JPH06241889A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH06241889A JPH06241889A JP5028700A JP2870093A JPH06241889A JP H06241889 A JPH06241889 A JP H06241889A JP 5028700 A JP5028700 A JP 5028700A JP 2870093 A JP2870093 A JP 2870093A JP H06241889 A JPH06241889 A JP H06241889A
- Authority
- JP
- Japan
- Prior art keywords
- sensor element
- bare chip
- stem
- infrared
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体センサー素子を
実装した半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounted with a semiconductor sensor element.
【０００２】[0002]
【従来の技術】従来、赤外線センサー素子等の半導体セ
ンサー素子と、その半導体センサー素子を駆動し、その
出力信号を処理する駆動用ＬＳＩのベアチップは個別に
パッケージングされ、プリント基板上に周辺の回路部品
と併せて実装されてセンサーモジュールとしての機能を
発揮していた。2. Description of the Related Art Conventionally, a semiconductor sensor element such as an infrared sensor element and a bare chip of a driving LSI for driving the semiconductor sensor element and processing an output signal thereof are individually packaged and a peripheral circuit is provided on a printed circuit board. It was mounted together with the parts and exerted its function as a sensor module.
【０００３】ここではまず、半導体センサー素子として
赤外線センサー素子を例にあげて、それを実装する従来
の半導体装置の一例について図２に基づき説明する。図
２（ａ）は、赤外線センサー素子の斜視図、図２（ｂ）
は、その断面図、図２（ｃ）は、その赤外線センサー素
子を実装した半導体装置１８の構造を示す断面図であ
る。First, an infrared sensor element will be taken as an example of the semiconductor sensor element, and an example of a conventional semiconductor device in which the infrared sensor element is mounted will be described with reference to FIG. 2 (a) is a perspective view of the infrared sensor element, FIG. 2 (b).
2C is a cross-sectional view thereof, and FIG. 2C is a cross-sectional view showing the structure of the semiconductor device 18 on which the infrared sensor element is mounted.
【０００４】図２（ｂ）で、１は赤外線センサー素子
で、サーミスタ２、熱絶縁膜３、シリコン基板４から構
成され、シリコン基板４にはサーミスタ２の熱が逃げに
くいように空隙部４ａが設けられている。赤外線センサ
ー素子１は、例えば、シリコン基板４上に熱絶縁膜３を
形成し、その上部にサーミスタ２を複数実装した後、シ
リコン基板４のサーミスタ２下方にあたる部分をエッチ
ング等にて部分的に触刻して空隙部４ａを形成して製造
される。In FIG. 2 (b), reference numeral 1 is an infrared sensor element, which is composed of a thermistor 2, a heat insulating film 3 and a silicon substrate 4, and a void portion 4a is formed in the silicon substrate 4 so that the heat of the thermistor 2 is hard to escape. It is provided. The infrared sensor element 1 has, for example, a thermal insulation film 3 formed on a silicon substrate 4 and a plurality of thermistors 2 mounted on the thermal insulation film 3, and then a portion of the silicon substrate 4 below the thermistor 2 is partially touched by etching or the like. It is manufactured by carving to form the void portion 4a.
【０００５】図２（ｃ）にて、５は赤外線センサー素子
１を実装する金属製のステム、６は端子、７はガラス等
の封着材、８はダイボンドペースト、９はボンディング
ワイヤー、１０は金属製のキャップ、１１はフィルタ、
１２は接着剤である。In FIG. 2C, 5 is a metal stem for mounting the infrared sensor element 1, 6 is a terminal, 7 is a sealing material such as glass, 8 is a die bond paste, 9 is a bonding wire, and 10 is a bonding wire. Metal cap, 11 is a filter,
12 is an adhesive.
