JPH0370367B2 - - Google Patents

Info

Publication number
JPH0370367B2
JPH0370367B2 JP56192292A JP19229281A JPH0370367B2 JP H0370367 B2 JPH0370367 B2 JP H0370367B2 JP 56192292 A JP56192292 A JP 56192292A JP 19229281 A JP19229281 A JP 19229281A JP H0370367 B2 JPH0370367 B2 JP H0370367B2
Authority
JP
Japan
Prior art keywords
substrate
reactor
common chamber
carrying
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56192292A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5893321A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56192292A priority Critical patent/JPS5893321A/ja
Publication of JPS5893321A publication Critical patent/JPS5893321A/ja
Publication of JPH0370367B2 publication Critical patent/JPH0370367B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP56192292A 1981-11-30 1981-11-30 半導体装置製造装置 Granted JPS5893321A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56192292A JPS5893321A (ja) 1981-11-30 1981-11-30 半導体装置製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56192292A JPS5893321A (ja) 1981-11-30 1981-11-30 半導体装置製造装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP3169057A Division JPH0673348B2 (ja) 1991-06-14 1991-06-14 プラズマ処理装置のクリーニング方法
JP3169056A Division JPH0673347B2 (ja) 1991-06-14 1991-06-14 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS5893321A JPS5893321A (ja) 1983-06-03
JPH0370367B2 true JPH0370367B2 (enrdf_load_stackoverflow) 1991-11-07

Family

ID=16288843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56192292A Granted JPS5893321A (ja) 1981-11-30 1981-11-30 半導体装置製造装置

Country Status (1)

Country Link
JP (1) JPS5893321A (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
KR900001666B1 (ko) * 1985-07-19 1990-03-17 후지쓰가부시끼가이샤 화합물 반도체의 에피택셜층 성장용의 화학적 유기 금속 기상 성장장치
JPH02224221A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd 半導体装置製造方法、基板処理装置および半導体装置製造装置
JPH02294018A (ja) * 1989-05-09 1990-12-05 Hitachi Ltd 成膜装置
JP2644912B2 (ja) 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
USRE39823E1 (en) 1990-08-29 2007-09-11 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
USRE39756E1 (en) 1990-08-29 2007-08-07 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
JP2696265B2 (ja) * 1990-09-28 1998-01-14 株式会社半導体プロセス研究所 半導体装置の製造装置
JP3025811B2 (ja) * 1991-02-18 2000-03-27 株式会社半導体エネルギー研究所 基板処理装置
JPH0673348B2 (ja) * 1991-06-14 1994-09-14 株式会社半導体エネルギー研究所 プラズマ処理装置のクリーニング方法
JP3342119B2 (ja) * 1993-08-02 2002-11-05 富士機械製造株式会社 電子部品装着システム

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945219B2 (ja) * 1976-05-17 1984-11-05 株式会社日立製作所 ウェハ処理装置
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5893321A (ja) 1983-06-03

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