JPH04245462A - Semiconductor integrated circuit device and its manufacture - Google Patents

Abstract

PURPOSE:To improve the heat radiating property of a semiconductor integrated circuit device of a TAB system. CONSTITUTION:In this semiconductor integrated circuit device of a TAB system in which a semiconductor chip 4 is electrically connected to the leading end sections of leads 3 formed on tape carriers 2 through bumps 5, the semiconductor chip 4 is sealed with a sealing section 6 made of a potting resin, etc., in a state where a radiating fins 7 are stuck to the rear surface of the chip 4 with a bonding agent.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to semiconductor integrated circuit device technology, and particularly to TAB (Tape Automate) technology.
The present invention relates to a heat dissipation technique in a semiconductor integrated circuit device using the d Bonding method.

0002

2. Description of the Related Art The TAB method is a technique in which the tips of conductor leads repeatedly formed on a tape-like film are joined to electrodes of a semiconductor chip via bumps.

As a heat dissipation structure in a TAB type semiconductor integrated circuit device, for example, an elastic body is interposed between the device side substrate on which the TAB type semiconductor integrated circuit device is mounted and the semiconductor chip, and the elastic force of the elastic body is used to dissipate heat. There is a structure in which a semiconductor chip is pressed against a separately provided heat sink.

[0004] Other heat dissipation structures include, for example, "TA
"Introduction to Technology B" on pages 259 and 260, and this document describes a TAB type semiconductor integrated circuit device technology provided with heat dissipation fins.

[0005]

However, in recent years, the amount of heat generated from semiconductor chips has tended to increase as elements have become more integrated, semiconductor chips have become larger, and circuit operations have become faster. Also in semiconductor integrated circuit devices of this type, how to properly dissipate heat generated in a semiconductor chip is becoming an important issue.

The present invention has been made in view of the above-mentioned problems, and its object is to provide a technique that can improve the heat dissipation of a TAB type semiconductor integrated circuit device.

The above and other objects and novel features of the present invention will become apparent from the description of the specification and the accompanying drawings.

[0008]

[Means for Solving the Problems] Among the inventions disclosed in this application, a brief overview of typical inventions will be as follows.
It is as follows.

That is, the invention according to claim 1 is a semiconductor integrated circuit device in which a semiconductor chip is bonded via bumps to the ends of leads formed on a tape carrier, wherein the main surface or It has a semiconductor integrated circuit device structure in which a heat dissipation means is bonded to the back surface.

0010

According to the invention as set forth in claim 1 above, since the heat dissipation means itself is bonded to the back surface or main surface of the semiconductor chip, the thermal resistance of the heat dissipation path can be made extremely small.

[0011]

[Embodiment] FIG. 1 is a sectional view of a main part of a semiconductor integrated circuit device which is an embodiment of the present invention, FIG. 2 is an explanatory diagram for explaining a method of manufacturing the semiconductor integrated circuit device of FIG. 1, and FIG. 4 is an explanatory diagram for explaining a modification of the method for manufacturing this semiconductor integrated circuit device.

The semiconductor integrated circuit device of this embodiment is a TAB type semiconductor integrated circuit device 1, as shown in FIG.

The tips of the leads 3 formed on the tape carrier 2 are electrically connected to a semiconductor integrated circuit (not shown) formed on the main surface side of the semiconductor chip 4 via bumps 5 .

The tape carrier 2 is made of, for example, polyimide resin, glass epoxy resin or bismaleimide triazine (BT) resin. The lead 3 is made of copper (C
u), and its surface is coated with tin (Sn) or gold (
Au) plating treatment etc. are applied. The semiconductor chip 4 is made of silicon (Si), for example, and has C on its main surface.
Semiconductor integrated circuits such as MOS (complementary MOS) gate arrays are formed. Further, the semiconductor chip 4 is covered with a sealing part 6 made of a predetermined resin, and is protected from the external environment. The bumps 5 are made of, for example, Au, and are formed in plural on the outer periphery of the semiconductor chip 4 on the main surface side.

