JPS587829A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS587829A JPS587829A JP10546881A JP10546881A JPS587829A JP S587829 A JPS587829 A JP S587829A JP 10546881 A JP10546881 A JP 10546881A JP 10546881 A JP10546881 A JP 10546881A JP S587829 A JPS587829 A JP S587829A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- polycrystalline
- etched
- plasma
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Abstract
Description
【発明の詳細な説明】
本発明は、隼績晶シリコン、あるいは、ゲート材料であ
る多結晶シリコン、Ｍｏ等の高融点金属及びそのシリサ
イド層の酸化シリコン（８１０２）に対する選択エツチ
ングに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to selective etching of crystalline silicon, polycrystalline silicon as a gate material, high melting point metal such as Mo, and silicon oxide (8102) of its silicide layer.
近年集積回路は微細化の一途をえどり，最近では最小寸
法が１〜２μｍの超ＬＳＩも試作されるに至っている．
この微細加工には、通常平行平板型電極を有する反応容
器に、反応性のガスを導入し被エツチング材料載置の電
極（陰極）に高周波電力（例えば１ ３．５ ６ ＭＨ
ｚ ）を印加することによりグロー放電を発生させ．［
子とイオンの易ａｉのａにより生じる陰極（高周波電力
印加の電極）面上の負電位により、前記グロー放電中の
正イオンを加速して被エツチング物に衝突させ，物理／
化学的な反応を利用し九反応性イオンエッチング法（Ｒ
ｅａｃｔｉｖｅ Ｉｏｎ ＥｔｃｈｉｎｇｒＲＩＢ ）
が用いられテイル。In recent years, integrated circuits have become increasingly miniaturized, and even ultra-LSIs with minimum dimensions of 1 to 2 μm have recently been prototyped.
For this microfabrication, a reactive gas is usually introduced into a reaction vessel having parallel plate electrodes, and a high frequency power (e.g. 1 3.5 6 MH) is applied to the electrode (cathode) on which the material to be etched is placed.
z) to generate a glow discharge. [
The positive ions in the glow discharge are accelerated by the negative potential on the surface of the cathode (electrode to which high-frequency power is applied) caused by the ai of the particles and ions, causing them to collide with the object to be etched.
Nine reactive ion etching methods (R
active Ion EtchingrRIB)
is used for tail.
第１図は、実際にエツチングに用いられる平行平板電極
間
略図を示すものである。同図において、ガス導入口（５
）よシ導入され九エッチングガスは，整合回路（９）を
介して印加されるＩＩｉｌ！ｉＪ１ＩｔＩＬ電力ｄ場に
より放電、解離され、プラズマを形成する。そして、上
記した様に、陰極（１）上には負の直流電圧が発生し、
プラズマ中の正イオンはこの電界により加速されて被エ
ツチング物（３）に衝突し、エツチングを行うものであ
る。一方、陰極ｔｌ）の対向電極（２）は、反応容器（
４）と１体化して陽極を形成し、この陽極上の電位は、
プラズマから見て高々２０〜３Ｑｅｖ程度の降下電圧し
か発生せず、イオン衝撃の効果は、陰極（１）上に比較
してかなシ小さいと考えられる。以上説明し九様に、Ｉ
ＩＬＩＦｌにおいてはプラズマ中の正イオン衝撃による
１方性を積極的に利用しているためにアンダカットなく
、垂直なエツチング壁をもった微細加工が達成されるこ
とに表る。しかしながら塩素（（Ｊｚ）を含むガスによ
る高濃度不純物添加の多結晶８ｊ等のエツチングでは次
の様な問題が生じる。すなわと、第２図（ａ）はレジス
トＩをマスクにして、Ｐ−ドープ多結品別を、例えばＣ
ＢｒＦｖ／Ｃｊ２１スによシエッチングし死時のエツチ
ング形状を示したものであり、 ８１０２αｌと多結
晶８ｉＱｌの界面において、ａ４で示し九様なえぐれが
発生し、さらにオーバエツチングを行うとエツチング壁
は逆テーパ状０にエツチングが進行することが知られて
いる。ＩＢＭのＭｏｇａｂ等によれば、ＣＦ４／Ｃ１２
等の混合ガスによる多結晶ＳＬのエツチングにおいて、
主エツチング橿は、表面に吸着し、イオン衝撃によりエ
ネルギを与えられ九Ｃｌ原子でわると信われており、か
つ、このＣ４とＰ 、 Ａｓ等の不純物を高濃度に添加
した多結晶Ｓ＋の反応性は極めて大きく、従って、下地
５Ｉ０２までエツチングが進行した後、表面に帯伍する
Ｃ１は、表面拡散により多結晶Ｓ！エッヂに遼し、この
部分を選択的にエツチングしていくために、同図（ａ）
−０４に示した様なエグレが発生するものと考えられて
いる。FIG. 1 shows a schematic diagram of parallel plate electrodes actually used for etching. In the same figure, the gas inlet (5
