JPH06326230A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor deviceInfo
- Publication number
- JPH06326230A JPH06326230A JP5109122A JP10912293A JPH06326230A JP H06326230 A JPH06326230 A JP H06326230A JP 5109122 A JP5109122 A JP 5109122A JP 10912293 A JP10912293 A JP 10912293A JP H06326230 A JPH06326230 A JP H06326230A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resin
- heat
- sealed semiconductor
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は高い放熱性を必要とする
樹脂封止型半導体装置の実装構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure for a resin-sealed semiconductor device which requires high heat dissipation.
【０００２】[0002]
【従来の技術】半導体チップの微細化により集積度が向
上し高速化するにつれ消費電力も増大し、発熱量が増加
する。チップ温度の上昇は、半導体装置の動作スピ−ド
の低下や信頼性を損なう原因にもなるため、効率のよい
冷却を行う必要がある。2. Description of the Related Art As semiconductor chips are miniaturized and the degree of integration is improved and the speed is increased, the power consumption is increased and the amount of heat generation is increased. Since the rise in the chip temperature also causes a decrease in the operating speed of the semiconductor device and a loss of reliability, it is necessary to perform efficient cooling.
【０００３】従来最も一般的に用いられている樹脂封止
型半導体装置において、放熱性を得る構造の一例を図２
より説明する。放熱板２１はリ−ドフレ−ムのインナ−
リ−ド２２に絶縁テ−プ２３を介して接着されており、
半導体チップ２４は放熱板２１上に載置された後、イン
ナ−リ−ド２２とボンディングワイヤ２５により接続さ
れ、樹脂２６により封止される。このような構造の場
合、半導体チップ２４からの熱は放熱板２１及びインナ
−リ−ド２２を通じアウタ−リ−ド２７から放出され
る。放熱板２１はインナ−リ−ド２２に熱圧着により接
着されるが、その際に接着テ−プ２３が熱により軟化す
るため、ボンディングエリアを汚染する可能性がある。
また、キュアリング時においても同様の可能性がある。FIG. 2 shows an example of a structure for obtaining heat dissipation in the most commonly used resin-sealed semiconductor device.
More will be described. The heat sink 21 is an inner lead frame.
It is adhered to the lead 22 via an insulating tape 23,
After the semiconductor chip 24 is placed on the heat dissipation plate 21, the semiconductor chip 24 is connected to the inner lead 22 by the bonding wire 25 and is sealed by the resin 26. In the case of such a structure, the heat from the semiconductor chip 24 is radiated from the outer lead 27 through the heat dissipation plate 21 and the inner lead 22. The heat radiating plate 21 is bonded to the inner lead 22 by thermocompression bonding, but at that time, the bonding tape 23 is softened by heat, which may contaminate the bonding area.
Moreover, there is a similar possibility at the time of curing.
【０００４】さらに、このような構造であると、従来の
１〜１．５ｗ程度の消費電力である場合には有効である
が、より高い消費電力の半導体チップ２４を搭載する場
合には適用が難しい。高消費電力になるにつれ、放熱特
性を高めるには放熱板２１のサイズを拡大しなければな
らない。ところで、放熱板２１を内部に有する樹脂封止
型半導体装置の特性として重要なことに耐湿性がある。
放熱板２１と樹脂２６との密着性が悪いため、樹脂自身
が透過した水分及びリ−ドフレ−ムなどの素体の界面か
ら侵入した水分が、放熱板２１と樹脂２６との界面に集
まり、パッケ−ジクラックを引き起こす原因となる。従
って、放熱板２１のサイズの拡大はパッケ−ジクラック
発生に対して不利といえる。Further, such a structure is effective when the conventional power consumption is about 1 to 1.5 w, but it is applicable when the semiconductor chip 24 having higher power consumption is mounted. difficult. As the power consumption increases, the size of the heat dissipation plate 21 must be increased to improve the heat dissipation characteristics. By the way, moisture resistance is an important characteristic of the resin-sealed semiconductor device having the heat dissipation plate 21 inside.
Since the adhesion between the heat sink 21 and the resin 26 is poor, the water permeated by the resin itself and the water entering from the interface of the element body such as the lead frame gather at the interface between the heat sink 21 and the resin 26. It may cause a package crack. Therefore, it can be said that increasing the size of the heat sink 21 is disadvantageous to the occurrence of package cracks.
【０００５】また、放熱板２１と絶縁テ−プ２３とは、
樹脂封止型半導体装置の内部にて封止樹脂体積の割合を
減少させており、樹脂封止型半導体装置の薄型化に対し
て不利な構造である。The heat radiating plate 21 and the insulating tape 23 are
The ratio of the volume of the sealing resin is reduced inside the resin-sealed semiconductor device, which is a disadvantageous structure for thinning the resin-sealed semiconductor device.