【０００６】ステム５は赤外線センサー素子１の実装基
台となるもので、その周縁にはキャップ１０との接合部
となるステム鍔部５ａが設けられている。端子６は外部
回路との接続用のもので、ガラス等の封着材７によりス
テム５にそれとは絶縁された状態で保持されている。１
０はキャップで下方の開口端周縁にはキャップ鍔部１０
ａが設けられている。The stem 5 serves as a mounting base of the infrared sensor element 1, and a stem collar portion 5a serving as a joint portion with the cap 10 is provided on the peripheral edge thereof. The terminal 6 is for connection with an external circuit, and is held by the sealing material 7 such as glass on the stem 5 in an insulated state from the stem 5. 1
Reference numeral 0 is a cap, and a cap collar portion 10 is provided on the lower edge of the opening end.
a is provided.
【０００７】組立はキャップ１０側とステム５側に分け
て行われ、最後に真空中、大気中または任意雰囲気中に
てキャップ１０とステム５をそれぞれの鍔部を重ね合わ
せ、その両側から１５０〜６００ｋｇｆの力で加圧し数
十Ａの大電流を流し接合して行われる。Assembly is performed separately for the cap 10 side and the stem 5 side. Finally, the cap 10 and the stem 5 are overlapped with each other in a vacuum, in the atmosphere or in an arbitrary atmosphere, and 150 to 50 It is performed by pressurizing with a force of 600 kgf and flowing a large current of several tens of amps to join them.
【０００８】キャップ１０とステム５の固着に先立っ
て、キャップ１０には、フィルタ１１が、例えば、接着
剤１２により固着される。ステム５には、端子６がガラ
ス等の封着材７を介して取付けられ、赤外線センサー素
子１がダイボンドペースト８を介して実装され、ボンデ
ィングワイヤー９により端子６と赤外線センサー素子１
の電極パッドは接続される。Prior to fixing the cap 10 to the stem 5, a filter 11 is fixed to the cap 10 with, for example, an adhesive 12. The terminal 6 is attached to the stem 5 via a sealing material 7 such as glass, the infrared sensor element 1 is mounted via a die bond paste 8, and the terminal 6 and the infrared sensor element 1 are bonded by a bonding wire 9.
Electrode pads are connected.
【０００９】ステム５及びキャップ１０の材料として
は、コバール等の金属が一般的であるが、これは、圧延
や絞りなどの加工が容易に行え、膨張率の温度特性がガ
ラスのそれとよく一致しており、接合技術が確立されて
いるためである。As a material for the stem 5 and the cap 10, a metal such as Kovar is generally used. However, it can be easily processed by rolling or drawing, and its temperature coefficient of expansion coefficient is in good agreement with that of glass. This is because the joining technology has been established.
【００１０】次に、図３に基づいて、赤外線センサー素
子を実装したセンサーモジュールについて説明する。図
３（ａ）は従来の駆動用ＬＳＩ２０の斜視図、図３
（ｂ）がその断面図である。図３（ｃ）は、図２に示し
た赤外線センサー素子１８で、図３（ｄ）がセンサーモ
ジュールを示す側面図で、プリント基板１９には、図３
（ａ）の樹脂封止された駆動用ＬＳＩ２０と、図３
（ｃ）のＣＡＮパッケージに封止された赤外線センサー
素子１８と、抵抗やコンデンサーの周辺回路部品２１が
実装されている。Next, a sensor module mounting an infrared sensor element will be described with reference to FIG. FIG. 3A is a perspective view of a conventional drive LSI 20,
(B) is the sectional view. 3C is a side view showing the infrared sensor element 18 shown in FIG. 2, and FIG. 3D is a side view showing the sensor module.
3A, the resin-sealed drive LSI 20 and FIG.
The infrared sensor element 18 sealed in the CAN package (c) and the peripheral circuit component 21 such as a resistor and a capacitor are mounted.