), the etching gas is applied via a matching circuit (9). iJ1ItIL is discharged and dissociated by the power d field to form a plasma. Then, as mentioned above, a negative DC voltage is generated on the cathode (1),
Positive ions in the plasma are accelerated by this electric field and collide with the object to be etched (3) to perform etching. On the other hand, the counter electrode (2) of the cathode tl) is connected to the reaction vessel (
4) to form an anode, and the potential on this anode is
Seen from the plasma, only a voltage drop of about 20 to 3 Qev is generated at most, and the effect of ion bombardment is considered to be much smaller than that on the cathode (1). Having explained the above, I
In ILIFl, the unidirectionality caused by positive ion bombardment in the plasma is actively utilized, so that microfabrication with vertical etched walls without undercuts can be achieved. However, the following problem occurs when etching polycrystalline 8j etc. to which high concentration of impurities is added using gas containing chlorine ((Jz). In other words, in FIG. 2(a), resist I is used as a mask and P- For example, C
This figure shows the etched shape at the time of death after etching with BrFv/Cj21. At the interface of 8102αl and polycrystalline 8iQl, nine different gouges are generated as shown by a4, and when overetching is performed, the etching wall becomes It is known that etching progresses in a reverse tapered shape. According to IBM's Mogab et al., CF4/C12
In etching polycrystalline SL with a mixed gas such as
The main etching rod is believed to be adsorbed on the surface and energized by ion bombardment and destroyed by 9Cl atoms, and is caused by the reaction between C4 and polycrystalline S+ to which impurities such as P and As are added at high concentrations. Therefore, after etching progresses to the base layer 5I02, C1 that is attached to the surface becomes polycrystalline S! due to surface diffusion. In order to selectively etch this part by approaching the edge,
It is thought that an aggravation like that shown in -04 will occur.
（Ｃ、Ｊ 、 Ｍｏｇａｂ他、Ｊ、Ｖａｃ、８ｃｉ、Ｔ
ｅｈｎｏｌ 、１７Ｌ３）、 ７２１（１９８０））ま
た、同図（ｂ）に示した様に、レジストＩと多結晶ｓｔ
＜１邊の間に熱酸化ＰＡａηが挿入されている場合に
は、多結晶８ｉＱ３と前記熱酸化膜αηの界面にもエグ
レａ槌が生じる。これは、多結晶８ｉを酸化した時、Ｐ
のａ度分布がパイ、ルアツブ現 □象により、バル
ブ内に比較して界面付近が高濃度になっているために、
エグレが入りゃすいものと考えられる。(C, J, Mogab et al., J, Vac, 8ci, T
ehnol, 17L3), 721 (1980)) Also, as shown in the same figure (b), resist I and polycrystalline st
When the thermally oxidized PAaη is inserted between <1 edge, an egre a-hammer also occurs at the interface between the polycrystalline 8iQ3 and the thermally oxidized film αη. This is because when polycrystalline 8i is oxidized, P
Due to the a-degree distribution of the pi-ruatsubu phenomenon, the concentration near the interface is higher than that inside the bulb.
It is thought that it is easy for Egret to enter.
