JPS5875832A - Forming method for square aperture for charged beam exposure apparatus - Google Patents
Forming method for square aperture for charged beam exposure apparatusInfo
- Publication number
- JPS5875832A JPS5875832A JP17295081A JP17295081A JPS5875832A JP S5875832 A JPS5875832 A JP S5875832A JP 17295081 A JP17295081 A JP 17295081A JP 17295081 A JP17295081 A JP 17295081A JP S5875832 A JPS5875832 A JP S5875832A
- Authority
- JP
- Japan
- Prior art keywords
- square
- aperture
- mask
- charged beam
- beam exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
木兄@は荷電ビーム露光I装置用の角形アパーチ中作属
方法に関する口
近年、半導体集積回路が高集積・高密度と表るに伴ない
、電子ビームiたはイオンビームなどの荷電ビームtレ
ジヌトに照射して、微細パターンを形敗丁ゐことが重要
となった。このような荷電ビームとして、通常は円形の
微小スポットビームを発生させ、高速処1lt−目的と
丁ゐ露光**においては角形の微小スポットビームを発
生させて使用する。[Detailed Description of the Invention] Kinoe @ describes a method for forming square apertures for charged beam exposure equipment.In recent years, as semiconductor integrated circuits have become highly integrated and dense, electron beam or ion It has become important to deform fine patterns by irradiating a charged beam such as a beam onto a resin. As such a charged beam, a circular minute spot beam is usually generated, and a rectangular minute spot beam is generated and used for high-speed processing and first exposure.
後者の場合は、一般に角形アパーチャ13−1個以上使
用してビーム【角形とするが、これKは寸法精度のよい
角形アパーチャを使用丁ゐことが重要である口この工う
々角形アパーチャは高電圧で加速された荷電ビームの照
射を受けたとき、寸法精度を保持する必要がらゐので1
通常は厚み30声諷程度のモリブデン、白金またはタリ
ウムts用するO
このようなアパーチャ材料を加工するには、アルミニウ
ムまたは他の材料をマスクとしてエツチングするが1等
方性エツチングの場合にはマスタの孔が角形であっても
、アパーチャ開口は角に丸味がつき、サイドエツチング
もおきるので(第1a図)、了パーチャが角形にならな
いC第tb図)。In the latter case, one or more square apertures are generally used to make the beam [square], but it is important to use square apertures with good dimensional accuracy. Since it is necessary to maintain dimensional accuracy when irradiated with a charged beam accelerated by voltage,
Typically, a molybdenum, platinum or thallium material with a thickness of about 30 mm is used.To process such aperture materials, aluminum or other materials are used as a mask for etching, but in the case of isotropic etching, the master Even if the hole is square, the aperture opening will have rounded corners and side etching (Figure 1a), so the aperture will not be square (Figure C, tb).
このLうにエツチングが等方性に行なわれる場合は、ウ
ェットエツチング鵞たは反応性ドライエツチングである
。When this etching is performed isotropically, it is wet etching or reactive dry etching.
アルミニウムをモリブデンに対してマスタとして使用し
、エツチングガスCF+15%O,の圧力が0.0 F
5 Toyry、上のときは反応性ドライエツチングと
麿り、上記の理由で角形アパーチャが得られない。ガス
圧が0.002 Torr以下のときは異方性エツチン
グとなるが、厚み30μ馬のアパーチャ材料モリブデン
を加工するには、マスク材料アルミニーラムの厚みも2
0μ票程度必要と々る0このように厚いアル5二りムは
レジストに1って積置の高いパターニングを得ることが
困難である。Aluminum is used as a master for molybdenum, and the pressure of etching gas CF + 15% O is 0.0 F.
5 Toyry, in the above case, it is mixed with reactive dry etching, and a rectangular aperture cannot be obtained for the above reasons. When the gas pressure is 0.002 Torr or less, anisotropic etching occurs, but in order to process molybdenum, the aperture material, with a thickness of 30 μm, the thickness of the mask material, aluminum laminate, must also be 2
It is difficult to obtain patterning with such a thick aluminum strip that has a high degree of deposition when using a resist.
本発明の目的は上記欠点を解消することである。The aim of the invention is to eliminate the above-mentioned drawbacks.
