JPS5910585B2 - Manufacturing method of semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device in which a semiconductor element is assembled on a package substrate having electrode terminals patterned so as to overlap electrode terminals of the semiconductor element.

In recent years, instead of the conventional method of bonding a semiconductor element to a package made of ceramic or metal frame and wire-bonding its electrode terminal to a predetermined electrode terminal of the package with a thin wire of Al, Au, etc. Using a package substrate (hereinafter referred to as carrier tape) made of flexible metal foil and having thin strip electrode leads patterned so that the portion can be overlapped with the electrode terminal of the semiconductor element,
Many methods have been used to simultaneously bond a plurality of electrode terminals of the semiconductor element to electrode leads of a carrier tape.

However, this method has drawbacks such as extremely poor ability to dissipate heat generated from the semiconductor element because the back side of the semiconductor element is not bonded to the package. After bonding the semiconductor element 1 to the carrier tape 2, a metal plate 3 is attached to the back side of the semiconductor element.
A method is used in which a heat dissipating fin 6 serving as a heat dissipating body is attached to the metal plate 3 after the semiconductor element is sealed with a resin 5 or the like.

The manufacturing steps of this conventional method are shown in FIGS. 2a-c.

FIG. 2a shows a state in which the semiconductor element 1 is electrically and mechanically bonded to the electrode lead 2-a of the carrier tape 2.
In the figure, 2-b is an insulating film for supporting the electrode lead 2-a of the carrier tape 2. Figure 2b is Figure 2a
This figure shows a state in which a plate 3 made of Cu, Mo, Kovar, etc. is bonded to the back surface of the semiconductor element 1 shown in FIG. FIG. 2c shows a state in which the semiconductor element 1 shown in FIG. 2b and the joint portion between the electrode lead 2-a and the semiconductor element 1 are sealed from the outside air with a resin 5 such as epoxy or silicon. After sealing with resin 5 in this way, O is released onto metal plate 3 with resin, solder, etc. 7 Heat fin 6
Add and complete. However, in this conventional method, the bonding portion between the electrode lead 2-a and the semiconductor element 1 may be damaged due to stress, etc. when bonding the metal plate 3 to the back surface of the semiconductor element 1 bonded to the electrode lead 2-a. Trigger 5 Something can happen.

Furthermore, since there is an adhesive layer and a metal layer between the semiconductor element 1 and the heat dissipating fin 6, there are drawbacks such as an increase in thermal resistance. The present invention aims to improve these drawbacks.

Examples will be described below. FIG. 3 is a sectional view showing an embodiment of the present invention. In the figure, 8 is a plate-shaped cap made of ceramic, resin, metal whose surface has been insulated, or the like.

Further, the heat radiation fins 6 are directly attached to the back surface of the semiconductor element 1 using solder, adhesive, or the like 4. The manufacturing process is shown in FIGS. 4A and 4B. Figure 4a shows the state shown in Figure 2a,
A state in which the cap 8 is bonded to the surface of the semiconductor element 1 to be bonded to the electrode lead 2-a with a resin 5-a such as epoxy or silicone is shown. FIG. 4b shows the semiconductor device 1 shown in FIG. 4a.
A heat dissipating fin 6 is shown bonded to the back surface of the device using solder, adhesive, etc. 4. In this state, the exposed portion of the semiconductor element 1 is sealed with resin 5 to complete a semiconductor device. As can be seen from the above, according to the present invention, after bonding the semiconductor element 1 and the electrode lead 2-a, the cap 8 is bonded to fix the bonded portion of the semiconductor element 1 and the electrode lead 2-a, thereby making it possible to bond the semiconductor element 1 and the electrode lead 2-a. This prevents damage to the bonded portion due to stress when attaching the heat dissipation fins 6 on the back side of the semiconductor element 1, and also lowers thermal resistance because the heat dissipation fins 6 are bonded directly to the semiconductor element 1. Furthermore, if the surface of the semiconductor device is made flat by the cap 8, it is easier to mount the semiconductor device than the conventional device with a round surface. , the material, the material of the adhesive layer to which the heat dissipation fin is bonded, the material of the sealing resin, etc. are not subject to any restrictions.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a conventional semiconductor device, FIGS. 2A and 2C are sectional views showing the manufacturing process of the semiconductor device of FIG. 1, and FIG. 3 is a sectional view of a semiconductor device according to an embodiment of the present invention. Figure 4 A, b
FIG. 3 is a sectional view showing the manufacturing process of the semiconductor device. In the figure, 1 is a semiconductor element, 2 is a package substrate (carrier tape), 2-a is an electrode lead, 2-b is an insulating film, 4 is solder, adhesive resin, etc., 5, 5a is a sealing resin, 6 8 indicates a heat dissipation body (heat dissipation fin) and a cap.

Claims (1)

[Scope of Claims] 1. A package substrate having an electrode lead made of a metal strip patterned so that a portion thereof can be overlapped with the electrode terminal of a semiconductor element, and a predetermined position of the electrode lead of this package substrate. a semiconductor element electrically and mechanically bonded to the semiconductor element; a cap adhered to the opposite side of the package substrate to the side to which the semiconductor element is connected; a heat sink directly adhered to the back side of the semiconductor element; 1. A semiconductor device characterized by comprising a resin that is sealed with a resin. 2. A semiconductor device characterized in that the heat dissipation body is flat only in the part bonded to the semiconductor element and has fins formed in other parts to enhance the heat dissipation effect.