GB2084792B - Apparatus for enhanced neutralization of positively charged ion beam - Google Patents

Apparatus for enhanced neutralization of positively charged ion beam

Info

Publication number
GB2084792B
GB2084792B GB8128356A GB8128356A GB2084792B GB 2084792 B GB2084792 B GB 2084792B GB 8128356 A GB8128356 A GB 8128356A GB 8128356 A GB8128356 A GB 8128356A GB 2084792 B GB2084792 B GB 2084792B
Authority
GB
United Kingdom
Prior art keywords
ion beam
positively charged
charged ion
enhanced neutralization
neutralization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8128356A
Other versions
GB2084792A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of GB2084792A publication Critical patent/GB2084792A/en
Application granted granted Critical
Publication of GB2084792B publication Critical patent/GB2084792B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
GB8128356A 1980-09-24 1981-09-18 Apparatus for enhanced neutralization of positively charged ion beam Expired GB2084792B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19029780A 1980-09-24 1980-09-24

Publications (2)

Publication Number Publication Date
GB2084792A GB2084792A (en) 1982-04-15
GB2084792B true GB2084792B (en) 1984-08-30

Family

ID=22700763

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8128356A Expired GB2084792B (en) 1980-09-24 1981-09-18 Apparatus for enhanced neutralization of positively charged ion beam

Country Status (6)

Country Link
JP (1) JPS5787056A (en)
CH (1) CH653806A5 (en)
DE (1) DE3136787A1 (en)
FR (1) FR2490873A1 (en)
GB (1) GB2084792B (en)
NL (1) NL190209C (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882519A (en) * 1981-11-12 1983-05-18 Toshiba Corp Ion implantation for semiconductor
JPS59196600A (en) * 1983-04-21 1984-11-07 工業技術院長 Neutral particle implanting method and its device
JPS6072228A (en) * 1983-09-28 1985-04-24 Toshiba Corp Method for inpurity doping into semiconductor substrate
JPS61230252A (en) * 1985-04-05 1986-10-14 Hitachi Ltd Ion implantation device
US4675530A (en) * 1985-07-11 1987-06-23 Eaton Corporation Charge density detector for beam implantation
JPS62103952A (en) * 1985-10-29 1987-05-14 Toshiba Corp Ion implanting apparatus
JPS62154447A (en) * 1985-12-25 1987-07-09 Sumitomo Eaton Noba Kk Charge restraint device for wafer
JPS63126220A (en) * 1986-11-14 1988-05-30 Mitsubishi Electric Corp Impurity doping method
JPS63184256A (en) * 1987-01-27 1988-07-29 Tokyo Electron Ltd Ion implatation device
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer
EP3389078A1 (en) * 2017-04-13 2018-10-17 The Swatch Group Research and Development Ltd Method for implanting multi-charged ions on a surface of an object to be treated and installation for implementing said method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676672A (en) * 1969-02-03 1972-07-11 Benjamin B Meckel Large diameter ion beam apparatus with an apertured plate electrode to maintain uniform flux density across the beam
US3847115A (en) * 1973-05-02 1974-11-12 Nasa System for depositing thin films
US4118630A (en) * 1977-05-05 1978-10-03 International Business Machines Corporation Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface
US4135097A (en) * 1977-05-05 1979-01-16 International Business Machines Corporation Ion implantation apparatus for controlling the surface potential of a target surface
FR2389998B1 (en) * 1977-05-05 1981-11-20 Ibm
JPS54124879A (en) * 1978-03-22 1979-09-28 Nippon Telegr & Teleph Corp <Ntt> Ion beam deposition
JPS56165192A (en) * 1980-05-26 1981-12-18 Fuji Electric Co Ltd Circle and arcuate generating system

Also Published As

Publication number Publication date
NL190209C (en) 1993-12-01
GB2084792A (en) 1982-04-15
CH653806A5 (en) 1986-01-15
DE3136787A1 (en) 1982-08-26
FR2490873B1 (en) 1985-05-17
NL8104377A (en) 1982-04-16
JPS6212625B2 (en) 1987-03-19
JPS5787056A (en) 1982-05-31
NL190209B (en) 1993-07-01
FR2490873A1 (en) 1982-03-26
DE3136787C2 (en) 1992-01-23

Similar Documents

Publication Publication Date Title
GB2069230B (en) Process and apparatus for producing highly charged large ions and an application utilizing this process
DE3164277D1 (en) Ion generating apparatus
GB8406519D0 (en) Scanning beam of charged particles
DE3376921D1 (en) Ion shower apparatus
DE3374626D1 (en) Charged particle beam exposure device incorporating beam splitting
JPS5539694A (en) Method of breaking ion beam
DE3374900D1 (en) Target apparatus
JPS5791472A (en) Curved beam apparatus
EP0054016A3 (en) Apparatus for electron-beam irradiation of surfaces
GB8304436D0 (en) Charged particle beam exposure system
DE3376513D1 (en) Charged particle beam exposure apparatus
GB2084792B (en) Apparatus for enhanced neutralization of positively charged ion beam
EP0088457A3 (en) Charged particle beam apparatus
DE3167131D1 (en) Ion source
DE3379088D1 (en) Apparatus for irradiation with charged particle beams
DE3374488D1 (en) Ion source apparatus
DE3378145D1 (en) Ion beam source
GB2123125B (en) Target apparatus
JPS5749433A (en) Polarizing - compensating apparatus of live body electric potential
JPS5425596A (en) Method of projecting charged particle beam
JPS5425673A (en) Method of projecting charged particle beam
JPS5723500A (en) Ion beam neutralizing device
EP0004064A3 (en) Apparatus for shaping the primary ion beams of an ion microprobe
BG32704A1 (en) Start- regulating apparatus for ion laser
AU553617B2 (en) Electrostatic precipitator apparatus having improved ion generating means

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000918