JPS5882519A - 半導体のイオン注入方法 - Google Patents

半導体のイオン注入方法

Info

Publication number
JPS5882519A
JPS5882519A JP56181411A JP18141181A JPS5882519A JP S5882519 A JPS5882519 A JP S5882519A JP 56181411 A JP56181411 A JP 56181411A JP 18141181 A JP18141181 A JP 18141181A JP S5882519 A JPS5882519 A JP S5882519A
Authority
JP
Japan
Prior art keywords
ion implantation
semiconductor
substrate
irradiated
secondary electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56181411A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0517699B2 (cs
Inventor
Tai Sato
佐藤　耐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56181411A priority Critical patent/JPS5882519A/ja
Publication of JPS5882519A publication Critical patent/JPS5882519A/ja
Publication of JPH0517699B2 publication Critical patent/JPH0517699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP56181411A 1981-11-12 1981-11-12 半導体のイオン注入方法 Granted JPS5882519A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56181411A JPS5882519A (ja) 1981-11-12 1981-11-12 半導体のイオン注入方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56181411A JPS5882519A (ja) 1981-11-12 1981-11-12 半導体のイオン注入方法

Publications (2)

Publication Number Publication Date
JPS5882519A true JPS5882519A (ja) 1983-05-18
JPH0517699B2 JPH0517699B2 (cs) 1993-03-09

Family

ID=16100287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56181411A Granted JPS5882519A (ja) 1981-11-12 1981-11-12 半導体のイオン注入方法

Country Status (1)

Country Link
JP (1) JPS5882519A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933257A (en) * 1986-10-13 1990-06-12 Mitsubishi Denki Kabushiki Kaisha Positive quinone diazide photo-resist composition with antistatic agent

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5489475A (en) * 1977-12-27 1979-07-16 Fujitsu Ltd Ion implanting method
JPS5787056A (en) * 1980-09-24 1982-05-31 Varian Associates Method and device for strengthening neutralization of ion beam of positive charge

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5489475A (en) * 1977-12-27 1979-07-16 Fujitsu Ltd Ion implanting method
JPS5787056A (en) * 1980-09-24 1982-05-31 Varian Associates Method and device for strengthening neutralization of ion beam of positive charge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933257A (en) * 1986-10-13 1990-06-12 Mitsubishi Denki Kabushiki Kaisha Positive quinone diazide photo-resist composition with antistatic agent

Also Published As

Publication number Publication date
JPH0517699B2 (cs) 1993-03-09

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