【００１１】図３（ａ）に示した駆動用ＬＳＩ２０は表
面実装用のＳＯＰ形状のもので、１３は駆動用ＬＳＩベ
アチップ、１４は駆動用ＬＳＩベアチップ１３を実装す
るダイパッド、１５は外部回路と接続するためのリード
で、表面実装用に曲げ加工が施されている。１６はリー
ド１５と駆動用ＬＳＩベアチップ１３の電極パッドを接
続するボンディングワイヤー、１７は駆動用ＬＳＩを保
護するエポキシ樹脂等の封止樹脂で、このＬＳＩは赤外
線センサー素子１を実装した半導体装置１８に電流を供
給し、その出力信号に対して演算、判断等の処理を行う
ものである。The driving LSI 20 shown in FIG. 3A has a surface mounting SOP shape, 13 is a driving LSI bare chip, 14 is a die pad for mounting the driving LSI bare chip 13, and 15 is connected to an external circuit. These leads are for bending, and are bent for surface mounting. Reference numeral 16 is a bonding wire that connects the lead 15 to the electrode pad of the drive LSI bare chip 13, and 17 is a sealing resin such as an epoxy resin that protects the drive LSI. This LSI is a semiconductor device 18 on which the infrared sensor element 1 is mounted. A current is supplied and the output signal is subjected to processing such as calculation and judgment.
【００１２】組立は周知の通り、ダイパッド１４及びリ
ード１５が形成されたリードフレームへの駆動用ＬＳＩ
ベアチップ１３搭載、駆動用ＬＳＩベアチップ１３の電
極パッドとリード１５間のワイヤーボンディング、樹脂
封止、分断等によって行われる。As is well known for assembly, a drive LSI for a lead frame on which the die pad 14 and the leads 15 are formed.
This is performed by mounting the bare chip 13, wire bonding between the electrode pad of the drive LSI bare chip 13 and the lead 15, resin sealing, dividing, and the like.
【００１３】図３（ｄ）で、半導体装置１８は、プリン
ト基板１９のスルーホールにその端子を挿入して半田付
けにより実装され、駆動用ＬＳＩ２０及びその他の周辺
回路部品２１は基板の両面に表面実装されている。ま
た、２２はレンズで、赤外線センサー素子１の効率を上
げるために半導体装置１８のフィルタ１１の前面に配置
されたものである。In FIG. 3D, the semiconductor device 18 is mounted by inserting its terminals into the through holes of the printed circuit board 19 and soldering, and the drive LSI 20 and other peripheral circuit components 21 are provided on both surfaces of the circuit board. It is implemented. Reference numeral 22 denotes a lens, which is arranged in front of the filter 11 of the semiconductor device 18 in order to improve the efficiency of the infrared sensor element 1.
【００１４】[0014]
【発明が解決しようとする課題】上記のように、従来、
赤外線センサー素子等の半導体センサー素子を実装する
半導体装置はＣＡＮパッケージ、その駆動用ＬＳＩは樹
脂封止と、個別にパッケージングされ、プリント基板上
でその他の周辺部品と共に接続されていたが、それぞれ
の部品でパッケージが占める体積が大きいため、プリン
ト基板の実装密度が低かった。As described above, as described above,
The semiconductor device on which the semiconductor sensor element such as the infrared sensor element is mounted is a CAN package, and the driving LSI is packaged individually with resin and connected together with other peripheral components on the printed circuit board. The packaging density of the printed circuit board was low because the package occupied a large volume of components.
【００１５】本発明は、上記問題点に鑑みなされたもの
で、その目的とするところは、半導体センサー素子を実
装する半導体装置及びその駆動用ＬＳＩがプリント基板
上に占めるスペースを小さくし、プリント基板の実装密
度を向上させることにより、電子機器の小型化、薄型化
が図れる半導体装置の構造を提供することにある。The present invention has been made in view of the above problems, and an object of the present invention is to reduce the space occupied by a semiconductor device on which a semiconductor sensor element is mounted and its driving LSI on the printed circuit board. An object of the present invention is to provide a structure of a semiconductor device capable of reducing the size and thickness of an electronic device by improving the mounting density of the device.
