安装的发光二极管和/或光电二极管的方法来解决。本发明的有利的改进方案和设计方案可见从属权利要求书。
按照本发明在这种可以表面安装的微型发光二极管和/或光电二极管中规定了：这引线框架由一种可以弯曲的多层分层构成。本发明基于以下思路：通过将接收光线的和/或接收光线的半导体芯片安装在一个可弯曲的引线框架上来设计一种具有小的操作面的发光二极管和/或光电二极管，它们可以以高的堆积密度并因此用低的生产成本来制成。
在本发明的一种优选的设计方案中，可弯曲的多层分层包括一个金属薄膜和一个布置在这金属薄膜上并与之相连接的塑料薄膜层。
这里优选的是：金属薄膜有第一个和第二个芯片连接部位，而且塑料薄膜在布置于这芯片连接部位上的部位处具有凹槽的话。半导体芯片则可以优选用第一个接触面布置在第一个芯片连接部位上，并用第二个接触面与第二个芯片连接部位导电连接，例如借助于一种连接焊丝。这意味着，半导体芯片穿过第一个空缺安装在第一个芯片连接部位上，而且这第二个接触面与第二个芯片连接部位的电连接则穿过第二个空缺建立起来。
金属薄膜的厚度在本发明的一个优选设计方案中小于80μm，而且优选在30μm和60μm之间，含30μm和60μm。这样一种最小的金属化厚度就可以实现很小的外壳高度，小于400μm，尤其小于350μm。更为有利的是这种结构高度也可以用一种150μm的芯片高度来实现，而不必同时使芯片的第二个接触面和第二个芯片连接部位之间的一个焊丝的突起设计得很小。不言而喻，用此结构形式也可以用传统的按标准的芯片厚度(220μm和250μm之间)来达到特别小的结构高度。
在一种优选的实施形式中塑料薄膜由一种环氧树脂薄膜构成。因此进一步优选的是：塑料薄膜的厚度为小于80μm，最好为30μm和60μm之间含30μm和60μm的一种厚度。
在本发明的一种适宜的改进设计中，使半导体芯片埋入到一种透明的或者半透明的压注塑料里。可以用一种挤压成型塑料来代替压注塑料。
本发明对于其中的引线框架具有的尺寸约为0.5mm×1.0mm或更小的那种微型发光二极管来说特别有利，尤其对于那些其构件高度为400μm或更小的，优选为大约350μm或更小的发光二极管。
除了所述的优点之外，上述类型的发光二极管具有较小的热阻Rth，因此由于良好的散热就可以有高的损耗功率。所述的构造也就允许在窄的腔室上用多个芯片(多芯片设计Multi Chip Designs)实现灵活的设计。
一种可以表面安装的发光二极管的制造方法按照本发明包括以下工序：
-制备一种由一个可弯曲的多层分层构成的引线框架，它具有至少一个第一个和至少一个第二个芯片连接部位；
-制备至少一个半导体芯片，它包含有一个有源的、发射光的和/或接收光的部位，并且有第一个和第二个接触面；
-将半导体芯片用第一个接触面安装在引线框架的第一个芯片连接部位上；
-将第二个接触面与引线框架的第二个芯片连接部位连接；
-借助于用包封材料对半导体芯片的注塑、周围压注或挤压压入(以下统称为“包封”)来制成半导体芯片的包封，这种包封材料可以透过发射光和/或接收光，尤其是用相应的透明的或半透明的塑料材料。
在一种优选的设计方案中，制备一种引线框架的工序包括要制备和冲压一个薄的金属膜，以便确定第一个和第二个芯片连接部位。
在另外一种适宜的设计方案中，制备一种引线框架的工序包括要制备和冲压一个薄的塑料膜，以便确定用于与半导体芯片电连接的凹槽。
这两种薄膜最好在制备一个引线框架的工序中相互粘结起来。
按照上面所述，更加适宜的是：在包封工序中将包封材料喷注到多层分层的塑料薄膜上。这保证了包封物体良好地连接在柔性的引线框架上。
此外在包封工序中有利地通过多个布置在多层分层上的组合件来导通一个喷注通道。因此，与通过一个自身的通道对每个构件进行按标准的喷注相比较，减少了喷注通道的数量，因此可以在最窄的空间上实现许多构件。
在按照本发明的方法的一种优选的方案中，使引线框架的第一个和第二个芯片连接部位在安装半导体芯片、连接第二个接触面和包封半导体芯片的工序中短路和接地。这样就阻止了静电荷并避免了由于构件上的静电放电(ESD)而造成损伤。
此外在按本发明的方法中优选对多个布置在多层分层上的组件在包封工序之后测试其功能能力。为此使各个组件在保持其机械连接下电气分离开。
通过应用柔性的引线框架材料就可以实施按照本发明的方法，卷盘至卷盘(Reel to Reel)(从一个展开卷轴至一个卷绕卷轴)的所有工艺过程，这就使制造时的搬运费用最低。
此外在所描述的方案中可以不必对构件捆扎。如果想要的话，可以在芯片测试之后在柔性的框架上与一个晶片图一起提供多个相应的构件。另一种方法也可以在芯片测试之后如以前那样将构件分离开、捆扎和供货。
本发明的其它有利的设计方案、特征和细节部分可见从属权利要求、对实施例和附图的说明。
按照本发明的微型发光二极管和/或光电二极管的其它优点、改进设计和设计方案见如下参照附图进行了说明的实施例。在附图中只是分别表示出了对于理解本发明来说重要的一些元件。附图所示为：
图1：实施例的一个剖视简图；
图2：图1所示实施例的一个立体分解图。
图1和2概略表示了一个整体用10表示的可表面安装的微型发光二极管。
微型发光二极管10具有一个柔性的引线框架16、一个具有一个有源的发光部位38的LED-芯片22和一个包封物体30。柔性的引线框架16由一个60μm厚的金属膜12和一个同样也是60μm厚的环氧树脂膜14组成，它们高度准确地相互粘结起来。
金属膜12的冲压应使它确定出一个阴极18和一个阳极20，分别在阴极和阳极上在塑料膜14里冲出凹槽34和36。LED-芯片22用其底边24穿过凹槽34而连接到阴极18上。阳极20通过连接边28穿过凹槽36与LED-芯片22的上边26连接。
为了能够在柔性框架上实现尽可能多的构件，例如采用了所谓空穴对空穴的成型来进行包封。同时通过使压注通道通过这些构件而减少压注通道数。
在发光二极管工作时所产生的损耗热量有效地通过金属膜12散出(标号32)。
总之微型发光二极管10有一个操作面(footprint，轨迹)，其大小为大约0.5mm×1.0mm，而其总的构件高度仅为350μm。
