JPS61166051A - Resin seal type semiconductor device - Google Patents

Resin seal type semiconductor device

Info

Publication number
JPS61166051A
JPS61166051A JP646685A JP646685A JPS61166051A JP S61166051 A JPS61166051 A JP S61166051A JP 646685 A JP646685 A JP 646685A JP 646685 A JP646685 A JP 646685A JP S61166051 A JPS61166051 A JP S61166051A
Authority
JP
Japan
Prior art keywords
chip
resin
semiconductor device
sealing
die pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP646685A
Other languages
Japanese (ja)
Inventor
Shinji Mitsui
三井　真司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP646685A priority Critical patent/JPS61166051A/en
Publication of JPS61166051A publication Critical patent/JPS61166051A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve heat-dissipating characteristics by bonding radiator plates having thermal conductivity higher than a sealing resin with the main surface of a chip and the back of a die pad and sealing these radiator plates with a molding resin. CONSTITUTION:A chip 1 is fixed to a die pad 2 through an Au-Si eutectic method or a glueing method using silver paste, and external leads 3 and the chip 1 are connected by wires 4 consisting of Au or Al. A radiator plate 7 employing A (0.57cal/cm.sec. deg.C) or Cu (0.94cal/cm.sec. deg.C) or the like having thermal conductivity larger than that (0.0015-0.0050cal/cm.sec. deg.C) of a molding resin 5 is bonded onto the main surface of the chip by using adhesives 6. A radiator plate 8 on the die-pad back side is disposed into a sealing mold on a resin seal, and brought into contact directly with the die pad.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、放熱特性全改善した樹脂封止型半導体装置に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a resin-sealed semiconductor device with completely improved heat dissipation characteristics.

従来の技術 一般に、樹脂封止型半導体装置は、第２図に示すような
構造になっている。即ち、半導体素子（チップ）１を半
導体素子載置板（ダイパッド）２に固着し、チップ上の
電極と外部リード３を細線（ムＵあるいはムｌ）４で接
続した後、成形用樹脂６によって封止して得られる。2. Description of the Related Art Generally, a resin-sealed semiconductor device has a structure as shown in FIG. That is, after fixing a semiconductor element (chip) 1 to a semiconductor element mounting plate (die pad) 2 and connecting the electrodes on the chip and external leads 3 with thin wires (U or Ml) 4, the molding resin 6 is used to Obtained by sealing.

発明が解決しようとする問題点 しかし、かかる構造では、チップ主表面に熱伝導性の低
い封止樹脂が直接接触するため、チップの発熱は外部へ
効率よく放散できない。この結果、動作時のチップの温
度は著しく上昇し、動作特性の劣下、さらに長期的な信
頼性も低下するなどの問題点があった。Problems to be Solved by the Invention However, in such a structure, the heat generated by the chip cannot be efficiently dissipated to the outside because the sealing resin with low thermal conductivity is in direct contact with the main surface of the chip. As a result, the temperature of the chip increases significantly during operation, resulting in deterioration of operating characteristics and long-term reliability.

問題点を解決するための手段 本発明では、上述問題点を解決すへく、封止樹脂よりも
熱伝導度の高い放熱板をチップの主表面とダイパッドの
裏面に接着し、これらを成形用樹脂で封止して樹脂封止
型半導体装置を実現する。Means for Solving the Problems In the present invention, in order to solve the above-mentioned problems, a heat sink having higher thermal conductivity than the sealing resin is bonded to the main surface of the chip and the back surface of the die pad, and these are used for molding. A resin-sealed semiconductor device is realized by sealing with resin.

作用 この様にして得られた樹脂封止型半導体装置では、チッ
プの発熱のほとんどが、急速にチップ主表面上の放熱板
と、ダイパッドに接着された放熱板に伝播し、実効的な
チップの発熱面積は、２枚の放熱板の面積とほぼ等価と
なる。この結果、放熱特性は著しく向上する。Function: In the resin-sealed semiconductor device obtained in this way, most of the heat generated by the chip is rapidly propagated to the heat sink on the main surface of the chip and the heat sink bonded to the die pad, resulting in an effective chip failure. The heat generating area is approximately equivalent to the area of two heat sinks. As a result, the heat dissipation characteristics are significantly improved.

実施例 以下に、本発明の実施例を図を用いて説明する。Example Embodiments of the present invention will be described below with reference to the drawings.

