JPS5895840A - 半導体装置の製造法 - Google Patents
半導体装置の製造法Info
- Publication number
- JPS5895840A JPS5895840A JP19470481A JP19470481A JPS5895840A JP S5895840 A JPS5895840 A JP S5895840A JP 19470481 A JP19470481 A JP 19470481A JP 19470481 A JP19470481 A JP 19470481A JP S5895840 A JPS5895840 A JP S5895840A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- etching
- cvd method
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 15
- 239000011574 phosphorus Substances 0.000 claims abstract description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 238000000992 sputter etching Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 9
- 230000006837 decompression Effects 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19470481A JPS5895840A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19470481A JPS5895840A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5895840A true JPS5895840A (ja) | 1983-06-07 |
| JPS6249735B2 JPS6249735B2 (enrdf_load_stackoverflow) | 1987-10-21 |
Family
ID=16328870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19470481A Granted JPS5895840A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5895840A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05312643A (ja) * | 1992-05-13 | 1993-11-22 | Orc Mfg Co Ltd | 光量計 |
-
1981
- 1981-11-30 JP JP19470481A patent/JPS5895840A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6249735B2 (enrdf_load_stackoverflow) | 1987-10-21 |
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