本発明の上記目的は、少なくとも1辺が直線をなすアル
lxウムはくを4枚重合わせて、任意の寸法を有する四
角形の開口をあけたアルミニウムマスクとして、アパー
チャ材料を異方性ドライエツチングすることを特徴とす
る、荷電ビーム露光**用の角形アパーチャ作成方法に
1って達成するととができる。 “
第2a*%?L!!@図を参照して、本発明の方法を例
示する・少々くとも1辺が直線となるように截断した厚
4ISOamのアルしニウムはくを4枚使用して、直線
の辺で囲む四角形の開口を作るように重会わせてマスク
lとしく第2a図)、厚み30μ集のモリブデンの上に
載せ%CHF、+ l 5Isへガス圧0.001 T
orrで、アパーチャの角に丸味のない喬直な異方性エ
ツチングを行なった(llllt2b図)0得たアパー
チャは角形であり(@ 2 c図)、高速処理を目的と
する露光vt電量の角形アパーチャとして、角形の微小
スポットビームな発生させることができた。The above-mentioned object of the present invention is to anisotropically dry-etch an aperture material by stacking four aluminum foils each having at least one straight side to form an aluminum mask with a rectangular opening having arbitrary dimensions. This can be achieved by a method of creating a rectangular aperture for charged beam exposure**, which is characterized by the following. “The method of the present invention will be illustrated with reference to Figure 2a*%?L!!@ ・Using four sheets of aluminum foil with a thickness of 4 ISOam, cut so that at least one side is a straight line. Then, overlap them to form a rectangular opening surrounded by straight sides to form a mask L (Fig. 2a), place it on a 30μ thick molybdenum film, and apply a gas pressure of 0.001T to %CHF, +15Is.
Anisotropic etching was performed on the corners of the aperture with no roundness (Fig. 2b). As an aperture, we were able to generate a small rectangular spot beam.
第1aIQは等方性エツチングにおけるマスクとアパー
チャとの断面図であり、
glib図は第1&図の一一石線平面図であり、第2a
図は本発明において使用するマスクとアパーチャとの断
面図であり、
第2b図は第2a図のnb−IIb 線断面図であり、
第2c図は第2b図の■。−実線平面図であるロト・・
・・・マスク、2・−・・・アパーチャ。
第1Q図
第1b図1aIQ is a cross-sectional view of the mask and aperture in isotropic etching, the glib diagram is a plan view of the 1st & 1st line, and 2a
The figure is a sectional view of the mask and aperture used in the present invention, and FIG. 2b is a sectional view taken along the line nb-IIb of FIG. 2a.
Figure 2c is ■ in Figure 2b. - Roto, which is a solid plan view.
...Mask, 2...Aperture. Figure 1Q Figure 1b
Claims (1)
4枚重合わせて、任意の寸法tVする四角形の開口tあ
けたアルミニウムマスタとして、アパーチャ材料を異方
性ドライエツチングすることt9I黴と丁ゐ、荷電ビー
ム露光wit用の角形アパーチャ作成方法。1. Aluminum with at least one side being a straight line t is <t-
A method for creating a rectangular aperture for charged beam exposure by overlapping four sheets and anisotropically dry etching the aperture material using an aluminum master with a rectangular opening of an arbitrary dimension tV.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17295081A JPS5875832A (en) | 1981-10-30 | 1981-10-30 | Forming method for square aperture for charged beam exposure apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17295081A JPS5875832A (en) | 1981-10-30 | 1981-10-30 | Forming method for square aperture for charged beam exposure apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5875832A true JPS5875832A (en) | 1983-05-07 |
JPH041493B2 JPH041493B2 (en) | 1992-01-13 |
Family
ID=15951356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17295081A Granted JPS5875832A (en) | 1981-10-30 | 1981-10-30 | Forming method for square aperture for charged beam exposure apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5875832A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2367689A (en) * | 2000-09-04 | 2002-04-10 | Advantest Corp | Device for shaping a beam of charged particles and method for manufacturing the device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS552118U (en) * | 1978-06-20 | 1980-01-09 | ||
JPS5556628A (en) * | 1978-10-23 | 1980-04-25 | Jeol Ltd | Electron beam exposure device |
JPS5678557U (en) * | 1979-11-22 | 1981-06-25 | ||
JPS56115532A (en) * | 1980-02-07 | 1981-09-10 | Fujitsu Ltd | Aperture |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51112219A (en) * | 1975-03-28 | 1976-10-04 | Hitachi Ltd | Circuit test equipment |
-
1981
- 1981-10-30 JP JP17295081A patent/JPS5875832A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS552118U (en) * | 1978-06-20 | 1980-01-09 | ||
JPS5556628A (en) * | 1978-10-23 | 1980-04-25 | Jeol Ltd | Electron beam exposure device |
JPS5678557U (en) * | 1979-11-22 | 1981-06-25 | ||
JPS56115532A (en) * | 1980-02-07 | 1981-09-10 | Fujitsu Ltd | Aperture |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2367689A (en) * | 2000-09-04 | 2002-04-10 | Advantest Corp | Device for shaping a beam of charged particles and method for manufacturing the device |
Also Published As
Publication number | Publication date |
---|---|
JPH041493B2 (en) | 1992-01-13 |
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