JPS5893289A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5893289A
JPS5893289A JP56192124A JP19212481A JPS5893289A JP S5893289 A JPS5893289 A JP S5893289A JP 56192124 A JP56192124 A JP 56192124A JP 19212481 A JP19212481 A JP 19212481A JP S5893289 A JPS5893289 A JP S5893289A
Authority
JP
Japan
Prior art keywords
film
silicon nitride
forming
nitride film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56192124A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262070B2 (enrdf_load_stackoverflow
Inventor
Masahiro Yamada
正弘 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56192124A priority Critical patent/JPS5893289A/ja
Publication of JPS5893289A publication Critical patent/JPS5893289A/ja
Publication of JPS6262070B2 publication Critical patent/JPS6262070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
JP56192124A 1981-11-30 1981-11-30 半導体装置の製造方法 Granted JPS5893289A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56192124A JPS5893289A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56192124A JPS5893289A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5893289A true JPS5893289A (ja) 1983-06-02
JPS6262070B2 JPS6262070B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=16286068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56192124A Granted JPS5893289A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5893289A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212180A (ja) * 1982-06-03 1983-12-09 Matsushita Electronics Corp 不揮発性記憶装置およびその製造方法
JPS5969973A (ja) * 1982-10-15 1984-04-20 Nec Corp 半導体装置
JPS603159A (ja) * 1983-06-21 1985-01-09 Matsushita Electronics Corp 不揮発性記憶装置の製造方法
US5470771A (en) * 1989-04-28 1995-11-28 Nippondenso Co., Ltd. Method of manufacturing a floating gate memory device
US6373093B2 (en) 1989-04-28 2002-04-16 Nippondenso Corporation Semiconductor memory device and method of manufacturing the same
WO2004021449A1 (ja) * 2002-08-30 2004-03-11 Fasl Llc 半導体記憶装置及びその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212180A (ja) * 1982-06-03 1983-12-09 Matsushita Electronics Corp 不揮発性記憶装置およびその製造方法
JPS5969973A (ja) * 1982-10-15 1984-04-20 Nec Corp 半導体装置
JPS603159A (ja) * 1983-06-21 1985-01-09 Matsushita Electronics Corp 不揮発性記憶装置の製造方法
US5470771A (en) * 1989-04-28 1995-11-28 Nippondenso Co., Ltd. Method of manufacturing a floating gate memory device
US6365458B1 (en) 1989-04-28 2002-04-02 Nippondenso Co., Ltd. Semiconductor memory device and method of manufacturing the same
US6373093B2 (en) 1989-04-28 2002-04-16 Nippondenso Corporation Semiconductor memory device and method of manufacturing the same
US6525400B2 (en) 1989-04-28 2003-02-25 Denso Corporation Semiconductor memory device and method of manufacturing the same
WO2004021449A1 (ja) * 2002-08-30 2004-03-11 Fasl Llc 半導体記憶装置及びその製造方法
US7253046B2 (en) 2002-08-30 2007-08-07 Spansion Llc. Semiconductor memory device and manufacturing method thereof
US7410857B2 (en) 2002-08-30 2008-08-12 Spansion Llc. Semiconductor memory device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6262070B2 (enrdf_load_stackoverflow) 1987-12-24

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