JPS5892251A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5892251A
JPS5892251A JP56190352A JP19035281A JPS5892251A JP S5892251 A JPS5892251 A JP S5892251A JP 56190352 A JP56190352 A JP 56190352A JP 19035281 A JP19035281 A JP 19035281A JP S5892251 A JPS5892251 A JP S5892251A
Authority
JP
Japan
Prior art keywords
wiring
insulating film
cut
cavity
insulation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56190352A
Other languages
English (en)
Japanese (ja)
Other versions
JPS611902B2 (enExample
Inventor
Hajime Kamioka
上岡 元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56190352A priority Critical patent/JPS5892251A/ja
Publication of JPS5892251A publication Critical patent/JPS5892251A/ja
Publication of JPS611902B2 publication Critical patent/JPS611902B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP56190352A 1981-11-27 1981-11-27 半導体装置の製造方法 Granted JPS5892251A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56190352A JPS5892251A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56190352A JPS5892251A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5892251A true JPS5892251A (ja) 1983-06-01
JPS611902B2 JPS611902B2 (enExample) 1986-01-21

Family

ID=16256758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56190352A Granted JPS5892251A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5892251A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177649A (ja) * 1984-02-24 1985-09-11 Toshiba Corp ヒユ−ズの切断方法
JPS6334952A (ja) * 1986-07-29 1988-02-15 Nec Corp 半導体装置内の回路選択用ヒユ−ズ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06188612A (ja) * 1992-12-21 1994-07-08 Tokin Corp 誘電体フィルタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177649A (ja) * 1984-02-24 1985-09-11 Toshiba Corp ヒユ−ズの切断方法
JPS6334952A (ja) * 1986-07-29 1988-02-15 Nec Corp 半導体装置内の回路選択用ヒユ−ズ

Also Published As

Publication number Publication date
JPS611902B2 (enExample) 1986-01-21

Similar Documents

Publication Publication Date Title
US4740485A (en) Method for forming a fuse
US4751197A (en) Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator
EP0090565B1 (en) Process for selectively cutting an electrical conductive layer by irradiation with an energy beam
US20010054745A1 (en) Metal fuse in copper dual damascene
JPS58161361A (ja) 半導体装置の製造方法
JPH04267366A (ja) 薄膜抵抗器
JPH0563891B2 (enExample)
JP2769332B2 (ja) 電気的にプログラム可能な集積回路の製法
JPH01184861A (ja) レーザ光によるトリミング方法
EP0448471B1 (en) Method of manufacturing a semiconductor device involving a step of planarizing a metal layer
JPS5892251A (ja) 半導体装置の製造方法
JPS5892252A (ja) 半導体装置の製造方法
JPH01125937A (ja) 集積回路の製造方法
JPS5948543B2 (ja) 半導体装置
JPH0350756A (ja) 半導体集積回路の製造方法
JPH0760853B2 (ja) レ−ザ・ビ−ムでプログラムし得る半導体装置と半導体装置の製法
JPS5867042A (ja) 半導体装置の製造方法
JPS5814525A (ja) 半導体装置の製造方法
JPH0440858B2 (enExample)
JPS5878454A (ja) 半導体装置の製造方法
JPS5961171A (ja) ヒューズromを有する半導体装置及びヒューズromの導通方法
JPH1050852A (ja) 半導体装置の製造方法
JPH077806B2 (ja) 半導体装置
JPH0638454B2 (ja) ヒユ−ズ切断による半導体装置の製造方法
JPH05251564A (ja) 半導体装置の製造方法