【０００６】[0006]
【発明が解決しようとする課題】上述のように、内部に
放熱板を有する樹脂封止型半導体装置は、放熱板をリ−
ドフレ−ムに接着するために用いる接着テ−プはボンデ
ィングエリアの汚染原因となることや、また放熱特性を
高めるために放熱板を無造作に拡大することはパッケ−
ジクラックの原因となること等問題がある。それ故に、
本発明は放熱特性を高めると共に、パッケ−ジクラック
を発生することのない樹脂封止型半導体装置を提供する
ことが目的である。As described above, in the resin-sealed semiconductor device having the heat sink inside, the heat sink is relieved.
The adhesive tape used to adhere to the dframe will cause contamination of the bonding area, and it is not possible to randomly expand the heat dissipation plate to improve heat dissipation characteristics.
There is a problem such as causing ji crack. Therefore,
It is an object of the present invention to provide a resin-encapsulated semiconductor device which improves heat dissipation characteristics and does not generate package cracks.
【０００７】[0007]
【課題を解決するための手段】本発明にかかる樹脂封止
型半導体装置は、リ−ドフレ−ムに設けられたアイラン
ド上に載置された半導体チップと、上記アイランドに連
続して成形された複数の吊りリ−ドと、上記複数の吊り
リ−ドと接着する放熱板とを有し、上記複数の吊りリ−
ドは各々樹脂封止型半導体装置の外部へ延在し、外部に
て放熱板と接着テ−プを介して接着する。A resin-encapsulated semiconductor device according to the present invention comprises a semiconductor chip mounted on an island provided on a lead frame, and a semiconductor chip continuously molded on the island. A plurality of suspension leads and a heat dissipation plate that adheres to the plurality of suspension leads, and the plurality of suspension leads
Each of the cords extends to the outside of the resin-encapsulated semiconductor device and is bonded to the radiator plate via an adhesive tape on the outside.
【０００８】[0008]
【作用】上記の構成によれば、半導体チップから発生す
る熱はアイランド及び吊りリ−ドを通じて外部に設けら
れた放熱板により放熱する。放熱板を外部に設けること
により放熱板のサイズを拡大したとしても、放熱板を原
因とするパッケ−ジクラックは発生しない。また、リ−
ドフレ−ムのインナ−リ−ドに接着する必要もなくボン
ディングエリアを汚染することもない。According to the above construction, the heat generated from the semiconductor chip is radiated by the heat radiating plate provided outside through the island and the suspension lead. Even if the size of the heat sink is increased by providing the heat sink outside, package cracks caused by the heat sink will not occur. Also,
It does not need to adhere to the inner frame of the dframe and does not contaminate the bonding area.
【０００９】[0009]
【実施例】以下、本発明による樹脂封止型半導体装置の
一実施例を図１を参照して説明する。図１（ａ）は樹脂
封止型半導体装置の表側を示す平面図である。樹脂封止
型半導体装置は樹脂１１により封止され、四辺各々にリ
−ド１２が設けられ、４つの吊りリ−ド１３が四辺の各
角部において外部に延在している。同図（ｂ）によれ
ば、樹脂封止型半導体装置の裏側では、吊りリ−ド１３
は適当な長さにカットされて裏面１４に曲げられてい
る。また同図（ｃ）によれば、半導体チップ１５が載置
されるアイランド１６と吊りリ−ド１３とが連続してい
ることは明らかである。放熱板１７は、例えば半導体装
置裏面１４とほぼ同じ大きさに形成され、接着テ−プ
（両面粘着）１８を介して吊りリ−ド１３に熱圧着され
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the resin-sealed semiconductor device according to the present invention will be described below with reference to FIG. FIG. 1A is a plan view showing the front side of the resin-sealed semiconductor device. The resin-sealed semiconductor device is sealed with resin 11, leads 12 are provided on each of the four sides, and four suspension leads 13 extend to the outside at each corner of the four sides. According to FIG. 2B, the suspension lead 13 is provided on the back side of the resin-sealed semiconductor device.
Is cut to an appropriate length and bent to the back surface 14. Further, according to FIG. 2C, it is clear that the island 16 on which the semiconductor chip 15 is mounted and the suspension lead 13 are continuous. The heat radiating plate 17 is formed, for example, in substantially the same size as the back surface 14 of the semiconductor device, and is thermocompression bonded to the suspension lead 13 via an adhesive tape (double-sided adhesive) 18.
【００１０】このような構造によれば、半導体チップ１
５から発生する熱は、アイランド１６及び吊りリ−ド１
３を通じて外部に設けられた放熱板１７へ伝わり放熱板
１７から放出される。外部に放熱板１７が設けられるこ
とは、放熱板１７によるパッケ−ジクラックは発生しな
いため、放熱板１７を拡大することにより放熱特性を高
めることができる。According to such a structure, the semiconductor chip 1
The heat generated from the island 5 and the suspension lead 1
3 is transmitted to the heat radiating plate 17 provided outside and is emitted from the heat radiating plate 17. Since the heat radiation plate 17 is provided outside, package cracks due to the heat radiation plate 17 do not occur. Therefore, the heat radiation characteristics can be improved by enlarging the heat radiation plate 17.
