JPS5875832A - 荷電ビ−ム露光装置用の角形アパ−チヤ作成方法 - Google Patents

荷電ビ−ム露光装置用の角形アパ−チヤ作成方法

Info

Publication number
JPS5875832A
JPS5875832A JP56172950A JP17295081A JPS5875832A JP S5875832 A JPS5875832 A JP S5875832A JP 56172950 A JP56172950 A JP 56172950A JP 17295081 A JP17295081 A JP 17295081A JP S5875832 A JPS5875832 A JP S5875832A
Authority
JP
Japan
Prior art keywords
square
aperture
mask
charged beam
beam exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56172950A
Other languages
English (en)
Japanese (ja)
Other versions
JPH041493B2 (cg-RX-API-DMAC7.html
Inventor
Seiichi Yoda
養田　聖一
Hideo Matsumoto
英夫 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56172950A priority Critical patent/JPS5875832A/ja
Publication of JPS5875832A publication Critical patent/JPS5875832A/ja
Publication of JPH041493B2 publication Critical patent/JPH041493B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
JP56172950A 1981-10-30 1981-10-30 荷電ビ−ム露光装置用の角形アパ−チヤ作成方法 Granted JPS5875832A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56172950A JPS5875832A (ja) 1981-10-30 1981-10-30 荷電ビ−ム露光装置用の角形アパ−チヤ作成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56172950A JPS5875832A (ja) 1981-10-30 1981-10-30 荷電ビ−ム露光装置用の角形アパ−チヤ作成方法

Publications (2)

Publication Number Publication Date
JPS5875832A true JPS5875832A (ja) 1983-05-07
JPH041493B2 JPH041493B2 (cg-RX-API-DMAC7.html) 1992-01-13

Family

ID=15951356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56172950A Granted JPS5875832A (ja) 1981-10-30 1981-10-30 荷電ビ−ム露光装置用の角形アパ−チヤ作成方法

Country Status (1)

Country Link
JP (1) JPS5875832A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2367689A (en) * 2000-09-04 2002-04-10 Advantest Corp Device for shaping a beam of charged particles and method for manufacturing the device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS552118U (cg-RX-API-DMAC7.html) * 1978-06-20 1980-01-09
JPS5556628A (en) * 1978-10-23 1980-04-25 Jeol Ltd Electron beam exposure device
JPS5678557U (cg-RX-API-DMAC7.html) * 1979-11-22 1981-06-25
JPS56115532A (en) * 1980-02-07 1981-09-10 Fujitsu Ltd Aperture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS552118U (cg-RX-API-DMAC7.html) * 1978-06-20 1980-01-09
JPS5556628A (en) * 1978-10-23 1980-04-25 Jeol Ltd Electron beam exposure device
JPS5678557U (cg-RX-API-DMAC7.html) * 1979-11-22 1981-06-25
JPS56115532A (en) * 1980-02-07 1981-09-10 Fujitsu Ltd Aperture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2367689A (en) * 2000-09-04 2002-04-10 Advantest Corp Device for shaping a beam of charged particles and method for manufacturing the device

Also Published As

Publication number Publication date
JPH041493B2 (cg-RX-API-DMAC7.html) 1992-01-13

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