第１図は、本発明の断面図である。図示するように、チ
ップ１をダイパッド２に、ムｕ−５ｉ共晶法か銀ペース
トを用いたブルーイング法などで固着し、外部リード３
とチップ１はムＵまたはムＥからなるワイヤー４で接続
する。そして、チップ主表面上に接着剤６を用いて、成
形用樹脂６の熱伝導度（０、００１５〜０．００６００
’ｌＬｌ／ＣｒｌＬ−ｇ３ｇ　・℃）よりも大きな熱伝
導度を有するムＡ（０，５７０ａ４／Ｃｍ　・ｓｅｅ　
・’Ｃ）あるいは、Ｃｕ　（０，９４ｃａｌ／ｃｍ　−
５ｅｃ　’Ｃ）などを用いた放熱板７を接着する。さら
に、ダイバッド裏面側の放熱板８は、樹脂封止時に封止
金型内に配設してダイパッドと直接接触する構造とした
。なお、放熱板の接着材としては、ポリイミド樹脂やシ
リコーン樹脂を主成分とするものが好ましく、接着層の
厚みは、熱伝導の面から極力薄し、封止時に必要な最小
限度の接着力が確医される程度でよい。このようにして
製作した樹脂封止型半導体装置の熱抵抗は、従来の樹脂
封止型半導体装置（第２図参照）に比べて３分の１程度
に減少できる。FIG. 1 is a cross-sectional view of the present invention. As shown in the figure, the chip 1 is fixed to the die pad 2 by the Mu-5i eutectic method or the bluing method using silver paste, and the external leads 3
and chip 1 are connected by a wire 4 consisting of MU or MUE. Then, using the adhesive 6 on the main surface of the chip, the thermal conductivity of the molding resin 6 (0.0015 to 0.00600
MuA (0,570a4/Cm ・see
・'C) Or Cu (0.94 cal/cm −
5ec'C) or the like is adhered. Furthermore, the heat dissipation plate 8 on the back side of the die pad was arranged in a sealing mold during resin sealing so as to be in direct contact with the die pad. The adhesive for the heat dissipation plate is preferably one whose main component is polyimide resin or silicone resin.The thickness of the adhesive layer should be as thin as possible in terms of heat conduction, and the minimum adhesive force required for sealing should be kept. It is enough to be confirmed by a doctor. The thermal resistance of the resin-sealed semiconductor device manufactured in this manner can be reduced to about one-third of that of a conventional resin-sealed semiconductor device (see FIG. 2).

発明の効果 本発明の樹脂封止型半導体装置では、動作時のチップの
発熱がチップ主表面側の放熱板とダイノくラド裏面側の
放熱板に急速に伝播されるため、実質的な発熱部は放熱
板となって放熱性の高い樹脂封止型半導体装置が実現さ
れる。さらに、チップ主表面に接着剤としてポリイミド
樹脂やシリコーン樹脂を用いるため、耐湿性の向上と応
力緩和の二次効果も得ることができる。Effects of the Invention In the resin-sealed semiconductor device of the present invention, the heat generated by the chip during operation is rapidly propagated to the heat sink on the main surface of the chip and the heat sink on the rear surface of the die. serves as a heat dissipation plate, realizing a resin-sealed semiconductor device with high heat dissipation. Furthermore, since polyimide resin or silicone resin is used as an adhesive on the main surface of the chip, secondary effects of improved moisture resistance and stress relaxation can also be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本発明を用いた実施例の断面図、第２図は従
来の樹脂封止型半導体装置の断面図である。 １・・・・・・半導体素子、２・・・・・・半導体素子
載置部、３・・・・・・外部リード、４・・・・・・ワ
イヤー、６・・・・・・成形用樹脂、６・・・・・・接
着剤、７・・・・・・チップ側放熱板、８・・・・・・
ダイパッド側放熱板。FIG. 1 is a sectional view of an embodiment using the present invention, and FIG. 2 is a sectional view of a conventional resin-sealed semiconductor device. DESCRIPTION OF SYMBOLS 1... Semiconductor element, 2... Semiconductor element mounting part, 3... External lead, 4... Wire, 6... Molding resin, 6...adhesive, 7...chip side heat sink, 8...
Die pad side heat sink.

Claims (1)

【特許請求の範囲】[Claims] 封止樹脂よりも熱伝導性の高い材料からなる放熱板が半
導体素子主表面と半導体素子載置部裏面とに接着あるい
は接触されるとともに、これらが成形用樹脂で一体的に
封止されていることを特徴とする樹脂封止型半導体装置
。A heat sink made of a material with higher thermal conductivity than the sealing resin is adhered to or in contact with the main surface of the semiconductor element and the back surface of the semiconductor element mounting part, and these are integrally sealed with a molding resin. A resin-sealed semiconductor device characterized by:
JP646685A 1985-01-17 1985-01-17 Resin seal type semiconductor device Pending JPS61166051A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP646685A JPS61166051A (en) 1985-01-17 1985-01-17 Resin seal type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP646685A JPS61166051A (en) 1985-01-17 1985-01-17 Resin seal type semiconductor device

Publications (1)

Publication Number Publication Date
JPS61166051A true JPS61166051A (en) 1986-07-26

Family

ID=11639225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP646685A Pending JPS61166051A (en) 1985-01-17 1985-01-17 Resin seal type semiconductor device

Country Status (1)