【００１１】また、放熱板１７をリ−ドフレ−ムのイン
ナ−リ−ド（図示せず）に接着する必要がないため、ボ
ンディングエリアを汚染することもない。従って、ボン
ディングワイヤ（図示せず）の接合不良や表面的には接
合していても樹脂封止工程の際に取れることもなく、高
い信頼性の樹脂封止型半導体装置を提供することができ
る。Further, since it is not necessary to bond the heat radiation plate 17 to the inner lead (not shown) of the lead frame, the bonding area is not contaminated. Therefore, it is possible to provide a highly reliable resin-encapsulated semiconductor device without a bonding failure of the bonding wire (not shown) or even if it is surface-bonded, it is not removed during the resin encapsulation process. .
【００１２】[0012]
【発明の効果】本発明によれば、樹脂封止型半導体装置
の外部に放熱板を設けることにより、ボンディングエリ
アを汚染することなくかつパッケ−ジクラックの発生も
ない。また、放熱板の拡大は容易であるから、消費電力
の増大に対応し放熱特性を向上することできる。更に、
放熱板が接着される吊りリ−ドは、従来からアイランド
を支えるためにリ−ドフレ−ムに設けられているもので
あるから、設計を大幅に変える必要もなく簡易に提供す
ることができる。According to the present invention, the heat radiation plate is provided outside the resin-encapsulated semiconductor device, so that the bonding area is not polluted and no package crack is generated. Further, since the heat dissipation plate can be easily expanded, it is possible to improve heat dissipation characteristics in response to an increase in power consumption. Furthermore,
Since the suspension lead to which the heat dissipation plate is adhered is conventionally provided on the lead frame to support the island, it can be easily provided without requiring a significant change in design.
【図１】本発明による一実施例を示す平面図（ａ）、
（ａ）中の丸印部分の放熱板が接着されない状態の裏面
を示す平面図（ｂ）と（ａ）中のＸ−Ｘ´断面を示す断
面図（ｃ）である。FIG. 1 is a plan view (a) showing an embodiment according to the present invention,
It is the top view (b) which shows the back surface in the state where the heat sink of the circle part in (a) is not bonded, and the sectional view (c) which shows the XX 'cross section in (a).
【図２】従来の樹脂封止型半導体装置を示す断面図であ
る。FIG. 2 is a sectional view showing a conventional resin-sealed semiconductor device.
１１…樹脂、１２…リ−ド、１３…吊りリ−ド、１４…
裏面 １５…半導体チップ、１６…アイランド、１７…放熱
板、１８…接着テ−プ11 ... Resin, 12 ... Lead, 13 ... Suspension lead, 14 ...
Back surface 15 ... Semiconductor chip, 16 ... Island, 17 ... Heat sink, 18 ... Adhesive tape
Claims (1)
アイランドに載置された半導体チップと、上記アイラン
ドと連続して設けられた吊りリ−ドと、上記複数のリ−
ド及び上記吊りリ−ドとの各端部が露出するように上記
半導体チップを封止する樹脂層と、上記露出した吊りリ
−ドに設けられた放熱板とからなることを特徴とする樹
脂封止型半導体装置。1. A semiconductor chip mounted on an island of a lead frame having a plurality of leads, a suspension lead provided continuously with the island, and a plurality of the leads.
Resin including a resin layer that seals the semiconductor chip so that the ends of the cord and the suspension lead are exposed, and a heat dissipation plate provided on the exposed suspension lead. Sealed semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5109122A JPH06326230A (en) | 1993-05-11 | 1993-05-11 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5109122A JPH06326230A (en) | 1993-05-11 | 1993-05-11 | Resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06326230A true JPH06326230A (en) | 1994-11-25 |
Family
ID=14502122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5109122A Pending JPH06326230A (en) | 1993-05-11 | 1993-05-11 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06326230A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2736467A1 (en) * | 1995-07-07 | 1997-01-10 | Samsung Aerospace Ind | SEMICONDUCTOR DEVICE DISSIPATING HEAT |
| KR19980044247A (en) * | 1996-12-06 | 1998-09-05 | 황인길 | Molding method of semiconductor package |
| KR100373566B1 (en) * | 1999-02-04 | 2003-02-25 | 닛뽕덴끼 가부시끼가이샤 | Resin-sealed semiconductor device having island for mounting semiconductor element coupled to heat spreader |
-
1993
- 1993-05-11 JP JP5109122A patent/JPH06326230A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2736467A1 (en) * | 1995-07-07 | 1997-01-10 | Samsung Aerospace Ind | SEMICONDUCTOR DEVICE DISSIPATING HEAT |
| KR19980044247A (en) * | 1996-12-06 | 1998-09-05 | 황인길 | Molding method of semiconductor package |
| KR100373566B1 (en) * | 1999-02-04 | 2003-02-25 | 닛뽕덴끼 가부시끼가이샤 | Resin-sealed semiconductor device having island for mounting semiconductor element coupled to heat spreader |
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