JPS59104642A - 集積回路の製法 - Google Patents

集積回路の製法

Info

Publication number
JPS59104642A
JPS59104642A JP58203764A JP20376483A JPS59104642A JP S59104642 A JPS59104642 A JP S59104642A JP 58203764 A JP58203764 A JP 58203764A JP 20376483 A JP20376483 A JP 20376483A JP S59104642 A JPS59104642 A JP S59104642A
Authority
JP
Japan
Prior art keywords
light
layer
material layer
compound
contrast
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58203764A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6240697B2 (enrdf_load_stackoverflow
Inventor
ブル−ス・フレデリツク・グリフイング
ポ−ル・リチヤ−ド・ウエスト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS59104642A publication Critical patent/JPS59104642A/ja
Publication of JPS6240697B2 publication Critical patent/JPS6240697B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58203764A 1982-11-01 1983-11-01 集積回路の製法 Granted JPS59104642A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US43819482A 1982-11-01 1982-11-01
US438194 1982-11-01
US536923 1983-09-28

Publications (2)

Publication Number Publication Date
JPS59104642A true JPS59104642A (ja) 1984-06-16
JPS6240697B2 JPS6240697B2 (enrdf_load_stackoverflow) 1987-08-29

Family

ID=23739639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203764A Granted JPS59104642A (ja) 1982-11-01 1983-11-01 集積回路の製法

Country Status (1)

Country Link
JP (1) JPS59104642A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184644A (ja) * 1984-09-04 1986-04-30 マイクロサイ,インコーポレイテッド 写真製版方法及びバリヤ−層を含む組合せ
JPS61250634A (ja) * 1985-04-30 1986-11-07 Toshiba Corp パタ−ン形成材料
JPH0341452A (ja) * 1989-06-02 1991-02-21 Digital Equip Corp <Dec> 厚い垂直壁を有するフォトレジストパターンを製造するためのマイクロリソグラフィ方法
US5188924A (en) * 1984-05-14 1993-02-23 Kabushiki Kaisha Toshiba Pattern forming method utilizing material with photoresist film underlayer and contrast enhancement overlayer containing photosensitive diazonium salt
JPH06148899A (ja) * 1992-11-02 1994-05-27 Shin Etsu Chem Co Ltd レジストパターン形成方法
US5902716A (en) * 1995-09-05 1999-05-11 Nikon Corporation Exposure method and apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI875260B (zh) * 2023-10-23 2025-03-01 奇美實業股份有限公司 水溶性組合物、其用途及半導體裝置的製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3416922A (en) * 1963-07-04 1968-12-17 Azoplate Corp Resinous printing plate compositions containing light-sensitive nitrones
GB1186772A (en) * 1966-07-01 1970-04-02 American Cyanamid Co Improved Technique of Photographic Dodging and Modified Photographic Film
JPS4988466A (enrdf_load_stackoverflow) * 1972-11-30 1974-08-23
US3873313A (en) * 1973-05-21 1975-03-25 Ibm Process for forming a resist mask
US4005437A (en) * 1975-04-18 1977-01-25 Rca Corporation Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3416922A (en) * 1963-07-04 1968-12-17 Azoplate Corp Resinous printing plate compositions containing light-sensitive nitrones
GB1186772A (en) * 1966-07-01 1970-04-02 American Cyanamid Co Improved Technique of Photographic Dodging and Modified Photographic Film
JPS4988466A (enrdf_load_stackoverflow) * 1972-11-30 1974-08-23
US3873313A (en) * 1973-05-21 1975-03-25 Ibm Process for forming a resist mask
US4005437A (en) * 1975-04-18 1977-01-25 Rca Corporation Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188924A (en) * 1984-05-14 1993-02-23 Kabushiki Kaisha Toshiba Pattern forming method utilizing material with photoresist film underlayer and contrast enhancement overlayer containing photosensitive diazonium salt
JPS6184644A (ja) * 1984-09-04 1986-04-30 マイクロサイ,インコーポレイテッド 写真製版方法及びバリヤ−層を含む組合せ
JPS61250634A (ja) * 1985-04-30 1986-11-07 Toshiba Corp パタ−ン形成材料
JPH0341452A (ja) * 1989-06-02 1991-02-21 Digital Equip Corp <Dec> 厚い垂直壁を有するフォトレジストパターンを製造するためのマイクロリソグラフィ方法
JPH06148899A (ja) * 1992-11-02 1994-05-27 Shin Etsu Chem Co Ltd レジストパターン形成方法
US5902716A (en) * 1995-09-05 1999-05-11 Nikon Corporation Exposure method and apparatus

Also Published As

Publication number Publication date
JPS6240697B2 (enrdf_load_stackoverflow) 1987-08-29

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