【００１６】[0016]
【課題を解決するための手段】上記課題を解決するため
本発明は、半導体センサー素子を実装する半導体装置に
おいて、半導体センサー素子と、その半導体センサー素
子を突起電極を介してその上面に実装し、前記半導体セ
ンサー素子を駆動し、その出力信号を処理する駆動用Ｌ
ＳＩベアチップと、その駆動用ＬＳＩベアチップをダイ
ボンドペーストを介してその上面に実装するステムと、
そのステムに貫通保持され、ボンディングワイヤーにて
前記駆動用ＬＳＩベアチップと接続される端子と、下方
の開口に前記ステムが固着された略筒状の内部保護用の
キャップと、そのキャップの上方の開口に固着されるフ
ィルタを有することを特徴とするものである。In order to solve the above-mentioned problems, the present invention provides a semiconductor device for mounting a semiconductor sensor element, the semiconductor sensor element and the semiconductor sensor element being mounted on a top surface thereof through a protruding electrode, Driving L for driving the semiconductor sensor element and processing the output signal thereof
An SI bare chip and a stem for mounting the driving LSI bare chip on its upper surface via a die bond paste;
A terminal penetratingly held by the stem and connected to the drive LSI bare chip by a bonding wire, a substantially cylindrical internal protection cap having the stem fixed to the lower opening, and an opening above the cap It has a filter fixed to.
【００１７】[0017]
【作用】本発明の半導体装置においては、駆動用ＬＳＩ
ベアチップは、赤外線センサー素子を固定する実装台と
して働き、それらの電極パッド間に形成された突起電極
は、駆動用ＬＳＩベアチップと半導体センサー素子を電
気的に接続する。In the semiconductor device of the present invention, the driving LSI
The bare chip acts as a mounting base for fixing the infrared sensor element, and the protruding electrodes formed between the electrode pads electrically connect the drive LSI bare chip and the semiconductor sensor element.
【００１８】また、ステムとキャップとフィルタは、赤
外線センサー素子、駆動用ＬＳＩベアチップ、ボンディ
ングワイヤー及び端子を保護する外郭となる。Further, the stem, the cap and the filter serve as an outer shell for protecting the infrared sensor element, the driving LSI bare chip, the bonding wire and the terminal.
【００１９】[0019]
【実施例】図１は本発明の一実施例を示す断面図で、図
中、１は図２（ａ）及び（ｂ）に示した赤外線センサー
素子、２はサーミスタ、５は円板状のステムで金属製で
ある。ステム５は、その上面に後述する駆動用ＬＳＩベ
アチップ１３をＡｇペースト等のダイボンドペースト８
を介して実装している。このステム５にはガラス等の封
着材７を介して端子６が貫通保持されている。また、そ
の周縁には、後述するキャップ１０との溶接部となる鍔
部５ａが全周にわたって形成されている。1 is a cross-sectional view showing an embodiment of the present invention, in which 1 is an infrared sensor element shown in FIGS. 2 (a) and 2 (b), 2 is a thermistor, and 5 is a disc-like shape. The stem is made of metal. The stem 5 has a drive LSI bare chip 13 (to be described later) on its upper surface, which is a die bond paste 8 such as Ag paste.
It is implemented through. A terminal 6 is penetratingly held in the stem 5 through a sealing material 7 such as glass. In addition, a flange portion 5a, which is a welded portion with a cap 10 to be described later, is formed on the peripheral edge over the entire circumference.
【００２０】９は、Ａｕワイヤー等のボンディングワイ
ヤーで、駆動用ＬＳＩベアチップ１３の電極パッドと端
子６を電気的に接続するものである。１０は、円筒状の
キャップで、ステム５に取り付けられ半導体装置内部を
保護するものである。その周縁には、ステム５に溶接す
るための鍔部１０ａが形成されている。１１はフィルタ
で、赤外線が透過するガラス等でできており、接着剤１
２によりキャップ１０に取り付けられている。１３は駆
動用ＬＳＩベアチップで、その上面には突起電極２３を
介して赤外線センサー素子１が実装されている。この駆
動用ＬＳＩベアチップ１３は、赤外線センサー素子１に
電流を供給すると共に、その出力信号を演算、判断して
端子６に出力する機能がある。２３は突起電極（バン
プ）で、駆動用ＬＳＩベアチップ１３の電極パッドと赤
外線センサー素子１の電極パッドを電気的に接続するも
のである。Reference numeral 9 is a bonding wire such as an Au wire for electrically connecting the electrode pad of the drive LSI bare chip 13 and the terminal 6. A cylindrical cap 10 is attached to the stem 5 to protect the inside of the semiconductor device. A collar portion 10a for welding to the stem 5 is formed on the peripheral edge thereof. Reference numeral 11 denotes a filter, which is made of glass or the like through which infrared rays pass, and has an adhesive 1
It is attached to the cap 10 by 2. Reference numeral 13 is a drive LSI bare chip, on the upper surface of which the infrared sensor element 1 is mounted via the protruding electrode 23. The drive LSI bare chip 13 has a function of supplying a current to the infrared sensor element 1 and calculating and determining an output signal thereof to output to the terminal 6. Reference numeral 23 is a bump electrode, which electrically connects the electrode pad of the driving LSI bare chip 13 and the electrode pad of the infrared sensor element 1.
