JPS5892218A - 半導体装置作製方法 - Google Patents
半導体装置作製方法Info
- Publication number
- JPS5892218A JPS5892218A JP56191268A JP19126881A JPS5892218A JP S5892218 A JPS5892218 A JP S5892218A JP 56191268 A JP56191268 A JP 56191268A JP 19126881 A JP19126881 A JP 19126881A JP S5892218 A JPS5892218 A JP S5892218A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type
- semiconductor layer
- reaction
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000012808 vapor phase Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 29
- 239000012535 impurity Substances 0.000 abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 11
- 238000000576 coating method Methods 0.000 abstract description 10
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 7
- 238000002156 mixing Methods 0.000 abstract description 5
- 238000007599 discharging Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 37
- 239000007789 gas Substances 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 150000001340 alkali metals Chemical group 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- YQEZLKZALYSWHR-UHFFFAOYSA-N Ketamine Chemical compound C=1C=CC=C(Cl)C=1C1(NC)CCCCC1=O YQEZLKZALYSWHR-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- -1 moisture Chemical compound 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 2
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 210000000959 ear middle Anatomy 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56191268A JPS5892218A (ja) | 1981-11-28 | 1981-11-28 | 半導体装置作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56191268A JPS5892218A (ja) | 1981-11-28 | 1981-11-28 | 半導体装置作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1219302A Division JPH02119126A (ja) | 1989-08-25 | 1989-08-25 | 半導体装置作製方法 |
| JP3169305A Division JP2573108B2 (ja) | 1991-06-14 | 1991-06-14 | プラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5892218A true JPS5892218A (ja) | 1983-06-01 |
| JPH0512850B2 JPH0512850B2 (enrdf_load_stackoverflow) | 1993-02-19 |
Family
ID=16271712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56191268A Granted JPS5892218A (ja) | 1981-11-28 | 1981-11-28 | 半導体装置作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5892218A (enrdf_load_stackoverflow) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61256625A (ja) * | 1985-05-08 | 1986-11-14 | Nippon Denso Co Ltd | 薄膜半導体素子の製造方法 |
| JPS63215037A (ja) * | 1987-03-04 | 1988-09-07 | Toshiba Corp | ケイ素系薄膜の製造方法 |
| JPH056877A (ja) * | 1991-06-14 | 1993-01-14 | Semiconductor Energy Lab Co Ltd | 炭素被膜のエツチング方法 |
| JPH0620975A (ja) * | 1992-09-11 | 1994-01-28 | Semiconductor Energy Lab Co Ltd | 炭素膜作製方法 |
| US5521400A (en) * | 1982-08-24 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device with low sodium concentration |
| US5599732A (en) * | 1995-08-21 | 1997-02-04 | Northwestern University | Method for growing III-V semiconductor films using a coated reaction chamber |
| US5632821A (en) * | 1995-03-03 | 1997-05-27 | Anelva Corporation | Post treatment method for in-situ cleaning |
| US6020035A (en) * | 1996-10-29 | 2000-02-01 | Applied Materials, Inc. | Film to tie up loose fluorine in the chamber after a clean process |
| US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
| US6121161A (en) * | 1997-06-11 | 2000-09-19 | Applied Materials, Inc. | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
| US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
| US6221701B1 (en) | 1984-05-18 | 2001-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
| US6589868B2 (en) | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
| US7109114B2 (en) | 2004-05-07 | 2006-09-19 | Applied Materials, Inc. | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
| US7465966B2 (en) | 2003-03-19 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Film formation method and manufacturing method of semiconductor device |
| WO2014050304A1 (ja) * | 2012-09-27 | 2014-04-03 | 三洋電機株式会社 | 光電変換素子とその製造方法 |
-
1981
- 1981-11-28 JP JP56191268A patent/JPS5892218A/ja active Granted
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| US5521400A (en) * | 1982-08-24 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device with low sodium concentration |
| US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
| US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
| US6503771B1 (en) | 1983-08-22 | 2003-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device |
| US6660574B1 (en) | 1984-05-18 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a semiconductor device including recombination center neutralizer |
| US6221701B1 (en) | 1984-05-18 | 2001-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
| US5556794A (en) * | 1985-05-07 | 1996-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having low sodium concentration |
| US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
| JPS61256625A (ja) * | 1985-05-08 | 1986-11-14 | Nippon Denso Co Ltd | 薄膜半導体素子の製造方法 |
| JPS63215037A (ja) * | 1987-03-04 | 1988-09-07 | Toshiba Corp | ケイ素系薄膜の製造方法 |
| JPH056877A (ja) * | 1991-06-14 | 1993-01-14 | Semiconductor Energy Lab Co Ltd | 炭素被膜のエツチング方法 |
| JPH0620975A (ja) * | 1992-09-11 | 1994-01-28 | Semiconductor Energy Lab Co Ltd | 炭素膜作製方法 |
| US5632821A (en) * | 1995-03-03 | 1997-05-27 | Anelva Corporation | Post treatment method for in-situ cleaning |
| US5599732A (en) * | 1995-08-21 | 1997-02-04 | Northwestern University | Method for growing III-V semiconductor films using a coated reaction chamber |
| US6223685B1 (en) | 1996-10-29 | 2001-05-01 | Applied Materials, Inc. | Film to tie up loose fluorine in the chamber after a clean process |
| US6020035A (en) * | 1996-10-29 | 2000-02-01 | Applied Materials, Inc. | Film to tie up loose fluorine in the chamber after a clean process |
| US6121161A (en) * | 1997-06-11 | 2000-09-19 | Applied Materials, Inc. | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
| US6589868B2 (en) | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
| US6846742B2 (en) | 2001-02-08 | 2005-01-25 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
| US7465966B2 (en) | 2003-03-19 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Film formation method and manufacturing method of semiconductor device |
| US7109114B2 (en) | 2004-05-07 | 2006-09-19 | Applied Materials, Inc. | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
| WO2014050304A1 (ja) * | 2012-09-27 | 2014-04-03 | 三洋電機株式会社 | 光電変換素子とその製造方法 |
| JPWO2014050304A1 (ja) * | 2012-09-27 | 2016-08-22 | パナソニックＩｐマネジメント株式会社 | 光電変換素子とその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0512850B2 (enrdf_load_stackoverflow) | 1993-02-19 |
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