JPS5895840A - 半導体装置の製造法 - Google Patents

半導体装置の製造法

Info

Publication number
JPS5895840A
JPS5895840A JP19470481A JP19470481A JPS5895840A JP S5895840 A JPS5895840 A JP S5895840A JP 19470481 A JP19470481 A JP 19470481A JP 19470481 A JP19470481 A JP 19470481A JP S5895840 A JPS5895840 A JP S5895840A
Authority
JP
Japan
Prior art keywords
insulating film
film
etching
cvd method
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19470481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6249735B2 (ca
Inventor
Katsuhiro Tsukamoto
塚本　克博
Hideo Kotani
小谷　秀夫
Hisao Yakushiji
薬師寺　久雄
Hirotsugu Harada
原田　昿嗣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19470481A priority Critical patent/JPS5895840A/ja
Publication of JPS5895840A publication Critical patent/JPS5895840A/ja
Publication of JPS6249735B2 publication Critical patent/JPS6249735B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP19470481A 1981-11-30 1981-11-30 半導体装置の製造法 Granted JPS5895840A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19470481A JPS5895840A (ja) 1981-11-30 1981-11-30 半導体装置の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19470481A JPS5895840A (ja) 1981-11-30 1981-11-30 半導体装置の製造法

Publications (2)

Publication Number Publication Date
JPS5895840A true JPS5895840A (ja) 1983-06-07
JPS6249735B2 JPS6249735B2 (ca) 1987-10-21

Family

ID=16328870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19470481A Granted JPS5895840A (ja) 1981-11-30 1981-11-30 半導体装置の製造法

Country Status (1)

Country Link
JP (1) JPS5895840A (ca)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05312643A (ja) * 1992-05-13 1993-11-22 Orc Mfg Co Ltd 光量計

Also Published As

Publication number Publication date
JPS6249735B2 (ca) 1987-10-21

Similar Documents

Publication Publication Date Title
US5464500A (en) Method for taper etching metal
JPS5935445A (ja) 半導体装置の製造方法
JPS5895840A (ja) 半導体装置の製造法
JPS58112365A (ja) 薄膜トランジスタの製造方法
JP3348564B2 (ja) 誘電体キャパシタの製造方法
JP2716156B2 (ja) 半導体装置の製造方法
JP2606315B2 (ja) 半導体装置の製造方法
JPS5966125A (ja) 半導体装置の製造方法
JPS6254427A (ja) 半導体装置の製造方法
JPH06244286A (ja) 半導体装置の製造方法
JPS6119132A (ja) 半導体装置の製造方法
JPS59175124A (ja) 半導体装置の製造方法
JPS5928358A (ja) 半導体装置の製造方法
JPS6255701B2 (ca)
JPS5892234A (ja) 半導体装置およびその製造方法
JPS5913348A (ja) 半導体装置の製造方法
JP2823727B2 (ja) コンタクト形成方法
JPH0685068A (ja) 半導体装置の製造方法
JPS6028246A (ja) 半導体多層配線の製造方法
JPS6015948A (ja) 半導体装置の製造法
JPS58155A (ja) 半導体装置の製造方法
JPS63177445A (ja) 半導体装置の製造方法
JPH03297134A (ja) パターン形成方法
JPS6064451A (ja) 半導体装置の製造方法
JPH01160056A (ja) 薄膜電界効果型トランジスタの製造方法