【００２１】実施例では、ステム５は円板状、キャップ
１０は円筒状であり、それぞれ溶接用の鍔部を有すると
したが、その形状は特に限定されるものではなく、ま
た、その材料としてセラミックス等を用いてもよい。ス
テム５へのキャップ１０の固定及びキャップ１０へのフ
ィルタ１１の固定も溶接によらず、陽極接合法や接着等
による方法としてもよい。In the embodiment, the stem 5 has a disk shape and the cap 10 has a cylindrical shape, and each has a brim portion for welding. However, the shape is not particularly limited, and its material is Ceramics or the like may be used. The cap 10 may be fixed to the stem 5 and the filter 11 may be fixed to the cap 10 not by welding but by anodic bonding or adhesion.
【００２２】図に示すように本発明の半導体装置は、駆
動用ＬＳＩベアチップ１３と赤外線センサー素子１を突
起電極（バンプ）２３を介して接続し、１つのパッケー
ジに収めたことを特徴とするものである。駆動用ＬＳＩ
ベアチップ１３及び半導体センサー素子１の基台は共に
Ｓｉ製で線膨張係数が同じであるため、このように構成
することにより、温度変化による熱応力が、接続箇所で
ある突起電極２３の部分にかからず、信頼性が向上する
という利点も生まれる。As shown in the figure, the semiconductor device of the present invention is characterized in that the driving LSI bare chip 13 and the infrared sensor element 1 are connected through a protruding electrode (bump) 23 and housed in one package. Is. Drive LSI
Since both the bare chip 13 and the base of the semiconductor sensor element 1 are made of Si and have the same linear expansion coefficient, by configuring in this way, thermal stress due to temperature change is not applied to the protruding electrode 23, which is the connection point. Not surprisingly, there is an advantage that reliability is improved.
【００２３】組立は、例えば、駆動用ＬＳＩベアチップ
１３または赤外線センサー素子１にＡｕ製の突起電極２
３を形成しておき、駆動用ＬＳＩベアチップ１３上に赤
外線センサー素子１を、対応する電極パッドと突起電極
２３の位置合わせをして配置し、加圧、加熱して赤外線
センサー素子１を駆動用ＬＳＩベアチップ１３上に接合
した後、この駆動用ＬＳＩベアチップ１３をダイボンド
ペースト８を介してステム５に実装し、端子６と駆動用
ＬＳＩベアチップ１３の電極パッドとをボンディングワ
イヤー９にて接続し、キャップ１０をステム５に溶接し
て行われる。For the assembly, for example, the drive LSI bare chip 13 or the infrared sensor element 1 and the Au-made projection electrode 2 are attached.
3 is formed, and the infrared sensor element 1 is arranged on the driving LSI bare chip 13 by aligning the corresponding electrode pad and the protruding electrode 23, and the infrared sensor element 1 is driven by pressurizing and heating. After bonding on the LSI bare chip 13, the driving LSI bare chip 13 is mounted on the stem 5 via the die bond paste 8, and the terminal 6 and the electrode pad of the driving LSI bare chip 13 are connected by a bonding wire 9 to form a cap. 10 is welded to the stem 5.