Country Link
JP (1) JPS61166051A (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0488783A2 (en) * 1990-11-30 1992-06-03 Shinko Electric Industries Co. Ltd. Lead frame for semiconductor device comprising a heat sink
EP0528291A2 (en) * 1991-08-08 1993-02-24 Sumitomo Electric Industries, Limited Semiconductor chip module and method for manufacturing the same
US5365107A (en) * 1992-06-04 1994-11-15 Shinko Electric Industries, Co., Ltd. Semiconductor device having tab tape
US5489801A (en) * 1993-11-03 1996-02-06 Intel Corporation Quad flat package heat slug composition
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5616957A (en) * 1994-05-19 1997-04-01 Nec Corporation Plastic package type semiconductor device
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5686361A (en) * 1992-06-03 1997-11-11 Seiko Epson Corporation Method for manufacturing a semiconductor device having a heat radiator
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5894166A (en) * 1997-09-17 1999-04-13 Northern Telecom Limited Chip mounting scheme
KR100251889B1 (en) * 1997-05-13 2000-04-15 마이클 디. 오브라이언 Semiconductor package
GB2344934A (en) * 1995-10-24 2000-06-21 Altera Corp Integrated circuit package
JP2002329828A (en) * 2001-04-27 2002-11-15 Denso Corp Semiconductor device
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
US6946730B2 (en) 2001-04-25 2005-09-20 Denso Corporation Semiconductor device having heat conducting plate
US20110221048A1 (en) * 2010-03-10 2011-09-15 Ken Beng Lim Package Having Spaced Apart Heat Sink

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040549U (en) * 1973-08-07 1975-04-24
JPS572654B2 (en) * 1973-09-18 1982-01-18

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040549U (en) * 1973-08-07 1975-04-24
JPS572654B2 (en) * 1973-09-18 1982-01-18

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0488783A2 (en) * 1990-11-30 1992-06-03 Shinko Electric Industries Co. Ltd. Lead frame for semiconductor device comprising a heat sink
EP0528291A2 (en) * 1991-08-08 1993-02-24 Sumitomo Electric Industries, Limited Semiconductor chip module and method for manufacturing the same
EP0528291A3 (en) * 1991-08-08 1994-05-11 Sumitomo Electric Industries Semiconductor chip module and method for manufacturing the same
US5525835A (en) * 1991-08-08 1996-06-11 Sumitomo Electric Industries, Ltd. Semiconductor chip module having an electrically insulative thermally conductive thermal dissipator directly in contact with the semiconductor element
US5686361A (en) * 1992-06-03 1997-11-11 Seiko Epson Corporation Method for manufacturing a semiconductor device having a heat radiator
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5653891A (en) * 1992-06-03 1997-08-05 Seiko Epson Corporation Method of producing a semiconductor device with a heat sink
US5365107A (en) * 1992-06-04 1994-11-15 Shinko Electric Industries, Co., Ltd. Semiconductor device having tab tape
US5489801A (en) * 1993-11-03 1996-02-06 Intel Corporation Quad flat package heat slug composition
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5616957A (en) * 1994-05-19 1997-04-01 Nec Corporation Plastic package type semiconductor device
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
GB2344934A (en) * 1995-10-24 2000-06-21 Altera Corp Integrated circuit package
KR100251889B1 (en) * 1997-05-13 2000-04-15 마이클 디. 오브라이언 Semiconductor package
US5894166A (en) * 1997-09-17 1999-04-13 Northern Telecom Limited Chip mounting scheme
US6967404B2 (en) 1999-11-24 2005-11-22 Denso Corporation Semiconductor device having radiation structure
US6998707B2 (en) 1999-11-24 2006-02-14 Denso Corporation Semiconductor device having radiation structure
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
US6798062B2 (en) 1999-11-24 2004-09-28 Denso Corporation Semiconductor device having radiation structure
US6891265B2 (en) 1999-11-24 2005-05-10 Denso Corporation Semiconductor device having radiation structure
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6960825B2 (en) 1999-11-24 2005-11-01 Denso Corporation Semiconductor device having radiation structure
US6992383B2 (en) 1999-11-24 2006-01-31 Denso Corporation Semiconductor device having radiation structure
US6963133B2 (en) 2001-04-25 2005-11-08 Denso Corporation Semiconductor device and method for manufacturing semiconductor device
US6946730B2 (en) 2001-04-25 2005-09-20 Denso Corporation Semiconductor device having heat conducting plate
JP2002329828A (en) * 2001-04-27 2002-11-15 Denso Corp Semiconductor device
JP4631205B2 (en) * 2001-04-27 2011-02-16 株式会社デンソー Semiconductor device and manufacturing method thereof
US20110221048A1 (en) * 2010-03-10 2011-09-15 Ken Beng Lim Package Having Spaced Apart Heat Sink
US9054077B2 (en) * 2010-03-10 2015-06-09 Altera Corporation Package having spaced apart heat sink

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