以上説明し九二グレは、動作圧力を下げることにより改
善されるが、１方、圧力の低下とともに、前記陰極面上
の直流電圧も大きくなるため、 ８１０２のエツチング
速度も大きくなり、従りて、多結晶Ｓｔ／８ｉ０２比の
低下をまねき、事実上使用できないツカ現状テアル。？
−（Ｄ 様Ｋ ＣＨＦ５ ＋Ｃ１２、ＣＦ４ ＋Ｃ１２
では特真なえぐれが生じ、えぐれを改善しようとして圧
力を下げると選択比が低下するという問題があった。As explained above, the 92 grating can be improved by lowering the operating pressure, but on the other hand, as the pressure decreases, the DC voltage on the cathode surface also increases, so the etching rate of 8102 also increases. , resulting in a decrease in the polycrystalline St/8i02 ratio, making it practically unusable. ?
-(D-sama K CHF5 +C12, CF4 +C12
However, there was a problem in that special gouges occurred, and when the pressure was lowered in an attempt to improve the gouges, the selectivity decreased.
一方、 ＳＰａ ＋ ＣＩ＋ Ａｒ等の不活性ガスを用
いて多結晶Ｓｉのエツチングを行なう方法が最近提案さ
れた（特開昭５５−１１９１７７）、このガスの組み合
わせによシ、高い選択比（＞４０）が得られるが、多結
晶８ｉのエツチング速度は著しく遅く、実用には向かな
い。又、前記４１Ａなえぐれについても何ら言及されて
いない。On the other hand, a method of etching polycrystalline Si using an inert gas such as SPa + CI + Ar has recently been proposed (Japanese Unexamined Patent Publication No. 119177/1983). ), but the etching speed of polycrystalline 8i is extremely slow and is not suitable for practical use. Furthermore, there is no mention of the above-mentioned 41A cutout.
本発明は高速かつ選択性良く、シかもエグレが発生しな
いドライエツチング方法を提供するものであり、陰極表
面を炭素板又は炭化水素系の有機膜で覆い六沸化イオウ
（８Ｆｓ）と塩素（Ｃ／２）の混合ガスのみからガスプ
ラズマを発生させる事によって上記目的が４成される事
を見い出したものである。The present invention provides a dry etching method that is fast, has good selectivity, and does not cause erosion. The cathode surface is covered with a carbon plate or a hydrocarbon-based organic film, and sulfur hexafluoride (8Fs) and chlorine (C It has been discovered that the above objects can be achieved by generating gas plasma only from the mixed gas of /2).
以下、本発明の実施例を図面を参照して説明する。第３
図、第４図は夫々ＳＦ６のみを用いた時のＳＦ４力、及
び圧力に対する単結晶シリコン（ａ）、Ｐ−ドーフ多結
晶シリコン（ｂ） ｓ ５１０２ （Ｃ）のエツチン
グ速度及び多結晶シリコン／ＳｉＯ２比（ｄ）を示すも
のである。ＳＦ６単体の場合、ＳＦ４力の増加とともに
、各材料のエツチング速度は次第に増加するが選択比と
しては逆に小さくなっていく。第３図は０．０５Ｔｏｒ
ｒの条件であり、シリコンのエツチング速度５０００Ｘ
／ｍｉｎで選択比は１０以下である。また、圧力の増加
に対して、多結１別、単結晶８１のエツチング速度はＱ
、Ｑ ５ ’ｒｏｒ ｒ付近で最大値となり、その後一
旦低下した後、急速に上昇しはじめる。こ急上昇の領域
はいわゆるプラズマ二ッ、チング領穢と考えられる。一
方、５ｉ０２のエツチング速度は、圧力の上昇とともに
小さくなシ従って、選択比は圧力の上昇とともに急速に
大きくなる。しかしながら、ｓＦ’６単体の場合には、
いずれの領域においテモオーパエッチングに対して必ず
アンダーカットが生じ実際には使用できないこ石が判明
した。Embodiments of the present invention will be described below with reference to the drawings. Third
Figure 4 shows the SF4 force and pressure when only SF6 is used, and the etching rate and polycrystalline silicon/SiO2 of single crystal silicon (a), P-Dorff polycrystalline silicon (b) and s5102 (C). This shows the ratio (d). In the case of SF6 alone, as the SF4 force increases, the etching rate of each material gradually increases, but the selectivity decreases. Figure 3 shows 0.05 Tor
The conditions are r, and the etching rate of silicon is 5000X.