By the way, in this embodiment, a radiation fin 7 is bonded to the back side of the semiconductor chip 4 by an adhesive layer 8 made of, for example, silicone rubber. The radiation fins 7 are made of a material with high thermal conductivity, such as aluminum (Al).

That is, in the TAB type semiconductor integrated circuit device 1 of this embodiment, since the heat dissipation fin 7 itself is bonded to the back surface of the semiconductor chip 4, the thermal resistance of the heat dissipation path can be extremely reduced, and the heat dissipation performance is improved. It has a structure that allows for improved performance.

Furthermore, in the TAB type semiconductor integrated circuit device 1 of this embodiment, the heat dissipation fin 7 is connected to the semiconductor chip 4.
Since it also serves as a sealing part on the back side of the semiconductor integrated circuit device 1, it is possible to reduce the thickness of the semiconductor integrated circuit device 1, and the semiconductor integrated circuit device 1 has a structure that is relatively easy to manufacture.

Note that the adhesive layer 8 is not limited to silicone rubber, and can be modified in various ways. For example, the adhesive layer 8 can be made of silicone rubber, which has high thermal conductivity, has a coefficient of thermal expansion close to that of a semiconductor chip, or is suitable for use with elements formed on a semiconductor chip. It is preferable to use a material that has characteristics such as not causing any adverse effects.

To manufacture such a TAB type semiconductor integrated circuit device 1, for example, the following steps are performed.

That is, as shown in FIG. 2, first, after the tips of the leads 3 formed on the tape carrier 2 and the bumps 5 of the semiconductor chip 4 are connected by a predetermined gang bonding method or the like, for example, the heat dissipating fins 7 are connected. An adhesive layer 8 made of silicone rubber or the like is formed on the back side of the substrate. In addition,
As a method of connecting the tips of the leads 3 and the bumps 5 of the semiconductor chip 4, for example, a single bonding method may be used. Further, the adhesive layer 8 may be formed on the back surface of the semiconductor chip 4.

Subsequently, after the back surface of the semiconductor chip 4 and the adhesive layer 8 on the heat dissipation fin 7 are opposed to each other and aligned, the semiconductor chip 4 is moved downward in the figure and the back surface of the semiconductor chip 4 and the adhesive layer 8 on the heat dissipation fin 7 are aligned. The back surface of the radiation fin 7 is joined.

Thereafter, the semiconductor chip 4 is coated with potting resin to form the sealing portion 6 shown in FIG. 1, and the TAB type semiconductor integrated circuit device 1 is manufactured.

Further, as a method of manufacturing the TAB type semiconductor integrated circuit device 1 of this embodiment, the following may be used, for example.

That is, as shown in FIG. 3, the tips of the leads 3 formed on the tape carrier 2 and the semiconductor chip 4
After connecting the semiconductor chip 4 to the bumps 5, the semiconductor chip 4 is held with a predetermined minute gap between the back surface of the semiconductor chip 4 and the back surface of the radiation fin 7.

Subsequently, as shown in FIG. 4, the semiconductor chip 4 is covered with a potting resin to form a sealing part 6, and the back surface of the semiconductor chip 4 and the back surface of the radiation fin 7 are bonded together using the TAB method. A semiconductor integrated circuit device 1 is manufactured. In this case, since the step of forming the adhesive layer 8 (see FIGS. 1 and 2) can be omitted, the manufacturing time can be shortened.

As described above, according to this embodiment, the following effects can be obtained.

(1). By bonding the heat dissipation fins 7 to the back surface of the semiconductor chip 4 which is bonded to the tips of the leads 3 formed on the tape carrier 2 via the bumps 5, the thermal resistance of the heat dissipation path can be made extremely small, resulting in improved heat dissipation performance. It becomes possible to improve the

(2). By bonding the heat dissipation fin 7 to the back surface of the semiconductor chip 4, the heat dissipation fin 7 also serves as a sealing part on the back surface side of the semiconductor chip 4. Therefore, the TAB type semiconductor integrated circuit device 1 having the heat dissipation fin 7 can be It becomes possible to make it thinner.