在上述说明、附图以及在权利要求书中所公布的本发明的特征，无论是单个的或是任意组合对于实现本发明来说都是很重要的。可以使用一种光电二极管芯片来代替发光二极管芯片或者可以使一种用于发光二极管和用于光电二极管的芯片工作。

Claims (19)

1.可以表面安装的微型发光二极管和/或光电二极管，具有一个有一个引线框架(16)的芯片外壳和一个布置在引线框架(16)上并与之电接触的半导体芯片(22)，该芯片含有一个有源的接收光线的和/或接收光线的部位，其特征在于，引线框架(16)由一个可弯曲的多层分层(12，14)构成。
2.按权利要求1所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，可弯曲的多层分层(12，14)包括一个金属膜(12)和一个布置在这金属膜上并与之连接的塑料膜(14)。
3.按权利要求2所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，塑料薄膜(14)与金属薄膜(12)粘结连接。
4.按权利要求2或3所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，金属膜(12)包括第一个和第二个芯片连接部位(18，20)；而且塑料薄膜在布置于这些芯片连接部位(18，20)上的部位里具有凹槽(34，36)。
5.按权利要求4所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，半导体芯片(22)用第一个接触面(24)布置在第一个芯片连接部位(18)上，并用第二个接触面(20)与第二个芯片连接部位(20)连接。
6.按权利要求2至5中任意一项所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，金属膜(12)的厚度小于80μm，尤其在30μm和60μm之间，含30μm和60μm。
7.按权利要求2至6中任意一项所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，塑料薄膜由一种环氧树脂膜(14)构成。
8.按权利要求2至7中任意一项所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，塑料膜(14)的厚度小于80μm，尤其在30μm和60μm之间，含30μm和60μm。
9.按上述权利要求之一所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，半导体芯片(22)埋入在一种包封材料(30)里。
10.按上述权利要求之一所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，引线框架(16)的尺寸约为0.5mm×1.0mm或更小。
11.按上述权利要求之一所述的可以表面安装的微型发光二极管和/或光电二极管，其特征在于，发光二极管(10)的总厚度约为400μm或更小，优选为约350μm或更小。
12.用于制造尤其是按上述权利要求之一所述的一种可以表面安装的微型发光二极管和/或光电二极管的方法，具有以下工序：
-制备一个由一个可弯曲的多层分层组成的引线框架，它具有第一个和第二个芯片连接部位；
-制备一个半导体芯片，它合有一个有源的线光线的部位并具有第一个和第二个接触面；
-用第一个接触面将半导体芯片安装在引线框架的第一个芯片连接部位上；
-将第二个接触面与引线框架的第二个芯片连接部位连接；
-用透明的或半透明的包封材料包封半导体芯片。
13.按权利要求12所述的方法，其特征在于，制备一个引线框架的工序包括制备和冲压一个薄的金属膜，以便确定第一和第二个芯片连接部位。
14.按权利要求12或13所述的方法，其特征在于，制备一个引线框架的工序包括制备和冲压一个薄的塑料膜，以便确定用于半导体芯片电连接的凹槽。
15.按权利要求13和14所述的方法，其特征在于，制备一个引线框架的工序包括粘结上述二种薄膜。
16.按权利要求12至15中任意一项所述的方法，其特征在于，在包封工序中将包封材料喷注到多层分层的塑料膜上。
17.按权利要求12至16中任意一项所述的方法，其特征在于，在包封工序中使喷注通道穿过多个布置在多层分层上的芯片。
18.按权利要求12至17中任意一项所述的方法，其特征在于，引线框架的第一个和第二个芯片连接部位在安装半导体芯片、连接第二个接触面和包封半导体芯片的工序中短路和接地。
19.按权利要求12至18中任意一项所述的方法，其特征在于，多个布置在多层分层上的芯片在包封工序之后测试其功能能力；为此使各个芯片在保持其机械连接情况下电气分离开。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101621110B (zh) * 2005-11-25 2011-08-24 三星Led株式会社 侧面发光二极管封装件
CN101989586B (zh) * 2009-08-03 2012-03-21 中芯国际集成电路制造(上海)有限公司 金属接线端及其构造方法
CN107624198A (zh) * 2015-05-13 2018-01-23 兰克森控股公司 制造用于发光二极管的电路的方法以及通过该方法得到的电路
CN111323118A (zh) * 2018-12-17 2020-06-23 山东华光光电子股份有限公司 一种避免光串扰的探测半导体激光器出光的装置及其安装方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10237084A1 (de) 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements
DE10250911B4 (de) * 2002-10-31 2009-08-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Umhüllung und/oder zumindest eines Teiles eines Gehäuses eines optoelektronischen Bauelements
MXPA05005658A (es) * 2002-12-02 2005-08-16 3M Innovative Properties Co Sistema de iluminacion que utiliza una pluralidad de fuentes luminosas.
US20050116235A1 (en) * 2003-12-02 2005-06-02 Schultz John C. Illumination assembly
TWI275189B (en) * 2003-12-30 2007-03-01 Osram Opto Semiconductors Gmbh Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component
DE102006032416A1 (de) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
JP2008041923A (ja) * 2006-08-07 2008-02-21 Matsushita Electric Ind Co Ltd 発光装置
JP2008041922A (ja) * 2006-08-07 2008-02-21 Matsushita Electric Ind Co Ltd 発光装置
JP2008047836A (ja) * 2006-08-21 2008-02-28 Hamamatsu Photonics Kk 半導体装置および半導体装置製造方法
TW200937667A (en) * 2008-02-20 2009-09-01 Advanced Optoelectronic Tech Package structure of chemical compound semiconductor device and fabricating method thereof
DE102008044847A1 (de) * 2008-08-28 2010-03-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102008047100A1 (de) * 2008-09-12 2010-03-25 W.C. Heraeus Gmbh Substrat mit weißer Silberschicht
DE102008053489A1 (de) * 2008-10-28 2010-04-29 Osram Opto Semiconductors Gmbh Trägerkörper für ein Halbleiterbauelement, Halbleiterbauelement und Verfahren zur Herstellung eines Trägerkörpers
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
TWI533483B (zh) 2010-08-09 2016-05-11 Ｌｇ伊諾特股份有限公司 發光裝置
KR101114719B1 (ko) 2010-08-09 2012-02-29 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
DE102010049961A1 (de) * 2010-10-28 2012-05-03 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit einem Halbleiterchip, einem Trägersubstrat und einer Folie und ein Verfahren zu dessen Herstellung
TWI431218B (zh) * 2011-03-11 2014-03-21 Lingsen Precision Ind Ltd The manufacturing method and structure of LED light bar
DE102011101052A1 (de) * 2011-05-09 2012-11-15 Heraeus Materials Technology Gmbh & Co. Kg Substrat mit elektrisch neutralem Bereich
DE102011110799A1 (de) 2011-08-22 2013-02-28 Heraeus Materials Technology Gmbh & Co. Kg Substrat für den Aufbau elektronischer Elemente
DE102013202542A1 (de) 2013-02-18 2014-09-18 Heraeus Materials Technology Gmbh & Co. Kg Substrat zur Herstellung einer LED und Verfahren zu dessen Herstellung
DE102015112757A1 (de) * 2015-08-04 2017-02-09 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
CN111148460B (zh) 2017-08-14 2022-05-03 奥普托斯股份有限公司 视网膜位置跟踪
US10907787B2 (en) 2018-10-18 2021-02-02 Marche International Llc Light engine and method of simulating a flame