/min and the selection ratio is 10 or less. In addition, with respect to the increase in pressure, the etching rate of polycrystalline 1 and single crystal 81 is Q
, Q 5 'ror It reaches its maximum value near r, then once decreases, and then begins to increase rapidly. This region of rapid increase is considered to be the so-called plasma pollution region. On the other hand, the etching rate of 5i02 decreases as the pressure increases, so the selectivity increases rapidly as the pressure increases. However, in the case of sF'6 alone,
It was found that undercuts were always caused by Temooper etching in all areas, making the stones unusable.
これに対して、第５図は、ＳＦ６０．０２Ｔｏｒｒに固
定したままｓ ”１２を添加し、エツチング室内の圧力
を０．０５ Ｔｏｒｒ ｙＣ１４整した時のエツチング
特性を示したものである。ＦＬＦＩＥ力は２００Ｗであ
る。第３図、第４図と同様、陰極（１）は炭素（Ｃ）の
薄板（１）で覆っである。これは炭化水素系の有機膜、
例えばポリエステルでも良い。第５図でｓ ｃ１２添加
に対して、Ｓｉ及び引０２のエツチング速度（ａ） （
Ｃ）は次第に減少し続けるのに対して、多結晶Ｓ１のエ
ツチング速Ｗ （ｂ）はＣ１ｈ添加に対して完全に飽和
するという結果が得られた。また、同図よシ明らかな様
に多結ＩＩ＆ｓｔのエツチング速度はｓ ”１２添加に
もかかわらず約３５００１７ｍ１ ｎという直が得られ
。On the other hand, Fig. 5 shows the etching characteristics when s''12 is added while fixing SF60.02 Torr and the pressure in the etching chamber is adjusted to 0.05 Torr yC14.FLFIE force is 200 W. Similar to Figures 3 and 4, the cathode (1) is covered with a carbon (C) thin plate (1).This is a hydrocarbon-based organic film,
For example, polyester may be used. Figure 5 shows the etching rate (a) of Si and 02 with respect to the addition of sc12 (
The results showed that the etching rate W (b) of polycrystalline S1 was completely saturated with the addition of C1h, whereas C) continued to gradually decrease. Further, as is clear from the figure, the etching rate of the polycrystalline II&st was approximately 350017 m1n despite the addition of s''12.
５１０２の選択比は、例えば、圧力比（Ｃ１ｚの分圧／
８Ｆ、の分圧）が２．０の点で４０倍以上という非常
に高い値が得られた。また、圧力比０．２５ 、０．５
。The selection ratio of 5102 is, for example, the pressure ratio (partial pressure of C1z/
At a point of 2.0 (partial pressure of 8F), a very high value of more than 40 times was obtained. Also, the pressure ratio is 0.25, 0.5
.
１．０ 、２．０の各々の点でのＳＭＭ−察結果（第６
図ａは８Ｆ６ノミ、ｂ ハＣ１ｚ／８Ｆｓ Ｏ，２５、
Ｃハ０．５ 以上）から第５図において多結晶Ｓｉのエ
ツチング速度が飽和する領域、すなわち、 Ｃｊ２／Ｓ
Ｐ６圧力比≧０．５では、オーバエツチングに対して、
マスク下のアンダカットは全く入らず、かつ、前記エグ
レも全く発生しないことが解った。SMM-inspection results at each point of 1.0 and 2.0 (6th
Figure a is 8F6 chisel, b is C1z/8Fs O,25,
Cj2/S) to the region where the etching rate of polycrystalline Si is saturated in FIG.
At P6 pressure ratio ≧0.5, against overetching,
It was found that there was no undercut under the mask, and that the aggregation did not occur at all.