(3). By joining the heat dissipation fins 7 to the back surface of the semiconductor chip 4, the heat dissipation fins 7 also serve as a sealing part on the back surface side of the semiconductor chip 4, making it easier to cover the semiconductor chip 4 with the sealing resin and dissipating heat. It becomes possible to manufacture the TAB type semiconductor integrated circuit device 1 having fins relatively easily.

FIG. 5 is a sectional view of a main part of a semiconductor integrated circuit device according to another embodiment of the present invention, FIG. 6 is an explanatory diagram for explaining a method of manufacturing the semiconductor integrated circuit device of FIG. 5, and FIG. 8 is an explanatory diagram for explaining a modification of the method for manufacturing this semiconductor integrated circuit device.

In this embodiment, as shown in FIG.
The legs 7a of the radiation fins 7 are bonded to the main surface of the semiconductor chip 4 by an adhesive layer 8 made of, for example, silicone rubber. That is, in this embodiment, the structure is such that heat generated on the main surface side of the semiconductor chip 4 can be dissipated from the main surface side. Therefore, the structure is such that heat dissipation can be improved compared to the first embodiment, and the operational reliability of the semiconductor integrated circuit can be improved.

To manufacture the TAB type semiconductor integrated circuit device 1 of this embodiment, for example, the following steps are performed.

That is, as shown in FIG. 6, first, after connecting the tips of the leads 3 of the tape carrier 2 and the bumps 5 of the semiconductor chip 4, a material made of silicone rubber or the like is attached to the main surface side of the semiconductor chip 4. An adhesive layer 8 is formed. Note that the adhesive layer 8 may be formed on the lower surface of the leg portion 7a of the radiation fin 7.

Subsequently, after the lower surface of the leg portion 7a of the heat dissipation fin 7 and the adhesive layer 8 on the main surface side of the semiconductor chip 4 are opposed to each other and aligned, the heat dissipation fin 7 is moved downward in the figure. The leg portions 7a of the radiation fins 7 and the main surface of the semiconductor chip 4 are joined.

Thereafter, as shown in FIG. 5, the semiconductor chip 4 is covered with a potting resin to form a sealing portion 6, and a TAB type semiconductor integrated circuit device 1 is manufactured.

Further, as a method of manufacturing the semiconductor integrated circuit device 1 of this embodiment, the following may be used, for example.

That is, as shown in FIG. 7, the tips of the leads 3 formed on the tape carrier 2 and the semiconductor chip 4
After connecting the heat dissipating fins 7 to the bumps 5, the heat dissipating fins 7 are moved downward in the figure and held with a predetermined minute gap between the lower surface of the leg portions 7a and the main surface of the semiconductor chip 4.

Subsequently, as shown in FIG. 8, the semiconductor chip 4 is coated with potting resin to form a sealing portion 6, and the main surface of the semiconductor chip 4 and the leg portions 7a of the radiation fins 7 are bonded. TAB type semiconductor integrated circuit device 1
Manufacture. In this case, since the step of forming the adhesive layer 8 can be omitted, the manufacturing time can be shortened.

As described above, according to this embodiment, by bonding the radiation fins 7 to the main surface side of the semiconductor chip 4, heat generated on the main surface side of the semiconductor chip 4 can be dissipated from the main surface side. Therefore, it is possible to improve heat dissipation compared to the first embodiment.

Although the invention made by the present inventor has been specifically explained based on examples, the present invention is not limited to the above-mentioned examples, and can be modified in various ways without departing from the gist thereof. Needless to say.

For example, in the first embodiment, the case where the back surface of the semiconductor chip and the heat dissipation fin are simply bonded using an adhesive layer is described, but the present invention is not limited to this. For example, as shown in FIG. , a concave groove 9 large enough to accommodate the semiconductor chip 4 is formed on the back side of the heat dissipation fin 7;
The semiconductor chip 4 may be embedded in the groove 9, and the semiconductor chip 4 and the radiation fin 7 may be bonded together using the adhesive layer 8. In this case, heat can also be dissipated from the side surfaces of the semiconductor chip 4, making it possible to further improve heat dissipation performance. Further, since the semiconductor chip 4 is buried in the groove 9, the TAB type semiconductor integrated circuit device 1 having the radiation fins 7 can be made thinner. Furthermore, since it is only necessary to apply the sealing resin to the main surface side of the semiconductor chip 4, it is possible to easily form the sealing resin.

