JPS59107522A - 珪素含有材からなる素地表面に密着性良好なポリイミド層を形成する方法 - Google Patents
珪素含有材からなる素地表面に密着性良好なポリイミド層を形成する方法Info
- Publication number
- JPS59107522A JPS59107522A JP58229291A JP22929183A JPS59107522A JP S59107522 A JPS59107522 A JP S59107522A JP 58229291 A JP58229291 A JP 58229291A JP 22929183 A JP22929183 A JP 22929183A JP S59107522 A JPS59107522 A JP S59107522A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- polyimide
- polyimide layer
- dianhydride
- adhesion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Silicon Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58229291A JPS59107522A (ja) | 1983-12-05 | 1983-12-05 | 珪素含有材からなる素地表面に密着性良好なポリイミド層を形成する方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58229291A JPS59107522A (ja) | 1983-12-05 | 1983-12-05 | 珪素含有材からなる素地表面に密着性良好なポリイミド層を形成する方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56029240A Division JPS5813087B2 (ja) | 1981-02-27 | 1981-02-27 | シロキサン変性ポリイミド前駆体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59107522A true JPS59107522A (ja) | 1984-06-21 |
JPH0259621B2 JPH0259621B2 (enrdf_load_stackoverflow) | 1990-12-13 |
Family
ID=16889821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58229291A Granted JPS59107522A (ja) | 1983-12-05 | 1983-12-05 | 珪素含有材からなる素地表面に密着性良好なポリイミド層を形成する方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59107522A (enrdf_load_stackoverflow) |
-
1983
- 1983-12-05 JP JP58229291A patent/JPS59107522A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0259621B2 (enrdf_load_stackoverflow) | 1990-12-13 |
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