なお、圧力比０．２５の時に得られる形状は、マスクの
下にはアンダカットは入らず、逆テーパ状にエツチング
される。以上説明した様に、本発明によれば８Ｐ６ ＋
Ｃ１２のみ、すなわち、不活性ガス等の添加なしにエ
ツチングすることにより８ｉ０２との充分高い選択比が
得られ、かつ、多結晶８７のエツチング速度を肯い値に
保てることができ、さらに、エグレもなく垂直にエツチ
ングされることがら、エツチングのマージンが大巾に広
く取ることができる。以上示した結果の詳細については
、現在充分解明されて鱒ないが、第７図、第８図に示し
た８Ｆ６＋Ｈ２の結果からアンダーカットについては以
下の様な推察が可能と考えられる。第７図は、ＳＦ６に
Ｈ２を添加した場合のエツチング特性であり、Ｈ２の添
加とともに多結晶Ｓｉ、別のエツチング速度（４は次第
に減少し、ついには８１０２のエツチング速度（ｋＩＩ
に等しくなることがわかった。このＨ２の役割は、 ８
Ｆ６から解離し九Ｆｆｉ子の除・去効果にあると考えら
れ（Ｈ＋Ｆ−＋ＨＦ）、多蓋のＨ２を添加した場合には
％ ＳＦＸ＋イオンのみによシエッチングが進行してい
くと考えられる。第８図は、選択エツチングが行なわれ
るＳＦ＠とＨ２の圧力比が０．５の点での■Ｎ観察結果
でＴｏ１７．マスク下のアンダカットを生じながらかつ
、逆テーパ状にエツチングが行われることがわかった。Note that the shape obtained when the pressure ratio is 0.25 has no undercut under the mask, but is etched in a reverse tapered shape. As explained above, according to the present invention, 8P6 +
By etching only C12, that is, without adding an inert gas, a sufficiently high selectivity with respect to 8i02 can be obtained, and the etching rate of polycrystalline 87 can be maintained at a positive value. Since the etching is done vertically, the etching margin can be widened. Although the details of the results shown above have not been fully elucidated at present, it is thought that the following inferences can be made regarding the undercut from the results of 8F6+H2 shown in FIGS. 7 and 8. Figure 7 shows the etching characteristics when H2 is added to SF6. With the addition of H2, polycrystalline Si etching, another etching rate (4) gradually decreases, and finally the etching rate of 8102 (kII
It was found to be equal to The role of this H2 is 8
This is thought to be due to the removal effect of nine Ffi molecules dissociated from F6 (H+F-+HF), and it is thought that when multiple H2 is added, etching progresses only by %SFX+ ions. Figure 8 shows the results of ■N observation at a point where the pressure ratio of SF@ and H2 is 0.5, where selective etching is performed.To17. It was found that etching was performed in a reverse taper shape while creating an undercut under the mask.
これに対して５ａｔＥｅ図に示し九様に、 ８Ｆ、とＣ
１ｚの圧力比０．２５の場合には、マスク下のア／ダカ
ットは入らずに逆テーパ状にエツチングが行われており
、これら２つの結果から、 Ｃ１２の多結晶Ｓｔの−へ
の吸着がマスク下のアンダカットを防止していることが
考えられる（第８図のアンダカットはＦ原子によると考
えられる）。On the other hand, as shown in Figure 5atEe, 8F, and C
When the pressure ratio of 1z is 0.25, the etching is performed in a reverse taper shape without entering the a/da cut under the mask. From these two results, it is possible that the adsorption of C12 polycrystalline St to - It is thought that this prevents undercuts under the mask (the undercuts in FIG. 8 are thought to be caused by F atoms).
以上、不純物がドープされた多結晶７リコンについて述
べたが、単結晶Ｓｉ１高融点金属、及びそのクリサイド
に置き換えても良好にエツチングする事が出来る。Although the polycrystalline 7-licon doped with impurities has been described above, good etching can be achieved even if it is replaced with single crystal Si1 high melting point metal and its crystalide.