【００２４】ここで、図１の赤外線センサー素子１が、
図２（ｃ）の従来例の赤外線センサー素子１と比べて、
上下が逆になっているのは、図２（ｃ）の例では、サー
ミスタ２が搭載された面にある電極パッドと端子６をボ
ンディングワイヤー９により接続していたのに対して、
図１の例では、サーミスタ２が搭載された面にある電極
パッドと駆動用ＬＳＩベアチップ１３の電極パッドを突
起電極２３を介して接続するようにしたためである。Here, the infrared sensor element 1 shown in FIG.
Compared to the conventional infrared sensor element 1 of FIG.
In the example of FIG. 2C, the upper and lower sides are reversed, whereas the electrode pad on the surface on which the thermistor 2 is mounted and the terminal 6 are connected by the bonding wire 9.
This is because in the example of FIG. 1, the electrode pads on the surface on which the thermistor 2 is mounted and the electrode pads of the driving LSI bare chip 13 are connected via the protruding electrodes 23.
【００２５】突起電極２３の材料としては、Ａｕが一般
的であるがインジュームや半田等でも同じ構成とするこ
とができる。また、突起電極２３の形成方法としては、
Ａｕワイヤーボンディングの第一ボンドのネックでワイ
ヤーを切断して行うスタッドバンプ法が一般的である
が、メッキによりＡｕを析出し形成することもでき、特
に限定されるものではない。Au is generally used as the material of the bump electrodes 23, but indium, solder or the like can be used for the same structure. In addition, as a method of forming the protruding electrode 23,
A stud bump method in which a wire is cut at the neck of the first bond of Au wire bonding is generally used, but Au can be deposited and formed by plating, and the method is not particularly limited.
【００２６】[0026]
【発明の効果】以上のように構成することで、赤外線セ
ンサー素子等の半導体センサー素子と駆動用ＬＳＩベア
チップを一体化して扱うことができ、１つのパッケージ
に収めることができるようになるため、プリント基板の
実装密度を向上させることができ、機器の小型化、薄型
化が図れる。With the above-mentioned structure, the semiconductor sensor element such as the infrared sensor element and the driving LSI bare chip can be integrated and handled, and can be accommodated in one package. The board mounting density can be improved, and the device can be made smaller and thinner.
【図１】本発明の半導体装置の一例を示す断面図であ
る。FIG. 1 is a cross-sectional view showing an example of a semiconductor device of the present invention.
【図２】（ａ）は赤外線センサー素子の一例を示す斜視
図、（ｂ）はその断面図である。（ｃ）は赤外線センサ
ー素子を実装した半導体装置の従来例を示す断面図であ
る。2A is a perspective view showing an example of an infrared sensor element, and FIG. 2B is a sectional view thereof. (C) is a cross-sectional view showing a conventional example of a semiconductor device on which an infrared sensor element is mounted.
【図３】（ａ）は従来の駆動用ＬＳＩの一例を示す斜視
図、（ｂ）はその断面図であり、（ｃ）は赤外線センサ
ー素子を実装した従来の半導体装置の断面図、（ｄ）は
従来のセンサーモジュールの側面図である。3A is a perspective view showing an example of a conventional drive LSI, FIG. 3B is a sectional view thereof, FIG. 3C is a sectional view of a conventional semiconductor device on which an infrared sensor element is mounted, and FIG. 4) is a side view of a conventional sensor module.
