JPS6415953A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS6415953A
JPS6415953A JP17096587A JP17096587A JPS6415953A JP S6415953 A JPS6415953 A JP S6415953A JP 17096587 A JP17096587 A JP 17096587A JP 17096587 A JP17096587 A JP 17096587A JP S6415953 A JPS6415953 A JP S6415953A
Authority
JP
Japan
Prior art keywords
film
etching
etched
chamber
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17096587A
Other languages
Japanese (ja)
Other versions
JP2690900B2 (en
Inventor
Yoshie Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62170965A priority Critical patent/JP2690900B2/en
Publication of JPS6415953A publication Critical patent/JPS6415953A/en
Application granted granted Critical
Publication of JP2690900B2 publication Critical patent/JP2690900B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To enable the shape control of the etching of a two-layered wiring film by a method wherein, in a dry etching method for processing a two-layered metal film, the respective metal films are processed in different chambers and with different etching conditions. CONSTITUTION:A wafer is first etched in a chamber 6 on an Al-Si-Cu film 2 which is the upper film thereof. Then, it passes through a buffer 7 and, held in vacuum, transferred to a chamber 8 where a Ti film 3 is etched. In etching the Ti film 3, by mixing a chlorine gas by 50%, a vertical shape is obtained. By monitoring the strength of a specific wavelength to accurately determine the ending of the etching of the Ti film, excessive etching of the ground insulating film can be prevented.
JP62170965A 1987-07-10 1987-07-10 Dry etching method Expired - Lifetime JP2690900B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62170965A JP2690900B2 (en) 1987-07-10 1987-07-10 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170965A JP2690900B2 (en) 1987-07-10 1987-07-10 Dry etching method

Publications (2)

Publication Number Publication Date
JPS6415953A true JPS6415953A (en) 1989-01-19
JP2690900B2 JP2690900B2 (en) 1997-12-17

Family

ID=15914651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62170965A Expired - Lifetime JP2690900B2 (en) 1987-07-10 1987-07-10 Dry etching method

Country Status (1)

Country Link
JP (1) JP2690900B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007010502A (en) * 2005-06-30 2007-01-18 Sunx Ltd Foreign matter detector
JP2007040972A (en) * 2005-06-30 2007-02-15 Sunx Ltd Foreign material detector
JP2008032654A (en) * 2006-07-31 2008-02-14 Sunx Ltd Foreign material detector
US20130300794A1 (en) * 2012-05-09 2013-11-14 Xerox Corporation System and method for detecting defects in an inkjet printer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587829A (en) * 1981-07-08 1983-01-17 Toshiba Corp Dry etching method
JPS61256726A (en) * 1985-05-10 1986-11-14 Hitachi Ltd Etching method
JPS6214429A (en) * 1985-07-12 1987-01-23 Hitachi Ltd Bias impression etching and device thereof
JPS6258636A (en) * 1985-09-09 1987-03-14 Nippon Telegr & Teleph Corp <Ntt> Dry etching process and device thereof
JPS62154628A (en) * 1985-12-26 1987-07-09 Matsushita Electric Ind Co Ltd Dry etching method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587829A (en) * 1981-07-08 1983-01-17 Toshiba Corp Dry etching method
JPS61256726A (en) * 1985-05-10 1986-11-14 Hitachi Ltd Etching method
JPS6214429A (en) * 1985-07-12 1987-01-23 Hitachi Ltd Bias impression etching and device thereof
JPS6258636A (en) * 1985-09-09 1987-03-14 Nippon Telegr & Teleph Corp <Ntt> Dry etching process and device thereof
JPS62154628A (en) * 1985-12-26 1987-07-09 Matsushita Electric Ind Co Ltd Dry etching method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007010502A (en) * 2005-06-30 2007-01-18 Sunx Ltd Foreign matter detector
JP2007040972A (en) * 2005-06-30 2007-02-15 Sunx Ltd Foreign material detector
JP2008032654A (en) * 2006-07-31 2008-02-14 Sunx Ltd Foreign material detector
US20130300794A1 (en) * 2012-05-09 2013-11-14 Xerox Corporation System and method for detecting defects in an inkjet printer

Also Published As

Publication number Publication date
JP2690900B2 (en) 1997-12-17

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