プ多多晶Ｓｔをエツチングした時のエグレを説明するた
めの断面図％第３図、第４図は、ＳＦ６単体ガスを用い
た時のＲＦ ＷＩＬ力、圧力に対する多結晶Ｓｉ。
単結晶８ ｉ 、Ｓ ｉ０２のエツチング特性図、第５
図はＳＦ６にＣ１２を添加した時のエツチング特性図、
第６図ｆａ） 、 （ｂ） 、 （Ｃ）はＳＦ６とＣ１
ｚの圧力比を変えた時の断面図、第７図は８Ｆ６にＨ２
を添加した時のエツチング特性図％ｆａＢ図は、ＳＦ６
／Ｉ（２で多留晶Ｓｉをエツチングした時の断面図であ
る。図において、（１）・・・陰極、（１）・・・炭素
板、（２）・・・陽極、（３）・・・被エツチング材断
、（４）・・・反応容！、＋５）・・・ガス導入口、（
６）・・・水冷パイプ、（７）・・・テフロン、（８）
・・・排気系、（９）・・・マツチング回路、ｉｌ・・
・高周波電源、ａｕｍ＠−・・レジＸ ）、α２１．２
１） ｒ２４１２！９ ＃ 、、、多結晶３ｉ、Ｉ・・
・エツチング後の逆ガーパ部ｓ Ｑ４） ［Ｆ４ｔｔｌ
・・エグレ、ｕ！１９ ｒＢ３ ＠ −８ｊ０２、［ｅ
ｆ２ｍ２１・ｊｌｆｊｆａ＋ ｓｔ 。
代理人 弁理士 則 近 憲 佑
（ほか１名）
第１図
ｉ１三
第２図
（久〕
（ｂ）
第３図
ン
票−
Ｖ
日＞〜
ＲＦ電幻（ＩＦ、、）
−１４１，−
第６図
？３
ｍ：）２３
第７図
月ｎ比（〜偽ｌ）
第８図
〜評Figures 3 and 4 are cross-sectional views for explaining the erosion when polycrystalline St is etched. Figures 3 and 4 show polycrystalline Si versus RF WIL force and pressure when using SF6 simple gas. Etching characteristic diagram of single crystal 8i, Si02, 5th
The figure shows the etching characteristics when C12 is added to SF6.
Figure 6 fa), (b) and (C) are SF6 and C1
A cross-sectional view when changing the pressure ratio of z, Figure 7 shows 8F6 and H2
The etching characteristic diagram %faB diagram when SF6 is added is
/I(2) is a cross-sectional view when polycrystalline Si is etched. In the figure, (1)... cathode, (1)... carbon plate, (2)... anode, (3)... ... Cutting of material to be etched, (4) ... Reaction volume!, +5) ... Gas inlet, (
6)...Water cooling pipe, (7)...Teflon, (8)
...Exhaust system, (9)...Matching circuit, IL...
・High frequency power supply, aum@-...Register X), α21.2
1) r2412!9 # , polycrystalline 3i, I...
・Reverse gapper part s after etching Q4) [F4ttl
...Egret, u! 19 rB3 @ -8j02, [e
f2m21・jlfjfa+ st. Agent Patent attorney Kensuke Chika (and 1 other person) Figure 1 I13 Figure 2 (Ku) (b) Figure 3 - V 日>~ RF Dengen (IF,,) -141,- No. Figure 6?3 m:)23 Figure 7 Moon n ratio (~false l) Figure 8 ~ Review
Claims (1)
マを発生させ、高周波電源が接続された側の電極に被エ
ツチング物を置いてエツチングするドライエツチング方
法に於いて、被エツチング物が置かれる陰極表面を炭素
板、又は炭化水素系の有機膜で覆い、六弗化イオウ（Ｓ
Ｆ’６）及び塩素（Ｏｈ）の混合ガスから前記ガスプラ
ズマを発生させるようにし九事を特徴とするドライエツ
チング方法。 （２）被エツチング物として単結晶シリコン、不純物が
導入された多結晶シリコン、尚融点金属、又は高融点金
属の７リサイドを用いる事を特徴とする特許 ング方法。[Scope of Claims] 11) In a dry etching method in which gas plasma is generated by applying high frequency power between parallel plate electrodes, and the object to be etched is placed on the electrode connected to the high frequency power source, the object to be etched is etched. The cathode surface on which the etching material is placed is covered with a carbon plate or a hydrocarbon-based organic film, and sulfur hexafluoride (S
A dry etching method characterized in that the gas plasma is generated from a mixed gas of F'6) and chlorine (Oh). (2) A patented method characterized by using monocrystalline silicon, polycrystalline silicon into which impurities have been introduced, a still melting point metal, or a high melting point metal 7 reside as the object to be etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10546881A JPS587829A (en) | 1981-07-08 | 1981-07-08 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10546881A JPS587829A (en) | 1981-07-08 | 1981-07-08 | Dry etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS587829A true JPS587829A (en) | 1983-01-17 |
| JPH031825B2 JPH031825B2 (en) | 1991-01-11 |
Family
ID=14408408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10546881A Granted JPS587829A (en) | 1981-07-08 | 1981-07-08 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS587829A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6415953A (en) * | 1987-07-10 | 1989-01-19 | Hitachi Ltd | Dry etching method |
| US4981816A (en) * | 1988-10-27 | 1991-01-01 | General Electric Company | MO/TI Contact to silicon |
