JPS587829A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS587829A
JPS587829A JP10546881A JP10546881A JPS587829A JP S587829 A JPS587829 A JP S587829A JP 10546881 A JP10546881 A JP 10546881A JP 10546881 A JP10546881 A JP 10546881A JP S587829 A JPS587829 A JP S587829A
Authority
JP
Japan
Prior art keywords
etching
polycrystalline
etched
plasma
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10546881A
Other languages
English (en)
Japanese (ja)
Other versions
JPH031825B2 (enrdf_load_stackoverflow
Inventor
Haruo Okano
晴雄 岡野
Yasuhiro Horiike
靖浩 堀池
Takashi Yamazaki
隆 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10546881A priority Critical patent/JPS587829A/ja
Publication of JPS587829A publication Critical patent/JPS587829A/ja
Publication of JPH031825B2 publication Critical patent/JPH031825B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP10546881A 1981-07-08 1981-07-08 ドライエツチング方法 Granted JPS587829A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10546881A JPS587829A (ja) 1981-07-08 1981-07-08 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10546881A JPS587829A (ja) 1981-07-08 1981-07-08 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS587829A true JPS587829A (ja) 1983-01-17
JPH031825B2 JPH031825B2 (enrdf_load_stackoverflow) 1991-01-11

Family

ID=14408408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10546881A Granted JPS587829A (ja) 1981-07-08 1981-07-08 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS587829A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6415953A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Dry etching method
US4981816A (en) * 1988-10-27 1991-01-01 General Electric Company MO/TI Contact to silicon
US5180466A (en) * 1984-12-29 1993-01-19 Fujitsu Limited Process for dry etching a silicon nitride layer
WO2004030068A1 (de) * 2002-09-23 2004-04-08 Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik Verfahren zur herstellung eines elektronischen bauelements mit einer praseodymoxid-schicht
JP4865915B1 (ja) * 2010-10-22 2012-02-01 泉 菅谷 糸通し機能付き携帯可能な拡大レンズ
US9130444B2 (en) 2007-01-18 2015-09-08 Siemens Aktiengesellschaft Rotary drive with straight primary part segments

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437580A (en) * 1977-08-30 1979-03-20 Nec Corp Dry etching method and target film used for it
JPS55119177A (en) * 1979-02-21 1980-09-12 Ibm Silicon etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437580A (en) * 1977-08-30 1979-03-20 Nec Corp Dry etching method and target film used for it
JPS55119177A (en) * 1979-02-21 1980-09-12 Ibm Silicon etching method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180466A (en) * 1984-12-29 1993-01-19 Fujitsu Limited Process for dry etching a silicon nitride layer
JPS6415953A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Dry etching method
US4981816A (en) * 1988-10-27 1991-01-01 General Electric Company MO/TI Contact to silicon
WO2004030068A1 (de) * 2002-09-23 2004-04-08 Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik Verfahren zur herstellung eines elektronischen bauelements mit einer praseodymoxid-schicht
DE10244862B4 (de) * 2002-09-23 2006-09-14 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Verfahren zur Herstellung eines elektronischen Bauelements mit einer Praseodymoxid-Schicht
US9130444B2 (en) 2007-01-18 2015-09-08 Siemens Aktiengesellschaft Rotary drive with straight primary part segments
JP4865915B1 (ja) * 2010-10-22 2012-02-01 泉 菅谷 糸通し機能付き携帯可能な拡大レンズ

Also Published As

Publication number Publication date
JPH031825B2 (enrdf_load_stackoverflow) 1991-01-11

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