Furthermore, the shape of the radiation fin leg portion in the second embodiment is not limited to the shape shown in FIG. 5, and can be modified in various ways, for example, as shown in FIG.
The connecting shaft portion 7c between the leg portion 7a and the wing portion 7b of the radiation fin 7 may be made wider. In this case, since the cross-sectional area of the heat radiation path increases, it becomes possible to further improve heat radiation performance.

Furthermore, in each of the above embodiments, a case has been described in which the present invention is applied to a TAB type semiconductor integrated circuit device in which a CMOS is formed on a semiconductor chip, but the present invention is not limited to this and various modifications can be made. For example, the present invention can be applied to a TAB type semiconductor integrated circuit device in which a bipolar transistor or a bipolar transistor/CMOS hybrid circuit element is formed on a semiconductor chip.

Furthermore, in each of the above embodiments, a case has been described in which the present invention is applied to a TAB type semiconductor integrated circuit device in which a gate array is formed on a semiconductor chip, but the present invention is not limited to this and various modifications can be made. It is possible and
For example, a semiconductor chip may contain other logic circuits or DRAM (
Dynamic RAM) and SRAM (Static
It is also possible to apply the present invention to a TAB type semiconductor integrated circuit device in which a semiconductor memory circuit such as RAM) is formed.

[0045]

[Effects of the Invention] Among the inventions disclosed in this application, the effects obtained by the typical inventions are briefly explained as follows.
It is as follows.

That is, according to the invention described in claim 1,
By bonding the heat dissipation means itself to the back surface or main surface of the semiconductor chip, the thermal resistance of the heat dissipation path can be made extremely small, making it possible to improve the heat dissipation performance of TAB type semiconductor integrated circuit devices. .

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a main part of a semiconductor integrated circuit device that is an embodiment of the present invention.

FIG. 2 is an explanatory diagram for explaining a method of manufacturing the semiconductor integrated circuit device of FIG. 1;

FIG. 3 is an explanatory diagram for explaining a method of manufacturing a semiconductor integrated circuit device according to another embodiment of the present invention.

FIG. 4 is an explanatory diagram for explaining a method of manufacturing a semiconductor integrated circuit device according to another embodiment of the present invention.

FIG. 5 is a sectional view of a main part of a semiconductor integrated circuit device according to another embodiment of the present invention.

6 is an explanatory diagram for explaining a method of manufacturing the semiconductor integrated circuit device of FIG. 5; FIG.

FIG. 7 is an explanatory diagram for explaining a method of manufacturing a semiconductor integrated circuit device according to another embodiment of the present invention.

FIG. 8 is an explanatory diagram for explaining a method of manufacturing a semiconductor integrated circuit device according to another embodiment of the present invention.

FIG. 9 is a sectional view of a main part of a semiconductor integrated circuit device according to another embodiment of the present invention.

FIG. 10 is a sectional view of a main part of a semiconductor integrated circuit device according to another embodiment of the present invention.

[Explanation of symbols]

1 Semiconductor integrated circuit device 2 Tape carrier 3 Lead 4 Semiconductor chip 5 Bump 6 Sealing part 7 Heat dissipation fins 7a Legs 7b Habe 7c　Joint shaft part 8 Adhesive layer 9 groove

Claims (3)

[Claims] 1. A semiconductor integrated circuit device comprising a semiconductor chip bonded to the ends of leads formed on a tape carrier via bumps, wherein a heat dissipation means is bonded to the main surface or back surface of the semiconductor chip. A semiconductor integrated circuit device characterized by: 2. The semiconductor integrated circuit device according to claim 1, wherein the heat radiation means is a radiation fin. 3. When manufacturing the semiconductor integrated circuit device according to claim 2, the main surface or back surface of the semiconductor chip bonded to the ends of the leads of the tape carrier via bumps and the radiation fin are bonded with an adhesive. After that, the semiconductor chip is sealed with a sealing resin.