JPS5787056A - Method and device for strengthening neutralization of ion beam of positive charge - Google Patents

Method and device for strengthening neutralization of ion beam of positive charge

Info

Publication number
JPS5787056A
JPS5787056A JP14641581A JP14641581A JPS5787056A JP S5787056 A JPS5787056 A JP S5787056A JP 14641581 A JP14641581 A JP 14641581A JP 14641581 A JP14641581 A JP 14641581A JP S5787056 A JPS5787056 A JP S5787056A
Authority
JP
Japan
Prior art keywords
neutralization
strengthening
ion beam
positive charge
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14641581A
Other languages
Japanese (ja)
Other versions
JPS6212625B2 (en
Inventor
Aasaa Robaatoson Debitsudo
Reonaado Taanaa Nooman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of JPS5787056A publication Critical patent/JPS5787056A/en
Publication of JPS6212625B2 publication Critical patent/JPS6212625B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP14641581A 1980-09-24 1981-09-18 Method and device for strengthening neutralization of ion beam of positive charge Granted JPS5787056A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19029780A 1980-09-24 1980-09-24

Publications (2)

Publication Number Publication Date
JPS5787056A true JPS5787056A (en) 1982-05-31
JPS6212625B2 JPS6212625B2 (en) 1987-03-19

Family

ID=22700763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14641581A Granted JPS5787056A (en) 1980-09-24 1981-09-18 Method and device for strengthening neutralization of ion beam of positive charge

Country Status (6)

Country Link
JP (1) JPS5787056A (en)
CH (1) CH653806A5 (en)
DE (1) DE3136787A1 (en)
FR (1) FR2490873A1 (en)
GB (1) GB2084792B (en)
NL (1) NL190209C (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882519A (en) * 1981-11-12 1983-05-18 Toshiba Corp Ion implantation for semiconductor
JPS59196600A (en) * 1983-04-21 1984-11-07 工業技術院長 Neutral particle implanting method and its device
JPS6072228A (en) * 1983-09-28 1985-04-24 Toshiba Corp Method for inpurity doping into semiconductor substrate
JPS61230252A (en) * 1985-04-05 1986-10-14 Hitachi Ltd Ion implantation device
JPS62103952A (en) * 1985-10-29 1987-05-14 Toshiba Corp Ion implanting apparatus
JPS62154447A (en) * 1985-12-25 1987-07-09 Sumitomo Eaton Noba Kk Charge restraint device for wafer
JPS63126220A (en) * 1986-11-14 1988-05-30 Mitsubishi Electric Corp Impurity doping method
JPS63184256A (en) * 1987-01-27 1988-07-29 Tokyo Electron Ltd Ion implatation device
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4675530A (en) * 1985-07-11 1987-06-23 Eaton Corporation Charge density detector for beam implantation
EP3389078A1 (en) * 2017-04-13 2018-10-17 The Swatch Group Research and Development Ltd Method for implanting multi-charged ions on a surface of an object to be treated and installation for implementing said method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136798A (en) * 1977-05-05 1978-11-29 Ibm Ion beam bombardment device
JPS54124879A (en) * 1978-03-22 1979-09-28 Nippon Telegr & Teleph Corp <Ntt> Ion beam deposition
JPS56165192A (en) * 1980-05-26 1981-12-18 Fuji Electric Co Ltd Circle and arcuate generating system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676672A (en) * 1969-02-03 1972-07-11 Benjamin B Meckel Large diameter ion beam apparatus with an apertured plate electrode to maintain uniform flux density across the beam
US3847115A (en) * 1973-05-02 1974-11-12 Nasa System for depositing thin films
US4118630A (en) * 1977-05-05 1978-10-03 International Business Machines Corporation Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface
FR2389998B1 (en) * 1977-05-05 1981-11-20 Ibm

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136798A (en) * 1977-05-05 1978-11-29 Ibm Ion beam bombardment device
JPS54124879A (en) * 1978-03-22 1979-09-28 Nippon Telegr & Teleph Corp <Ntt> Ion beam deposition
JPS56165192A (en) * 1980-05-26 1981-12-18 Fuji Electric Co Ltd Circle and arcuate generating system

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882519A (en) * 1981-11-12 1983-05-18 Toshiba Corp Ion implantation for semiconductor
JPH0517699B2 (en) * 1981-11-12 1993-03-09 Tokyo Shibaura Electric Co
JPS59196600A (en) * 1983-04-21 1984-11-07 工業技術院長 Neutral particle implanting method and its device
JPH0223021B2 (en) * 1983-04-21 1990-05-22 Kogyo Gijutsuin
JPS6072228A (en) * 1983-09-28 1985-04-24 Toshiba Corp Method for inpurity doping into semiconductor substrate
JPS61230252A (en) * 1985-04-05 1986-10-14 Hitachi Ltd Ion implantation device
JPH0526295B2 (en) * 1985-04-05 1993-04-15 Hitachi Ltd
JPS62103952A (en) * 1985-10-29 1987-05-14 Toshiba Corp Ion implanting apparatus
JPS62154447A (en) * 1985-12-25 1987-07-09 Sumitomo Eaton Noba Kk Charge restraint device for wafer
JPS63126220A (en) * 1986-11-14 1988-05-30 Mitsubishi Electric Corp Impurity doping method
JPS63184256A (en) * 1987-01-27 1988-07-29 Tokyo Electron Ltd Ion implatation device
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer

Also Published As

Publication number Publication date
GB2084792A (en) 1982-04-15
NL8104377A (en) 1982-04-16
DE3136787C2 (en) 1992-01-23
JPS6212625B2 (en) 1987-03-19
NL190209B (en) 1993-07-01
FR2490873A1 (en) 1982-03-26
DE3136787A1 (en) 1982-08-26
GB2084792B (en) 1984-08-30
FR2490873B1 (en) 1985-05-17
CH653806A5 (en) 1986-01-15
NL190209C (en) 1993-12-01

Similar Documents

Publication Publication Date Title
GB2070850B (en) Beam scanning and method of use for ion implantation
JPS57132653A (en) Ion source and method of modifying property of substance
JPS56136469A (en) Secondary cell and method of charging same
JPS56128600A (en) Method and device for producing large ion highly charged and utility using same method
GB2086574B (en) Method and apparatus for analysis of ionic species
JPS54158861A (en) Method of and device for injecting ion
JPS572068A (en) Developing method and device
JPS5539694A (en) Method of breaking ion beam
JPS5787056A (en) Method and device for strengthening neutralization of ion beam of positive charge
GB2098818B (en) Method of ion implantation
EP0088457A3 (en) Charged particle beam apparatus
JPS56132557A (en) Ion measuring apparatus and method
JPS5791410A (en) Differential ion trapping apparatus at transition used time
JPS56141556A (en) Non-distructive test method of member
JPS57119465A (en) Method and device for forming cathode of sodium sulfide battery
EP0055030A3 (en) Electrographic method and apparatus
JPS56112061A (en) Ion current forming method and apparatus
DE3367296D1 (en) Method of decladding irradiated fuel elements
JPS53142294A (en) Method and apparatus for focusing ions
JPS5711499A (en) Method and device for generating and dispersing ions
ZA811422B (en) Titration agent and method of using same
JPS5734681A (en) Method of forming quasi-grounding electrode
JPS57121154A (en) Method of treating positive electrode substance
DE3377673D1 (en) Method and means of beam apodization
JPS5776759A (en) Electrode and method of discharging storage device