| US5180466A (en) * | 1984-12-29 | 1993-01-19 | Fujitsu Limited | Process for dry etching a silicon nitride layer |
| WO2004030068A1 (en) * | 2002-09-23 | 2004-04-08 | Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik | Method for the production of an electronic component comprising a praseodymium oxide layer |
| JP4865915B1 (en) * | 2010-10-22 | 2012-02-01 | 泉 菅谷 | Portable magnifying lens with threading function |
| US9130444B2 (en) | 2007-01-18 | 2015-09-08 | Siemens Aktiengesellschaft | Rotary drive with straight primary part segments |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5437580A (en) * | 1977-08-30 | 1979-03-20 | Nec Corp | Dry etching method and target film used for it |
| JPS55119177A (en) * | 1979-02-21 | 1980-09-12 | Ibm | Silicon etching method |
-
1981
- 1981-07-08 JP JP10546881A patent/JPS587829A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5437580A (en) * | 1977-08-30 | 1979-03-20 | Nec Corp | Dry etching method and target film used for it |
| JPS55119177A (en) * | 1979-02-21 | 1980-09-12 | Ibm | Silicon etching method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180466A (en) * | 1984-12-29 | 1993-01-19 | Fujitsu Limited | Process for dry etching a silicon nitride layer |
| JPS6415953A (en) * | 1987-07-10 | 1989-01-19 | Hitachi Ltd | Dry etching method |
| US4981816A (en) * | 1988-10-27 | 1991-01-01 | General Electric Company | MO/TI Contact to silicon |
| WO2004030068A1 (en) * | 2002-09-23 | 2004-04-08 | Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik | Method for the production of an electronic component comprising a praseodymium oxide layer |
| DE10244862B4 (en) * | 2002-09-23 | 2006-09-14 | IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik | Method for producing an electronic component with a praseodymium oxide layer |
| US9130444B2 (en) | 2007-01-18 | 2015-09-08 | Siemens Aktiengesellschaft | Rotary drive with straight primary part segments |
| JP4865915B1 (en) * | 2010-10-22 | 2012-02-01 | 泉 菅谷 | Portable magnifying lens with threading function |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH031825B2 (en) | 1991-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4253907A (en) | Anisotropic plasma etching | |
| US5110408A (en) | Process for etching | |
| JP2734915B2 (en) | Dry etching method for semiconductor | |
| JP2603217B2 (en) | Surface treatment method and surface treatment device | |
| KR100574141B1 (en) | Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system | |
| US6037265A (en) | Etchant gas and a method for etching transistor gates | |
| JP2574094B2 (en) | Etching method | |
| JPH0642470B2 (en) | Method for removing Si etching residue in microstructure device | |
| JPH05308062A (en) | Dry etching method | |
| EP0004285A1 (en) | A method of plasma etching silica at a faster rate than silicon in an article comprising both | |
| JPH03184335A (en) | Apparatus and method for surface cleaning | |
| JPS587829A (en) | Dry etching method | |
| JP3011018B2 (en) | Plasma etching method | |
| JPH08288256A (en) | Trench etching method | |
| JPS6065533A (en) | Dry etching method | |
| US5759922A (en) | Control of etch profiles during extended overetch | |
| JPS6044825B2 (en) | Etching method | |
| JPH0458176B2 (en) | ||
| JPH03109728A (en) | Manufacture of semiconductor device | |
| JPH0817169B2 (en) | Plasma etching method | |
| JP2550368B2 (en) | Magnetic field plasma etching system | |
| JP2734748B2 (en) | Reactive dry etching method | |
| JPH08148468A (en) | Etching method | |
| JPS643840B2 (en) | ||
| JPS62291923A (en) | Apparatus for forming separation groove |