１ 赤外線センサー素子 ２ サーミスタ ３ 熱絶縁膜 ４ シリコン基板 ４ａ 空隙部 ５ ステム ５ａ ステム鍔部 ６ 端子 ７ 封着材 ８ ダイボンドペースト ９ ボンディングワイヤー １０ キャップ １０ａ キャップ鍔部 １１ フィルタ １２ 接着剤 １３ 駆動用ＬＳＩベアチップ １４ ダイパッド １５ リード １６ ボンディングワイヤー １７ 封止樹脂 １８ 半導体装置 １９ プリント基板 ２０ 駆動用ＬＳＩ ２１ 周辺回路部品 ２２ レンズ ２３ 突起電極 1 Infrared Sensor Element 2 Thermistor 3 Thermal Insulation Film 4 Silicon Substrate 4a Void 5 Stem 5a Stem Collar 6 Terminal 7 Sealing Material 8 Die Bond Paste 9 Bonding Wire 10 Cap 10a Cap Collar 11 Filter 12 Adhesive 13 Drive LSI Bare Chip 14 Die Pad 15 Lead 16 Bonding Wire 17 Encapsulating Resin 18 Semiconductor Device 19 Printed Circuit Board 20 Drive LSI 21 Peripheral Circuit Component 22 Lens 23 Projection Electrode
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 25/07 25/18 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 25/07 25/18
Claims (1)
置において、半導体センサー素子と、その半導体センサ
ー素子を突起電極を介してその上面に実装し、前記半導
体センサー素子を駆動し、その出力信号を処理する駆動
用ＬＳＩベアチップと、その駆動用ＬＳＩベアチップを
ダイボンドペーストを介してその上面に実装するステム
と、そのステムに貫通保持され、ボンディングワイヤー
にて前記駆動用ＬＳＩベアチップと接続される端子と、
下方の開口に前記ステムが固着された略筒状の内部保護
用のキャップと、そのキャップの上方の開口に固着され
るフィルタを有することを特徴とする半導体装置。1. A semiconductor device on which a semiconductor sensor element is mounted, the semiconductor sensor element and the semiconductor sensor element are mounted on an upper surface of the semiconductor sensor element via a protruding electrode, the semiconductor sensor element is driven, and an output signal thereof is processed. A drive LSI bare chip, a stem on which the drive LSI bare chip is mounted on its upper surface via a die bond paste, a terminal penetratingly held by the stem and connected to the drive LSI bare chip by a bonding wire,
A semiconductor device comprising a substantially cylindrical cap for internal protection having the stem fixed to a lower opening, and a filter fixed to an upper opening of the cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5028700A JP2792377B2 (en) | 1993-02-18 | 1993-02-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5028700A JP2792377B2 (en) | 1993-02-18 | 1993-02-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06241889A true JPH06241889A (en) | 1994-09-02 |
| JP2792377B2 JP2792377B2 (en) | 1998-09-03 |
Family
ID=12255747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5028700A Expired - Lifetime JP2792377B2 (en) | 1993-02-18 | 1993-02-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2792377B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006080350A (en) * | 2004-09-10 | 2006-03-23 | Denso Corp | Semiconductor device, and mounting structure thereof |
| US7112468B2 (en) | 1998-09-25 | 2006-09-26 | Stmicroelectronics, Inc. | Stacked multi-component integrated circuit microprocessor |
| WO2005082651A3 (en) * | 2004-02-27 | 2007-05-24 | Siemens Ag | Temperature sensor and arrangement for regulating the climate in the interior of a motor vehicle |
| JP2007227596A (en) * | 2006-02-23 | 2007-09-06 | Shinko Electric Ind Co Ltd | Semiconductor module and its manufacturing method |
| KR20140011251A (en) * | 2012-07-17 | 2014-01-28 | 한국전자통신연구원 | Sensor for detecting infrared of human body and electric device having the same |
-
1993
- 1993-02-18 JP JP5028700A patent/JP2792377B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7112468B2 (en) | 1998-09-25 | 2006-09-26 | Stmicroelectronics, Inc. | Stacked multi-component integrated circuit microprocessor |
| WO2005082651A3 (en) * | 2004-02-27 | 2007-05-24 | Siemens Ag | Temperature sensor and arrangement for regulating the climate in the interior of a motor vehicle |
| JP2006080350A (en) * | 2004-09-10 | 2006-03-23 | Denso Corp | Semiconductor device, and mounting structure thereof |
| JP2007227596A (en) * | 2006-02-23 | 2007-09-06 | Shinko Electric Ind Co Ltd | Semiconductor module and its manufacturing method |
| KR20140011251A (en) * | 2012-07-17 | 2014-01-28 | 한국전자통신연구원 | Sensor for detecting infrared of human body and electric device having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2792377B2 (en) | 1998-09-03 |
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