JPH0517699B2 - - Google Patents

Info

Publication number
JPH0517699B2
JPH0517699B2 JP56181411A JP18141181A JPH0517699B2 JP H0517699 B2 JPH0517699 B2 JP H0517699B2 JP 56181411 A JP56181411 A JP 56181411A JP 18141181 A JP18141181 A JP 18141181A JP H0517699 B2 JPH0517699 B2 JP H0517699B2
Authority
JP
Japan
Prior art keywords
semiconductor
ion implantation
ions
thin film
conductive thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56181411A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5882519A (ja
Inventor
Tai Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56181411A priority Critical patent/JPS5882519A/ja
Publication of JPS5882519A publication Critical patent/JPS5882519A/ja
Publication of JPH0517699B2 publication Critical patent/JPH0517699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP56181411A 1981-11-12 1981-11-12 半導体のイオン注入方法 Granted JPS5882519A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56181411A JPS5882519A (ja) 1981-11-12 1981-11-12 半導体のイオン注入方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56181411A JPS5882519A (ja) 1981-11-12 1981-11-12 半導体のイオン注入方法

Publications (2)

Publication Number Publication Date
JPS5882519A JPS5882519A (ja) 1983-05-18
JPH0517699B2 true JPH0517699B2 (cs) 1993-03-09

Family

ID=16100287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56181411A Granted JPS5882519A (ja) 1981-11-12 1981-11-12 半導体のイオン注入方法

Country Status (1)

Country Link
JP (1) JPS5882519A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH083628B2 (ja) * 1986-10-13 1996-01-17 三菱電機株式会社 非帯電性レジスト

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5949685B2 (ja) * 1977-12-27 1984-12-04 富士通株式会社 イオン注入法
FR2490873A1 (fr) * 1980-09-24 1982-03-26 Varian Associates Procede et dispositif destines a produire une neutralisation amelioree d'un faisceau d'ions positifs

Also Published As

Publication number Publication date
JPS5882519A (ja) 1983-05-18

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