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3781596A (en) * 1972-07-07 1973-12-25 R Galli Semiconductor chip carriers and strips thereof
JPS58194383A (ja) * 1982-05-07 1983-11-12 Sumitomo Electric Ind Ltd 連続組立発光ダイオ−ド
JPS59107584A (ja) * 1982-12-13 1984-06-21 Casio Comput Co Ltd 発光ダイオ−ド
US4812421A (en) * 1987-10-26 1989-03-14 Motorola, Inc. Tab-type semiconductor process
US5042911A (en) * 1989-03-08 1991-08-27 Gte Products Corporation Method of making lighting lens
JP2739279B2 (ja) * 1993-06-30 1998-04-15 三菱電線工業株式会社 基板に実装された電子部品のモールド方法
JP2613846B2 (ja) * 1994-02-04 1997-05-28 帝国通信工業株式会社 電極シート片付きチップ型電子部品
JP3127195B2 (ja) * 1994-12-06 2001-01-22 シャープ株式会社 発光デバイスおよびその製造方法
JP3535602B2 (ja) * 1995-03-23 2004-06-07 松下電器産業株式会社 面実装型ｌｅｄ
JP3992301B2 (ja) * 1995-04-26 2007-10-17 シチズン電子株式会社 チップ型発光ダイオード
US6001671A (en) * 1996-04-18 1999-12-14 Tessera, Inc. Methods for manufacturing a semiconductor package having a sacrificial layer
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
SG60102A1 (en) * 1996-08-13 1999-02-22 Sony Corp Lead frame semiconductor package having the same and method for manufacturing the same
US6787389B1 (en) * 1997-10-09 2004-09-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having pads for connecting a semiconducting element to a mother board
US6184544B1 (en) * 1998-01-29 2001-02-06 Rohm Co., Ltd. Semiconductor light emitting device with light reflective current diffusion layer
DE19852832C2 (de) * 1998-11-17 2001-11-29 Heraeus Gmbh W C Verfahren zur Herstellung eines Metall-Kunststoff-Laminats
DE19918370B4 (de) * 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
JP3540769B2 (ja) * 2000-06-09 2004-07-07 三洋電機株式会社 光照射装置とその製造方法及びその光照射装置を用いた照明装置
TW507482B (en) * 2000-06-09 2002-10-21 Sanyo Electric Co Light emitting device, its manufacturing process, and lighting device using such a light-emitting device
JP3540770B2 (ja) * 2000-06-09 2004-07-07 三洋電機株式会社 光照射装置の製造方法
DE10041328B4 (de) * 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Verpackungseinheit für Halbleiterchips
EP1603158B1 (en) * 2003-03-11 2021-06-09 The Furukawa Electric Co., Ltd. Optical module, comprising printed wiring board, lead frame and multi-channel optical semiconductor element and method for manufacturing same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101621110B (zh) * 2005-11-25 2011-08-24 三星Led株式会社 侧面发光二极管封装件
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CN107624198B (zh) * 2015-05-13 2020-01-07 兰克森控股公司 制造用于发光二极管的电路的方法和由该方法得到的电路
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